Page 1
Power MOSFET
IRLL014, SiHLL014
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 60
(Ω)V
R
DS(on)
Q
(Max.) (nC) 8.4
g
(nC) 3.5
Q
gs
Q
(nC) 6.0
gd
Configuration Single
= 5.0 V 0.20
GS
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
•R
•Fast Switching
Specified at VGS = 4 V and 5 V
DS(on)
• Ease of Paralleling
D
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
SOT-223
D
S
D
G
G
S
N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package SOT-223 SOT-223
Lead (Pb)-free and Halogen-free SiHLL014-GE3 SiHLL014TR-GE3
Lead (Pb)-free
SnPb
Note
a. See device orientation.
IRLL014PbF IRLL014TRPbF
SiHLL014-E3 SiHLL014T-E3
IRLL014 IRLL014TR
SiHLL014 SiHLL014T
a
a
a
a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
T
= 100 °C 1.7
C
DS
± 10
GS
I
D
IDM 22
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
e
b
a
a
= 25 °C
e
c
C
TA = 25 °C 2.0
E
AS
I
AR
E
AR
P
D
dV/dt 4.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 2.7 A (see fig. 12).
DD
c. I
≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
60
2.7
0.017
100 mJ
2.7 A
0.31 mJ
3.1
- 55 to + 150
d
V
A
W/°C
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91319 www.vishay.com
S10-1257-Rev. C, 31-May-10 1
Page 2
IRLL014, SiHLL014
D
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.073 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
a
R
thJA
thJC
DS
GS(th)
V
GSS
--60
°C/W
--40
VGS = 0 V, ID = 250 μA 60 - - V
VDS = VGS, ID = 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
DSS
DS(on)
fs
iss
- 170 -
oss
-42-
rss
g
--3.5
gs
--6.0
gd
d(on)
r
-17-
d(off)
-26-
f
D
S
S
I
SM
SD
rr
rr
on
V
= 48 V, VGS = 0 V, TJ = 125 °C - - 250
DS
= 5.0 V ID = 1.6 A
V
GS
V
= 4.0 V ID = 1.4 A
GS
b
b
- - 0.20
- - 0.28
VDS = 25 V, ID = 1.6 A 3.2 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
- 400 -
--8.4
= 10 A, VDS = 48 V,
I
V
GS
= 5.0 V
D
see fig. 6 and 13
b
-9.3-
V
= 30 V, ID = 10 A,
DD
R
= 12 Ω, RD = 2.8 Ω, see fig. 10
G
Between lead,
6 mm (0.25") from
package and center of
G
die contact
MOSFET symbol
showing the
integral reverse
G
p - n junction diode
TJ = 25 °C, IS = 2.7 A, VGS = 0 V
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs
b
D
S
b
- 110 -
-4.0-
-6.0-
--2.7
--22
--1.6V
- 65 130 ns
b
- 0.33 0.65 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
Ω
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91319
2 S10-1257-Rev. C, 31-May-10
Page 3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
V
GS
Top
7.5 V
1
10
5.0 V
4.0 V
3.5 V
3.0 V
2.75 V
Bottom
2.5 V
0
10
IRLL014, SiHLL014
Vishay Siliconix
1
10
150 °C
0
10
-1
10
, Drain Current (A)
D
I
-2
10
2.25 V
20 µs Pulse Width
= 25 °C
T
C
-1
10
0
10
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
V
GS
Top
7.5 V
5.0 V
4.0 V
1
10
3.5 V
3.0 V
2.75 V
Bottom
2.5 V
0
10
rrent (A)
u
2.25 V
20 µs Pulse Width
T
= 150 °C
C
1
10
, Drain C
D
I
-1
10
-2
10
-1
10
0
10
VDS, Drain-to-Source Voltage (V)
-1
10
, Drain Current (A)
-2
D
10
I
-3
10
2
25 °C
20 µs Pulse Width
V
2.5 3 3.5 4 4.5 5
V
Gate-to-Source Voltage (V)
,
GS
Fig. 3 - Typical Transfer Characteristics
3.0
I
= 10 A
D
= 10 V
V
GS
2.5
2.0
1.5
(Normalized)
1.0
, Drain-to-Source On Resistance
0.5
DS(on)
0.0
R
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
Junction Temperature (°C)
,
J
= 25 V
DS
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91319 www.vishay.com
S10-1257-Rev. C, 31-May-10 3
Page 4
IRLL014, SiHLL014
Vishay Siliconix
700
600
V
= 0 V, f = 1 MHz
GS
= Cgs + Cgd, Cds Shorted
C
iss
= C
C
rss
gd
C
= Cds + C
oss
gd
500
400
C
iss
300
C
Capacitance (pF)
200
100
0
0
10
V
10
Drain-to-Source Voltage (V)
,
DS
oss
C
rss
1
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
ID = 10 A
6
6
V
= 30 V
DS
V
DS
= 48 V
4
2
, Gate-to-Source Voltage (V)
GS
V
0
0
2
4
For test circuit
see figure 13
86
10
QG, Total Gate Charge (nC)
TJ = 150 °C
1
10
= 25 °C
T
0
10
J
, Reverse Drain Current (A)
SD
I
-1
10
0.4
1.61.20.8
V
2.0
GS
= 0 V
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
3
10
5
2
Operation in this area limited by R
2
10
5
2
10
5
2
1
, Drain Current (A)
D
I
5
2
0.1
25
0.1
1
TC = 25 °C
= 150 °C
T
J
Single Pulse
25
10
100 µs
1 ms
25
10
DS(on)
10 ms
2
25
VDS, Drain-to-Source Voltage (V)
2.4
10
3
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91319
4 S10-1257-Rev. C, 31-May-10
Page 5
3.0
2.5
2.0
1.5
1.0
, Drain Current (A)
D
I
0.5
0.0
25 1501251007550
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRLL014, SiHLL014
Vishay Siliconix
R
D.U.T.
