Page 1
SKiiP 10NAB12T4V1
MiniSKiiP® 1
SKiiP 10NAB12T4V1
Features
•Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Remarks
•V
• Case temp. limited to T
• product rel. results valid for Tj≤150
, VF= chip level value
CEsat
(for baseplateless modules T
= 125°C max.
C
C
(recomm. Top = -40 ... +150°C)
= TS)
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1200 V
6A
6A
6A
6A
4A
12 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Chopper - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1200 V
6A
6A
6A
6A
4A
12 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
FRM
Fnom
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1200 V
7.5 A
7.5 A
7.5 A
7.5 A
4A
12 A
36 A
-40 ... 175 °C
Freewheeling - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
FRM
Fnom
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1200 V
7.5 A
7.5 A
7.5 A
7.5 A
4A
12 A
36 A
-40 ... 175 °C
NAB
© by SEMIKRON Rev. 3 – 02.12.2011 1
Page 2
SKiiP 10NAB12T4V1
MiniSKiiP® 1
SKiiP 10NAB12T4V1
Features
•Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Remarks
•V
• Case temp. limited to T
• product rel. results valid for Tj≤150
, VF= chip level value
CEsat
(for baseplateless modules T
= 125°C max.
C
C
(recomm. Top = -40 ... +150°C)
= TS)
Absolute Maximum Ratings
Symbol Conditions Values Unit
Rectifier - Diode
V
I
F
I
Fnom
I
FSM
2
I
T
RRM
t
j
Tj=25°C
Ts=25°C, Tj=150°C
10 ms
sin 180°
10 ms
sin 180°
T
T
T
T
=25°C
j
=150°C
j
=25°C
j
=150°C
j
1600 V
39 A
8A
220 A
200 A
242 A
200 A
2
2
-40 ... 150 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20A per spring
terminal
20 A
-40 ... 125 °C
AC sinus 50Hz, 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=4A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCEV, IC=1mA
VGE=0V
V
CE=VCES
V
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 23 nC
Tj=25°C
VCC= 600 V
I
=4A
C
R
=150
G on
R
= 150
G off
V
= +15/-15 V
GE
per IGBT 2.49 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
263 300 m
388 413 m
55.86.5V
0.1 0.3 mA
mA
0.25 nF
0.03 nF
0.01 nF
0.00
65 ns
45 ns
0.66 mJ
300 ns
110 ns
0.37 mJ
Chopper - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
Q
R
Gint
IC=4A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCEV, IC=1mA
VGE=0V
V
= 1200 V
CE
G
- 8 V...+ 15 V 23 nC
Tj=25°C
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
263 300 m
388 413 m
55.86.5V
0.1 0.3 mA
mA
0.00
s
s
NAB
2 Rev. 3 – 02.12.2011 © by SEMIKRON
Page 3
SKiiP 10NAB12T4V1
MiniSKiiP® 1
SKiiP 10NAB12T4V1
Features
•Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Remarks
•V
• Case temp. limited to T
• product rel. results valid for Tj≤150
, VF= chip level value
CEsat
(for baseplateless modules T
= 125°C max.
C
C
(recomm. Top = -40 ... +150°C)
= TS)
Characteristics
Symbol Conditions min. typ. max. Unit
Chopper - IGBT
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-s)
VCC= 600 V
I
=4A
C
R
=150
G on
R
= 150
G off
= +15/-15 V
V
GE
per IGBT 2.49 K/W
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
65 ns
45 ns
0.66 mJ
300 ns
110 ns
0.37 mJ
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF=4A
EC
V
=0V
GE
chiplevel
IF=4A
di/dt
=110A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode 2.53 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
1.8 2.1 V
1.6 1.9 V
1.3 1.5 V
0.9 1.1 V
129 144 m
181 198 m
3.4 A
0.95 µC
0.34 mJ
Freewheeling - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF=4A
EC
V
=0V
GE
chiplevel
IF=4A
di/dt
=110A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode 2.53 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
1.8 2.1 V
1.6 1.9 V
1.3 1.5 V
0.9 1.1 V
129 144 m
181 198 m
3.4 A
0.95 µC
0.34 mJ
Rectifier - Diode
V
V
r
R
F
F0
F
th(j-s)
= V
IF=8A
EC
V
=0V
GE
chiplevel
per Diode 1.5 K/W
T
=25°C
j
=125°C
T
j
Tj=25°C
T
=125°C
j
Tj=25°C
T
=125°C
j
11.21V
1.1 V
1.0 V
0.8 V
15 29 m
34 m
Module
M
s
to heat sink 2 2.5 Nm
w35g
Temperatur Sensor
R
100
R(T)
Tr=100°C, tolerance=3%
R(T)=1000[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10
-5°C-2
2
1670 ±
3%
NAB
© by SEMIKRON Rev. 3 – 02.12.2011 3
Page 4
SKiiP 10NAB12T4V1
Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
4 Rev. 3 – 02.12.2011 © by SEMIKRON
Page 5
SKiiP 10NAB12T4V1
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic
© by SEMIKRON Rev. 3 – 02.12.2011 5
Page 6
SKiiP 10NAB12T4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
6 Rev. 3 – 02.12.2011 © by SEMIKRON
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