
SIR-34ST3F
Sensors
Infrared light emitting diode, top view type
SIR-34ST3F
The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 950nm spectrum suit able for silicon detec tors. It is small and at the same time has a wide radiation a ngle,
marking it ideal for compact optical control equipment.
zApplications
Optical control equipmen t
Light source for remote control devi ces
zFeatures
1) Compact (φ3.1mm).
2) High efficiency, high output P
O=8.0mW (IF=50mA).
3) Wide radiation angle θ=27°.
4) Emission spectrum well suited to silicon detectors
(λ
P=950nm).
5) Good current-optical output linearity.
6) Long life, high reliability .
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
I
F
V
P
I
FP
Topr
Tstg
R
D
∗
Rev.B 1/3
zDimensions (Unit : mm)
4−0.6
2− 0.5
Limits
100
5
160
0.5
−25 to +85
−40 to +85
Unit
mA
mW
°C
°C
V
A
φ3.8±0.3
1
φ3.5
(2.5)
φ3.1±0.2
1.1
Max.1
2.5±1
2
Notes:
1. Unspecified tolerance
shall be ±0.2.
2. Dimension in parenthesis are
show for reference.
5.2±0.3
Min.24
1
Anode
2
Cathode

SIR-34ST3F
Sensors
zElectrical and optical characteristics (Ta = 25°C)
Parameter
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Pesponse time
Cut-off frequency
Symbol
O
P
I
E
V
F
I
R
P
λ
∆λ
θ
1 / 2
tr·tf
f
C
zElectrical and optical characteristic curves
100
50
80
(mA)
F
60
40
(mA)
F
40
30
20
Min.
−
3.5
−
−
−
−
−
−
−
Typ.
8.0
−
1.3
−
950
40
±27
1.0
1.0
Max.
−
17.6
1.6
10
−
−
−
−
−
−25°C
0°C
25°C
50°C
75°C
Unit
mW
mW/sr
V
µA
nm
nm
deg
µs
MHz
I
F
=50mA
F
=50mA
I
F
=100mA
I
V
R
=3V
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
I
F
=50mA
100
(%)
O
80
60
40
Conditions
20
FORWARD CURRENT : I
0
0 20406080100
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Forward current falloff
10
FORWARD CURRENT : I
0
012
FORWARD VOLTAGE : V
Fig.2 Forward current vs. forward voltage
F
(V)
20
RELATIVE OPTICAL OUTPUT : P
0
900 920 940 960 980 1000
OPTICAL WAVELENGTH : λ (nm)
Fig.3 Wavelength
50
(%)
E
40
(mW/sr)
E
30
20
10
EMITTING STRENGTH : I
0
200 406080100
FORWARD CURRENT : I
Fig.4 Emitting strength vs.
forward current
F
(mA)
200
100
50
20
RELATIVE EMITTING STRENGTH : I
10
0−20 20 8040 60
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Relative emitting strength
vs.ambient temperature
Rev.B 2/3

SIR-34ST3F
Sensors
70°
60°
50°
40°
30°
20°
10°
0°
100
80
60
40
(%)
90°
80°
0100 80 60 40 20
10°
20° 30° 40° 50° 60° 70° 80° 90°
ANGULAR DISPLACEMENT : θ (deg)RELATIVE EMITTING STRENGTH (%)
Fig.6 Directional pattern
20
RELATIVE EMITTING STRENGTH
Rev.B 3/3

Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
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Appendix1-Rev2.0