Datasheet SIR428DP Datasheet (Mosfet)

New Product

N-Channel 30-V (D-S) MOSFET

SiR428DP

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

0.0075 at V

0.0095 at V

DS(on)

(Ω)

GS

GS

= 10 V

= 4.5 V

a, g

g

g

Qg (Typ.)

9.5 nC

I

(A)

D

30

30

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• 100 % UIS Tested

PowerPAK® SO-8

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

6.15 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: SIR428DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

5.15 mm

S

2

S

3

G

4

• Synchronous Rectification

•VRM

• Server

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

T

C

= 70 °C

T

C

TA = 25 °C
TA = 70 °C

T

= 25 °C

C

TA = 25 °C

L = 0.1 mH

= 25 °C

T

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

30

± 20

g

30

g

30

b, c

17.4

b, c

13.8
60

g

30

b, c

3.7
20

20

22.7

14.5

b, c

4.1

b, c

2.6

- 55 to 150
260

V

A

mJ

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s

Maximum Junction-to-Case (Drain) Steady State

Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Package limited.

Document Number: 64987
S09-1093-Rev. A, 15-Jun-09

R

thJA

R

thJC

22 30

4.5 5.5

°C/W

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1

New Product

SiR428DP

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

V

DS

= 30 V, V

DS

= 30 V, V

GS

≥ 5 V, V

DS

V

= 10 V, ID = 10 A

GS

V

= 4.5 V, ID = 10 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 10 V, ID = 10 A

VDS = 15 V, V

VDS = 15 V, V

= 15 V, V

V

DS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 10 A

GS

= 4.5 V, ID = 10 A

GS

f = 1 MHz 0.2 0.5 1.0 Ω

V

= 15 V, RL = 1.5 Ω

DD

I

≅ 10 A, V

D

≅ 10 A, V

I

D

V

= 10 V, Rg = 1 Ω

GEN

= 10 V, RL = 1 Ω

DD

= 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 3 A

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

30 V

27

- 4.4

mV/°C

1.2 2.5 V

± 100 nA

1

10

30 A

0.0061 0.0075

0.0077 0.0095

46 S

1117

274

80

21 32

9.5 14.5

2.8

2.8

816

10 20

17 34

816

16 32

11 22

18 36

918

30

60

0.75 1.1 V

22 40 ns

15.5 28 nC

14

8

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

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Document Number: 64987

S09-1093-Rev. A, 15-Jun-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiR428DP

Vishay Siliconix

60

VGS=10V thru 4 V

48

36

24

- Drain Current (A)I

D

12

0

0.0 0.5 1.0 1.5 2.0 2.5

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.010

0.009

W)

0.008

VGS=4.5V

VGS=3V

10

8

6

4

- Drain Current (A)I

D

2

0

TC= 125 °C

TC=25 °C

TC=--55 °C

012345

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

1500

C

1200

900

iss

0.007

- On-Resistance (R

DS(on)

0.006

0.005
0 12243648 60

ID- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

10

ID=10A

8

VDS=10V

6

VDS=15V

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0.0 4.4 8.8 13.2 17.6 22.0

Qg- Total Gate Charge (nC)

VDS=20V

Gate Charge

VGS=10V

600

C

C - Capacitance (pF)

300

C

rss

0

0 6 12 18 24 30

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

1.7

ID=10A

1.5

VGS=10V

1.3

- On-Resistance

(Normalized)

1.1

DS(on)

R

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

VGS=4.5V

On-Resistance vs. Junction Temperature

Document Number: 64987
S09-1093-Rev. A, 15-Jun-09

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New Product

SiR428DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

TJ= 150 °C

10

1

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD-Source-to-Drain Voltage (V)

TJ= 25 °C

Source-Drain Diode Forward Voltage

0.5

0.2

- 0.1

Variance (V)V

- 0 . 4

GS(th)

ID=5 mA

ID= 250 µA

0.030

ID = 10 A

0.024

0.018

0.012

- On-Resistance (Ω)

DS(on)

R

0.006

0.000
012345678 910

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

200

160

120

Power (W)

80

- 0 . 7

- 1 . 0

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

0.01

0.01

* V

Safe Operating Area, Junction-to-Ambient

*

DS(on)

TA= 25 °C

Single Pulse

0.1 1 10

- Drain-to-Source Voltage (V)

V

DS

> minimum VGSat which R

GS

40

0

BVDSS Limited

is specified

DS(on)

0.1

Time (s)

Single Pulse Power, Junction-to-Ambient

1ms

10 ms

100 ms

1s

10 s
DC

100

011100.00.01

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Document Number: 64987

S09-1093-Rev. A, 15-Jun-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

45

36

Package Limited

27

18

- Drain Current (A)

D

I

9

0

0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Current Derating*

SiR428DP

Vishay Siliconix

28.0

22.4

16.8

Power (W)

11.2

5.6

0.0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Power, Junction-to-Case

* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

2.5

2.0

1.5

Power (W)

1.0

0.5

0.0
0 25 50 75 100 125 150

TA - Ambient Temperature (°C)

Power, Junction-to-Ambient

limit.

Document Number: 64987
S09-1093-Rev. A, 15-Jun-09

www.vishay.com

5

New Product

SiR428DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01

-4

10

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

0.1

0.05

0.02

Single Pulse

Notes:

P

DM

t

1

t

2

t

100

thJA

1

t

2

(t)

= 70 °C/W

100010

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

Single Pulse

-3

10

-2

10

-1

1

JM-TA=PDMZthJA

4. Surface Mounted

10

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.01

-4

10

-3

10

-2

10

-1

01110

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64987

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.

Document Number: 64987

S09-1093-Rev. A, 15-Jun-09

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Disclaimer

All product specifications and data are subject to change without notice.

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