Datasheet SIHG20N50CE3 Specification

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N-Channel MOSFET

G

D

S

TO-247

G

D

S

PRODUCT SUMMARY

VDS (V) at TJ max. 560

R

(Ω)V

DS(on)

Q

max. (nC) 76

g

Q

(nC) 21

gs

Q

(nC) 34

gd

Configuration Single

= 10 V 0.270

GS

Power MOSFET

FEATURES

• Low figure-of-merit Ron x Q

• 100 % avalanche tested

• High peak current capability

• dv/dt ruggedness

• Improved T

• Improved gate charge

• High power dissipations capability

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

SiHG20N50C

Vishay Siliconix

g

Available

rr/Qrr

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free SiHG20N50C-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

Gate-source voltage V

T

= 25 °C

Continuous drain current (T

Pulsed drain current

b

= 150 °C)

J

a

VGS at 10 V

C

= 100 °C 11

C

DS

± 30

GS

I

D

IDM 80

Linear derating factor 1.8 W/°C

Single pulse avalanche energy

Maximum power dissipation P

Reverse diode dV/dt

d

Operating junction and storage temperature range T

Soldering recommendations (peak temperature)

c

E

AS

D

dV/dt 5 V/ns

, T

J

d

For 10 s 300

stg

Notes

a. Limited by maximum junction temperature
b. Repetitive rating; pulse width limited by maximum junction temperature
c. V

= 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A

DD

d. I

≤ 18 A, di/dt ≤ 380 A/μs, VDD ≤ VDS, TJ ≤ 150 °C

SD

e. 1.6 mm from case

500

20

361 mJ

250 W

-55 to +150

V

AT

°C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum junction-to-ambient R

Maximum junction-to-case (drain) R

thJA

thJC

S21-0453-Rev. E, 10-May-2021

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-40

-0.5

1

Document Number: 91382

°C/W

SiHG20N50C

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

V

temperature coefficient ΔVDS/T

DS

Gate-source threshold voltage (N) V

Gate-source leakage I

Zero gate voltage drain current I

Drain-source on-state resistance R

Forward transconductance g

Dynamic

Input capacitance C

Reverse transfer capacitance C

Total gate charge Q

Gate-drain charge Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Gate input resistance R

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

Pulsed diode forward current I

DS

GS(th)

GSS

DSS

DS(on)

fs

iss

oss

rss

g

-29-

gd

d(on)

r

d(off)

f

g

S

SM

VGS = 0 V, ID = 250 μA 500 - - V

Reference to 25 °C, ID = 1 mA - 0.7 - V/°C

J

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

VGS = ± 30 V - - ± 100 nA

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

V

DS

VGS = 10 V ID = 10 A - 0.225 0.270 Ω

VDS = 50 V, ID = 10 A - 6.4 - S

VGS = 0 V,
V

= 25 V,

DS

f = 1 MHz

VGS = 10 V ID = 18 A, VDS = 400 V

VDD = 250 V, ID = 18 A, Rg = 9.1 Ω

f = 1 MHz, open drain - 1.1 - Ω

MOSFET symbol
showing the

integral reverse
p - n junction diode

D

G

S

Vishay Siliconix

- 2451 2942

- 300 360

-2632

-6576

-80-

-27-

-32-

-44-

--20

--80

μA

pFOutput capacitance C

nCGate-source charge Qgs -21-

ns

A

Diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Reverse recovery current I

S21-0453-Rev. E, 10-May-2021

SD

rr

rr

RRM

TJ = 25 °C, IS = 18 A, VGS = 0 V - - 1.5 V

TJ = 25 °C, IF = IS,
di/dt = 100 A/μs

, V

2

= 35 V

R

-503- ns

-6.7-μC

-30- A

Document Number: 91382

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VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

0

10

20

30

40

50

60

70

0612 18

24

30

7.0 V

Bottom

To p

V

GS

15 V
14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

TJ = 25 °C

0

10

20

30

40

0 6 12 18 24 30

7.0 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V
14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

TJ = 150 °C

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

0

0.5

1

1.5

2

2.5

3

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

ID = 17 A

V

GS

= 10 V

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

0

4

8

12

16

20

0306090120

ID = 17 A

V

DS

= 250 V

V

DS

= 100 V

V

DS

= 400 V

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiHG20N50C

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

100

TJ= 150 °C

10

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

5

10

4

10

3

10

Capacitance (pF)

2

10

10

1101001000

V

Drain-to-Source Voltage (V)

,

DS

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

C

iss

C

oss

C

rss

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

1

, Drain Current (A)

D

0.1

I

0.01

Fig. 3 - Typical Transfer Characteristics

S21-0453-Rev. E, 10-May-2021

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

T

= 25 °C

J

5678910

V

Gate-to-Source Voltage (V)

,

GS

For technical questions, contact: [e-mail]

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Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91382

VSD, Source-to-Drain Voltage (V)

I

SD

, Reverse Drain Current (A)

0.1

1

10

100

0.2 0.5 0.8 1.1 1.4

TJ = 150 °C

T

J

= 25 °C

V

GS

= 0 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

Operation in this area limited

by R

DS(on)

1 ms

10 ms

100 µs

1000

1

10

100

10

100 1000

10 000

0.1

I

D

, Drain Current (A)

TC, Case Temperature (°C)

0

5

10

15

20

25 50 75 100 125 150

10

-4

10

-3

10

-2

0.1 1

Normalized Effective Transient

Thermal Impedance

0.01

0.1

1

Pulse Time (s)

Single Pulse

0.02

0.05

0.1

0.2

Duty Cycle = 0.5

SiHG20N50C

www.vishay.com

Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area

Vishay Siliconix

S21-0453-Rev. E, 10-May-2021

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case (TO-247)

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Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

10 V

+

-

V

DS

V

DD

90 %

10 %

t

d(on)

t

r

t

d(off)

t

f

R

g

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

10 V

Var y tp to obtain
required I

AS

Q

GS

Q

GD

Q

G

V

G

Charge

10 V

Fig. 11 - Switching Time Test Circuit

SiHG20N50C

Vishay Siliconix

Fig. 15 - Basic Gate Charge Waveform

V

DS

V

GS

Fig. 12 - Switching Time Waveforms

Fig. 13 - Unclamped Inductive Test Circuit

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

0.3 µF

D.U.T.

