Datasheet SK204 Datasheet (Polyfet)

polyfet rf devices

SK204

10

Push - Pull

AK

24.0

2.4

40.0

1.60

C/W

65

1.2

5.60

0.8

40

1.00

2.00

5.1

90

0.08

70

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency

Total
Device
Dissipation

Junction to
Case Thermal
Resistance

Maximum
Junction
Temperature

Storage
Temperature

DC Drain
Current

Drain to
Source
Voltage

Gate to
Source
Voltage

-65 C to 150 C200 C A V

Load Mismatch ToleranceVSWR

Drain to
Gate
Voltage

20:1 Relative

0.80

40.00Ids = mA, Vgs = 0V
V, Vgs = 0V

Ciss
Crss
Coss

Vds =

Idq = A, Vds = V, F =

0.80

Bvdss

Idss

Drain Breakdown Voltage

V

mA

pF

pF

pF

Common Source Output Capacitance

Common Source Feedback Capacitance

Idq =
Idq = 0.80

1,000

Vgs = 20V, Ids = Rdson Saturation Resistance

Forward TransconductancegM Vds = 10V, Vgs = 5V

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

1,000
1,000

Common Source Input Capacitance

70 V

Igss
Vgs

Idsat

Zero Bias Drain Current

Gate Leakage Current
Gate Bias for Drain Current

Saturation Current

1 7

uA

V

Mho

Ohm

Amp

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

RF CHARACTERISTICS (

25.0

ABSOLUTE MAXIMUM RATINGS ( T =

Gps

28.0

A, Vds = V, F =

A, Vds = V, F =

28.0

28.0

Watts V

1

MHz

MHz

MHz

Watts

Package Style

25.0

Vds = 0V Vgs = 30V

Vgs = 20V, Vds = 10V

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

General Description

28.0

Vds =

A, Vgs = VdsIds =

A

η

dB

%

o

o

oo

o

Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.

TM

t

SILICON GATE ENHANCEMENT MODE

RF POWER TRANSISTORVDMOS

Vgs = 0V, F = 1 MHz28.0

Vds =

Vgs = 0V, F = 1 MHz28.0

Vds =

Vgs = 0V, F = 1 MHz28.0

REVISION 03/28/2001

20

25 C )

WATTS OUTPUT )

S2A 4 DIE ID & GM Vs VG

0.10

1.00

10.00

0 2 4 6 8 10 12 14

Vgs in Volts

Id in amps; Gm in mhos

Id

gM

S2A 4 DICE CAPACITANCE

1

10

100

0 5 10 15 20 25 30

VDS IN VOLTS

Coss

Ciss

Crss

SK204 POUT VS PIN Freq=1000MHz, VDS=28V, Idq=.8A

0

5

10

15

20

25

30

35

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

PIN IN WATTS

7.00

8.00

9.00

10.00

11.00

12.00

13.00

Pout

Efficiency = 38%

POLYFET RF DEVICES

POUT VS PIN GRAPH

CAPACITANCE VS VOLTAGE

ID & GM VS VGSIV CURVE

Zin Zout PACKAGE DIMENSIONS IN INCHES

SK204

S2A 4 DIE IV

0

1

2

3

4

5

6

0 2 4 6 8 10 12 14 16 18 20

VDS IN VOLTS

ID IN AMPS

vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 03/28/2001

Tolerance .XX +/-0.01 .XXX +/-.005 inches