Datasheet SiHP18N50C DataSheet (Vishay)

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Power MOSFET

SiHP18N50C

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) at TJ max. 560

R

()V

DS(on)

Q

(Max.) (nC) 76

g

Q

(nC) 21

gs

Q

(nC) 29

gd

Configuration Single

= 10 V 0.225

GS

FEATURES

• Low Figure-of-Merit Ron x Q

• 100 % Avalanche Tested

• High Peak Current Capability

• dV/dt Ruggedness

• Improved t

• Improved Gate Charge

rr/Qrr

g

• High Power Dissipations Capability

• Compliant to RoHS Directive 2002/95/EC

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free SiHP18N50C-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current (T

Pulsed Drain Current

b

= 150 °C)

J

a

VGS at 10 V

C

= 100 °C 11

C

DS

± 30

GS

I

D

IDM 72

Linear Derating Factor TO-220AB 1.8 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation TO-220AB P

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

c

d

d

for 10 s 300

E

AS

D

dV/dt 5 V/ns

, T

J

stg

Notes

a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V

= 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 17 A.

DD

d. I

 18 A, dI/dt  380 A/μs, VDD  VDS, TJ  150 °C.

SD

e. 1.6 mm from case.

500

18

361 mJ

223 W

- 55 to + 150

V

AT

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91374 www.vishay.com
S11-0520-Rev. D, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

SiHP18N50C

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient TO-220 R

Maximum Junction-to-Case (Drain) TO-220 R

thJA

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C

DS

Gate-Source Threshold Voltage (N) V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance

a

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 10 A - 0.225 0.270 

DS(on)

g

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Internal Gate Resistance R

Total Gate Charge Q

iss

- 300 360

oss

-2632

rss

f = 1.0 MHz, open drain - 1.1 - 

g

g

V

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

-29-

gd

d(on)

r

-32-

d(off)

-44-

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current I

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

S

SM

SD

rr

rr

RRM

MOSFET symbol
showing the
integral reverse
p - n junction diode

Note

a. Repetitive rating; pulse width limited by maximum junction temperature.

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 10 A - 6.4 - S

VGS = 0 V,

= 25 V,

V

DS

f = 1.0 MHz

= 10 V ID = 18 A, VDS = 400 V

GS

V

= 250 V, ID = 18 A

DD

R

= 7.5 , V

g

TJ = 25 °C, IS = 18 A, VGS = 0 V - - 1.5 V

TJ = 25 °C, IF = IS,

dI/dt = 100 A/μs, V

-62

-0.56

- 2451 2942

-6576

-80-

-27-

= 10 V

GS

D

G

S

--18

--72

- 503 - ns

= 35 V

R

-6.7-μC

-30-A

°C/W

μA

pFOutput Capacitance C

nC Gate-Source Charge Qgs -21-

ns

A

The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.

www.vishay.com Document Number: 91374
2 S11-0520-Rev. D, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

0

10

20

30

40

50

60

70

0612 18

24

30

7.0 V

Bottom

To p

V

GS

15 V
14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

TJ = 25 °C

0

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

0.01

0.1

1

10

100

5678910

TJ= 150 °C

T

J

= 25 °C

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

0

0.5

1

1.5

2

2.5

3

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

ID = 17 A

V

GS

= 10 V

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiHP18N50C

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 150 °C

, Drain Current (A)

D

I

40

30

20

10

0 6 12 18 24 30

To p

Bottom

V

GS

15 V
14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

TJ = 150 °C

7.0 V

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91374 www.vishay.com
S11-0520-Rev. D, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

SiHP18N50C

Capacitance (pF)

V

DS

,

Drain-to-Source Voltage (V)

10

10

2

10

3

10

4

10

5

1101001000

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

C

iss

C

rss

C

oss

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

0

4

8

12

16

20

0306090120

ID = 17 A

V

DS

= 250 V

V

DS

= 100 V

V

DS

= 400 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

Operation in this area limited

by R

DS(on)

1 ms

10 ms

100 µs

10

3

1

10

10

2

10

10

2

10

3

10

4

0.1

Vishay Siliconix

100

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

TJ = 150 °C

10

= 25 °C

T

J

1

, Reverse Drain Current (A)

SD

I

0.1

V

= 0 V

GS

0.2 0.5 0.8 1.1 1.4

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

www.vishay.com Document Number: 91374
4 S11-0520-Rev. D, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

20

15

10

, Drain Current (A)

D

5

I

0

25 50 75 100 125 150

Fig. 9 - Maximum Drain Current vs. Case Temperature

This datasheet is subject to change without notice.

Fig. 8 - Maximum Safe Operating Area

TC, Case Temperature (°C)

www.vishay.com/doc?91000

10

-4

10

-3

10

-2

0.1 1

Normalized Effective Transient

Thermal Impedance

0.01

0.1

1

Pulse Time (s)

Single Pulse

0.02

0.05

0.1

0.2

Duty Cycle = 0.5

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

R

G

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

10 V

Var y tp to obtain
required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case

SiHP18N50C

Vishay Siliconix

Fig. 11a - Switching Time Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

Q

10 V

V

Q

GS

G

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform

Fig. 11b - Switching Time Waveforms

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

Document Number: 91374 www.vishay.com
S11-0520-Rev. D, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 13b - Gate Charge Test Circuit

This datasheet is subject to change without notice.

0.3 µF

D.U.T.

3 mA

I

G

Current sampling resistors

I

D

www.vishay.com/doc?91000

+

V

DS

-

SiHP18N50C

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

Vishay Siliconix

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91374

.

www.vishay.com Document Number: 91374
6 S11-0520-Rev. D, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

TO-220 FULLPAK (HIGH VOLTAGE)

E

n

d1

Ø P

Package Information

Vishay Siliconix

A

A1

d3

D

u

L1

L

b3

b2

b

e

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.570 4.830 0.180 0.190
A1 2.570 2.830 0.101 0.111
A2 2.510 2.850 0.099 0.112

b 0.622 0.890 0.024 0.035
b2 1.229 1.400 0.048 0.055
b3 1.229 1.400 0.048 0.055

c 0.440 0.629 0.017 0.025

D 8.650 9.800 0.341 0.386
d1 15.88 16.120 0.622 0.635
d3 12.300 12.920 0.484 0.509

E 10.360 10.630 0.408 0.419

e 2.54 BSC 0.100 BSC
L 13.200 13.730 0.520 0.541

L1 3.100 3.500 0.122 0.138

n 6.050 6.150 0.238 0.242

Ø P 3.050 3.450 0.120 0.136

u 2.400 2.500 0.094 0.098
v 0.400 0.500 0.016 0.020

ECN: X09-0126-Rev. B, 26-Oct-09
DWG: 5972

Notes

1. To be used only for process drawing.

2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads.

3. All critical dimensions should C meet C

4. All dimensions include burrs and plating thickness.

5. No chipping or package damage.

Document Number: 91359 www.vishay.com
Revision: 26-Oct-09 1

> 1.33.

pk

c

V

A2

Legal Disclaimer Notice

www.vishay.com

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Disclaimer



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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 13-Jun-16

1

Document Number: 91000