D
+
-
t
t
d(off)
f
V
DS
V
GS
R
g
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
t
d(on)
r
Fig. 10b - Switching Time Waveforms
V
DD
2
10
)
thJC
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
-1
10
Thermal Response (Z
-2
10
-5
10
P
DM
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor, D = t
2. Peak Tj = PDM x Z
-4
10
-3
10
-2
10
0.1 1 10
1
10
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
t
1
t
2
1/t2
+ T
thJC
C
2
3
Document Number: 91319 www.vishay.com
S10-1257-Rev. C, 31-May-10 5
Page 6
IRLL014, SiHLL014
Vishay Siliconix
V
to obtain
Var y t
p
required I
AS
DS
R
g
D.U.T
I
AS
10 V
L
t
p
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
250
200
150
100
50
V
DS
t
p
+
V
DD
-
V
DS
I
AS
V
DD
Fig. 12b - Unclamped Inductive Waveforms
I
To p
Bottom
D
1.2 A
1.7 A
2.7 A
, Single Pulse Avalanche Energy (mJ)
AS
E
V
= 25 V
DD
0
25 150
50
125
10075
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
Q
V
GS
Q
GS
V
G
G
Q
GD
12 V
V
GS
0.2 µF
50 kΩ
3 mA
0.3 µF
D.U.T.
+
-
Charge
I
G
Current sampling resistors
I
D
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
V
DS
www.vishay.com Document Number: 91319
6 S10-1257-Rev. C, 31-May-10
Page 7
Peak Diode Recovery dV/dt Test Circuit
IRLL014, SiHLL014
Vishay Siliconix
D.U.T.
+
-
R
g
Driver gate drive
P.W.
+
-
Period
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
• dV/dt controlled by R
• Driver same type as D.U.T.
I
controlled by duty factor “D”
•
SD
• D.U.T. - device under test
-
D =
g
P.W.
Period
+
+
V
DD
-
V
= 10 Va
GS
D.U.T. l
waveform
SD
Reverse
recovery
current
Re-applied
voltage
D.U.T. V
Inductor current
Note
a. V
waveform
DS
= 5 V for logic level devices
GS
Body diode forward
current
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Ripple ≤ 5 %
V
DD
I
SD
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91319
.
Document Number: 91319 www.vishay.com
S10-1257-Rev. C, 31-May-10 7
Page 8
SOT-223 (HIGH VOLTAGE)
Package Information
Vishay Siliconix
3
B
B1
0.10 (0.004)
0.10 (0.004)
0.20 (0.008)
3 x B
0.10 (0.004)
H
D
3
A
4
3
E
1
2
e
e1
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 1.55 1.80 0.061 0.071
B 0.65 0.85 0.026 0.033
B1 2.95 3.15 0.116 0.124
C 0.25 0.35 0.010 0.014
D 6.30 6.70 0.248 0.264
E 3.30 3.70 0.130 0.146
e 2.30 BSC 0.0905 BSC
e1 4.60 BSC 0.181 BSC
H 6.71 7.29 0.264 0.287
L 0.91 - 0.036 -
L1 0.061 BSC 0.0024 BSC
θ - 10' - 10'
ECN: S-82109-Rev. A, 15-Sep-08
DWG: 5969
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension do not include mold flash.
4. Outline conforms to JEDEC outline TO-261AA.
A
M
M
M
M
C
C B
M
M
C A
M
M
C B
C
L1
4 x L
θ
0.08 (0.003)
4 x C
Document Number: 91363 www.vishay.com
Revision: 15-Sep-08 1
Page 9
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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