Datasheet IRLR014, IRLU014, SiHLR014, SiHLU014 DataSheet (Vishay)

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DPAK

(TO-252)

IPAK

(TO-251)

G

D

S

S

D

G

D

IRLR014, IRLU014, SiHLR014, SiHLU014

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 60

R

()V

DS(on)

Q

(Max.) (nC) 8.4

g

Q

(nC) 3.5

gs

Q

(nC) 6.0

gd

Configuration Single

= 5.0 V 0.20

GS

FEATURES

• Dynamic dV/dt Rating

• Surface Mount (IRLR014, SiHLR014)

• Straight Lead (IRLU014, SiHLU014)

• Available in Tape and Reel

• Logic-Level Gate Drive

•R

Specified at VGS = 4 V and 5 V

DS(on)

• Fast Switching

D

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

G

S

N-Channel MOSFET

Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)

Lead (Pb)-free and Halogen-free SiHLR014-GE3 - SiHLR014TRL-GE3 SiHLU014-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRLR014PbF IRLR014TRPbF

SiHLR014-E3 SiHLR014T-E3

a

IRLR014TRLPbF

a

SiHLR014TL-E3

a

IRLU014PbF

a

SiHLU014-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current V

Pulsed Drain Current

a

Linear Derating Factor 0.20

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

e

b

Maximum Power Dissipation T

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

c

e

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 , IAS = 7.7 A (see fig. 12).

DD

c. I

 10 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0164-Rev. D, 04-Feb-13

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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at 5.0 V

GS

= 25 °C

C

TA = 25 °C 2.5

d

for 10 s 260

DS

± 10

GS

T

= 25 °C

C

= 100 °C 4.9

C

I

D

IDM 31

E

AS

P

D

dV/dt 4.5 V/ns

, T

J

stg

- 55 to + 150

1

60

7.7

0.020

W/°C

27.4 mJ

25

Document Number: 91321

V

AT

W

°C

IRLR014, IRLU014, SiHLR014, SiHLU014

D

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

- - 110

--50

--5.0

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.073 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

V

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

- 170 -

oss

-42-

rss

g

--3.5

gs

--6.0

gd

d(on)

r

-17-

d(off)

-26-

f

D

S

V

Between lead,
6 mm (0.25") from
package and center of
die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = 250 μA 60 - - V

VDS = VGS, ID = - 250 μA 1.0 - 2.0 V

= ± 10 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

V

= 48 V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 5.0 V ID = 4.6 A

GS

= 4.0 V ID = 3.9 A

GS

b

b

VDS = 25 V, ID = 4.6 A 3.4 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 10 A, VDS = 48 V,

I

= 5.0 V

GS

V

R

= 12 , RD = 2.8 , see fig. 10

g

TJ = 25 °C, IS = 7.7 A, VGS = 0 V

D

see fig. 6 and 13

= 30 V, ID = 10 A,

DD

c

b

b

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

- - 0.20

- - 0.28

- 400 -

--8.4

-9.3-

- 110 -

-4.5-

-7.5-

--7.7

--31

--1.6V

- 65 130 ns

- 0.33 0.65 μC

μA



pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

S13-0164-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91321

IRLR014, IRLU014, SiHLR014, SiHLU014

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

S13-0164-Rev. D, 04-Feb-13

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3

Document Number: 91321

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IRLR014, IRLU014, SiHLR014, SiHLU014

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

S13-0164-Rev. D, 04-Feb-13

For technical questions, contact: [e-mail]

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4

Document Number: 91321

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Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

5 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

IRLR014, IRLU014, SiHLR014, SiHLU014

Vishay Siliconix

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10b - Switching Time Waveforms

S13-0164-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

5

Document Number: 91321

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www.vishay.com

R

g

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

5 V

Var y t

p

to obtain

required I

AS

Q

GS

Q

GD

Q

G

V

G

Charge

5 V

IRLR014, IRLU014, SiHLR014, SiHLU014

Vishay Siliconix

V

DS

t

p

V

DS

I

AS

V

DD

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 12b - Unclamped Inductive Waveforms

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

S13-0164-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

3 mA

Current sampling resistors

6

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0.3 µF

+

V

D.U.T.

I

G

I

DS

-

D

Document Number: 91321

IRLR014, IRLU014, SiHLR014, SiHLU014

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

www.vishay.com

Vishay Siliconix

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91321

S13-0164-Rev. D, 04-Feb-13

.

For technical questions, contact: [e-mail]

7

Document Number: 91321

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

Package Information

Vishay Siliconix

TO-252AA Case Outline

E

b3

L3

D

L4

L5

b

e1

E1

b2

e

D1

A

C2

H

L

C

A1

gage plane height (0.5 mm)

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 2.18 2.38 0.086 0.094

A1 - 0.127 - 0.005

b 0.64 0.88 0.025 0.035

b2 0.76 1.14 0.030 0.045

b3 4.95 5.46 0.195 0.215

C 0.46 0.61 0.018 0.024

C2 0.46 0.89 0.018 0.035

D 5.97 6.22 0.235 0.245

D1 4.10 - 0.161 -

E 6.35 6.73 0.250 0.265

E1 4.32 - 0.170 -

H 9.40 10.41 0.370 0.410

e 2.28 BSC 0.090 BSC

e1 4.56 BSC 0.180 BSC

L 1.40 1.78 0.055 0.070

L3 0.89 1.27 0.035 0.050

L4 - 1.02 - 0.040

L5 1.01 1.52 0.040 0.060

ECN: T13-0359-Rev. O, 03-Jun-13
DWG: 5347

Notes

• Dimension L3 is for reference only.

• Xi’an, Mingxin, and GEM SH actual photo.

Revision: 03-Jun-13

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

Document Number: 71197

TO-251AA (HIGH VOLTAGE)

Package Information

Vishay Siliconix

4

E1

View A - A

Thermal PAD

D1

4

(Datum A)

3

E

b4

θ2

5

C

L3

L1

B

B

2 x e

Lead tip

A

4

L2

D

C

L

3 x b2

3 x b

0.010 C BMA

0.010 BA

B

3

M

0.25

C

4

0.25

Plating

(c)

Section B - B and C - C

5

b1, b3

(b, b2)

Base
metal

c1

A

c2

θ1

5

A

C

Seating
plane

A

A1

c

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -

A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265

b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -

b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC

b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380

b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090

b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050

c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060

c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15'

c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35'

D 5.97 6.22 0.235 0.245

ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension are shown in inches and millimeters.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.

5. Lead dimension uncontrolled in L3.

6. Dimension b1, b3 and c1 apply to base metal only.

7. Outline conforms to JEDEC outline TO-251AA.

Document Number: 91362 www.vishay.com
Revision: 15-Sep-08 1

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

Application Note 826

Vishay Siliconix

0.243
(6.180)

Return to Index

Return to Index

0.420
(10.668)

0.180

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.087

0.090

0.055

(1.397)

(2.202)

(2.286)

APPLICATION NOTE

Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000