Datasheet IRLZ44S, SiHLZ44S DataSheet (Vishay)

Power MOSFET

IRLZ44S, SiHLZ44S

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 60

()V

R

DS(on)

Q

(Max.) (nC) 66

g

Q

(nC) 12

gs

Q

(nC) 43

gd

Configuration Single

= 5.0 V 0.028

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Logic-Level Gate Drive

•R

• 175 °C Operating Temperature

•Fast Switching

Specified at VGS = 4 V and 5 V

DS(on)

• Compliant to RoHS Directive 2002/95/EC

D

D2PAK (TO-263)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and

G

cost-effectiveness.

2

The D

PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest

D

G

S

N-Channel MOSFET

S

possible on-resistance in any existing surface mount
package. The D

2

PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHLZ44S-GE3 SiHLZ44STRR-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRLZ44SPbF IRLZ44STRRPbF
SiHLZ44S-E3 SiHLZ44STR-E3

a

a

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current

a

f

VGS at 5.0 V

T

= 25 °C

C

= 100 °C 36

T

C

DS

± 10

GS

I

D

IDM 200
Linear Derating Factor 1.0
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25 , IAS = 51 A (see fig. 12).

b. V

DD

 51 A, dI/dt  250 A/μs, VDD  VDS, TJ  175 °C.

c. I

SD

d. 1.6 mm from case.

e

b

= 25 °C

e

c

d

C

TA = 25 °C 3.7

for 10 s 300

E

AS

P

D

dV/dt 4.5 V/ns

, T

J

stg

e. When mounted on 1" square PCB (FR-4 or G-10 material).
f. Current limited by the package, (die current = 51 A).

60

50

0.025
400 mJ
150

- 55 to + 175

d

V

A

W/°C

W

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91329

www.vishay.com

S11-1055-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRLZ44S, SiHLZ44S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.070 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Current limited by the package, (Die Current = 51 A).

www.vishay.com Document Number: 91329
2 S11-1055-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DS

GS(th)

V

GSS

DSS

DS(on)

fs

iss

- 1200 -

oss

- 200 -

rss

g

--12

gs

--43

gd

d(on)

r

-42-

d(off)

- 110 -

f

D

V

V

GS

V

GS

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs

This document is subject to change without notice.

-62

-40

°C/W

-1.0

VGS = 0, ID = 250 μA 60 - - V

VDS = VGS, ID = 250 μA 1.0 - 2.0 V

= ± 10 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

DS

= 5.0 V ID = 31 A

= 4.0 V ID = 25 A

VDS = 25 V, ID = 31 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

b

- - 0.028

- - 0.039

23 - - S

- 3300 -

--66

= 51 A, VDS = 48 V,

I

= 5.0 V

D

see fig. 6 and 13

b

-17-

V

= 30 V, ID = 51 A,

DD

= 4.6 , RD = 0.56 , see fig. 10

g

G

G

TJ = 25 °C, IS = 51 A, VGS = 0 V

b

D

S

D

S

b

- 230 -

-4.5-

-7.5-

--50

- - 200

--2.5V

- 130 180 ns

b

c

- 0.84 1.3 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

www.vishay.com/doc?91000

μA



pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRLZ44S, SiHLZ44S

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91329 www.vishay.com
S11-1055-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRLZ44S, SiHLZ44S

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91329
4 S11-1055-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

IRLZ44S, SiHLZ44S

Vishay Siliconix

R

D.U.T.

D

+

V

-

DD

V

DS

V

GS

R

g

5 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10b - Switching Time Waveforms

Document Number: 91329 www.vishay.com
S11-1055-Rev. C, 30-May-11 5

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRLZ44S, SiHLZ44S

R

g

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

5 V

Var y t

p

to obtain

required I

AS

Q

GS

Q

GD

Q

G

V

G

Charge

5 V

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

V

DS

t

p

V

DS

I

AS

V

DD

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91329
6 S11-1055-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

Peak Diode Recovery dV/dt Test Circuit

IRLZ44S, SiHLZ44S

Vishay Siliconix

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

-

D =

g

Period

P.W.

+

+

V

DD

-

V

= 10 Va

GS

D.U.T. l

Reverse
recovery
current

D.U.T. V

Re-applied
voltage

Inductor current

Note

a. V

waveform

SD

Body diode forward

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

current

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91329

.

Document Number: 91329 www.vishay.com
S11-1055-Rev. C, 30-May-11 7

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420

(10.668)

0.635
(16.129)

0.355

AN826

Vishay Siliconix

(9.017)

Return to Index

0.135

(3.429)

0.200

(5.080)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.257)

0.145

(3.683)

Document Number: 73397
11-Apr-05

www.vishay.com

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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

1

Document Number: 91000