V

GS

3 mA

I

G

Current sampling resistors

I

D

Fig. 16 - Gate Charge Test Circuit

+

V

DS

-

V

DS

t

p

V

DS

I

AS

V

DD

Fig. 14 - Unclamped Inductive Waveforms

S21-0453-Rev. E, 10-May-2021

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For technical questions, contact: [e-mail]

Document Number: 91382

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SiHG20N50C

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

-

D =

g

Period

P.W.

+

+

V

DD

-

V

= 10 Va

GS

D.U.T. l

waveform

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. V

Inductor current

Note

a. V

waveform

DS

= 5 V for logic level devices

GS

Body diode forward

current

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Ripple ≤ 5 %

V

DD

I

SD

Fig. 17 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91382

S21-0453-Rev. E, 10-May-2021

.

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VERSION 1: FACILITY CODE = 9

Package Information

Vishay Siliconix

TO-247AC (High Voltage)

MILLIMETERS MILLIMETERS

DIM. MIN. MAX. NOTES DIM. MIN. MAX. NOTES

A 4.83 5.21 D1 16.25 16.85 5

A1 2.29 2.55 D2 0.56 0.76

A2 1.50 2.49 E 15.50 15.87 4

b 1.12 1.33 E1 13.46 14.16 5

b1 1.12 1.28 E2 4.52 5.49 3

b2 1.91 2.39 6 e 5.44 BSC

b3 1.91 2.34 L 14.90 15.40

b4 2.87 3.22 6, 8 L1 3.96 4.16 6

b5 2.87 3.18 Ø P 3.56 3.65 7

c 0.55 0.69 6 Ø P1 7.19 ref.

c1 0.55 0.65 Q 5.31 5.69

D 20.40 20.70 4 S 5.54 5.74

Notes

(1)

Package reference: JEDEC® TO247, variation AC

(2)

All dimensions are in mm

(3)

Slot required, notch may be rounded

(4)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body

(5)

Thermal pad contour optional with dimensions D1 and E1

(6)

Lead finish uncontrolled in L1

(7)

Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm

(8)

Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition

Revision: 19-Oct-2020

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 91360

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0.10 AC

M M

E

E/2

(2)

(4)

R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

L1

1

2

3

Q

D

A

A2

A

A

A1

C

Ø k BD

M M

A

ØP

(Datum B)

ØP1

D1

4

E1

0.01 BD

M M

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

4

3

5

7

4

4

4

Lead Assignments

1. Gate

2. Drain

3. Source

4. Drain

VERSION 2: FACILITY CODE = Y

Package Information

Vishay Siliconix

MILLIMETERS MILLIMETERS

DIM. MIN. MAX. NOTES DIM. MIN. MAX. NOTES

A 4.58 5.31 D2 0.51 1.30

A1 2.21 2.59 E 15.29 15.87

A2 1.17 2.49 E1 13.72 -

b 0.99 1.40 e 5.46 BSC

b1 0.99 1.35 Ø k 0.254

b2 1.53 2.39 L 14.20 16.25

b3 1.65 2.37 L1 3.71 4.29

b4 2.42 3.43 Ø P 3.51 3.66

b5 2.59 3.38 Ø P1 - 7.39

c 0.38 0.86 Q 5.31 5.69

c1 0.38 0.76 R 4.52 5.49

D 19.71 20.82 S 5.51 BSC

D1 13.08 -

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7)

Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 19-Oct-2020

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Document Number: 91360

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c1

c

b, b2, b4

Plating

Base metal

b1, b3, b5

0.01 M

DB

E1

D1

P

A

P1

D2

K

A2

D

A

A1

C

b2

b

b4

e

L

C

L1

D

S

R

Q

N

R/2

E

B

M

M

DB

M

0.10 MCAM

VERSION 3: FACILITY CODE = N

Package Information

Vishay Siliconix

MILLIMETERS MILLIMETERS

DIM. MIN. MAX. DIM. MIN. MAX.

A 4.65 5.31 D2 0.51 1.35

A1 2.21 2.59 E 15.29 15.87

A2 1.17 1.37 E1 13.46 -

b 0.99 1.40 e 5.46 BSC

b1 0.99 1.35 k 0.254

b2 1.65 2.39 L 14.20 16.10

b3 1.65 2.34 L1 3.71 4.29

b4 2.59 3.43 N 7.62 BSC

b5 2.59 3.38 P 3.56 3.66

c 0.38 0.89 P1 - 7.39

c1 0.38 0.84 Q 5.31 5.69

D 19.71 20.70 R 4.52 5.49

D1 13.08 - S 5.51 BSC

ECN: E20-0545-Rev. F, 19-Oct-2020
DWG: 5971

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

Revision: 19-Oct-2020

3

Document Number: 91360

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Disclaimer

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.

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Revision: 01-Jan-2021

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