Datasheet IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL DataSheet (Vishay)

N-Channel MOSFET

G

D

S

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 60

()V

R

DS(on)

Q

(Max.) (nC) 110

g

(nC) 29

Q

gs

Q

(nC) 36

gd

Configuration Single

= 10 V 0.018

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Advanced Process Technology

• Dynamic dV/dt

• 175 °C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

• Drop in Replacement of the IRFZ48, SiHFZ48 for
Linear/Audio Applications

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.

2

The D

PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The

2

D

PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFZ48RS-GE3 -

Lead (Pb)-free

IRFZ48RSPbF IRFZ48RLPbF
SiHFZ48RS-E3 SiHFZ48RL-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current

Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, Starting TJ = 25 °C, L = 22 μH, Rg = 25 , IAS = 72 A (see fig. 12).

DD

c. ISD  72 A, dI/dt  200 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 72 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91296
S11-1054-Rev. C, 30-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

e

a, e

b, e

c, e

VGS at 10 V

d

This document is subject to change without notice.

C

T

= 100 °C

C

= 25 °C P

C

for 10 s

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DS

GS

I

D

IDM

E

AS

D

dV/dt

, T

J

stg

60

± 20

50
50

290

1.3
100
190

4.5

- 55 to + 175

d

300

10

1.1

www.vishay.com/doc?91000

V

A

W/°C

mJ

W

V/ns

°C

lbf · in

N · m

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Current limited by the package, (die current = 72 A).

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 43 A

DS(on)

fs

iss

- 1300 -

oss

- 190 -

rss

g

--29

gs

--36

gd

d(on)

r

- 210 -

d(off)

- 250 -

f

D

V

V

GS

R

g

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.8

VGS = 0 V, ID = 250 μA 60 - - V

c

-0.60-V/°C

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

DS

VDS = 25 V, ID = 43 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

c

- - 0.018 

27 - - S

- 2400 -

- - 110

= 72 A, VDS = 48 V,

I

= 10 V

D

see fig. 6 and 13

b, c

-8.1-

= 30 V, ID = 72 A,

V

DD

= 9.1 , RD = 0.34 , see fig. 10

G

G

TJ = 25 °C, IS = 72 A, VGS = 0 V

b, c

D

S

D

S

b

b, c

- 250 -

-4.5-

-7.5-

--50

c

- - 290

--2.0V

- 120 180 ns

- 0.50 0.80 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91296
2 S11-1054-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

2.5

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

Fig. 4 - Normalized On-Resistance vs. Temperature

72A

I =

D

V =

GS

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

°

10V

Document Number: 91296 www.vishay.com
S11-1054-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

1

10

100

1000

0.1 1 10 100 1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T T= 175 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91296
4 S11-1054-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

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25 50 75 100 125 150 175

0

20

40

60

80

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Note s:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response(Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

R

D.U.T.

D

+

V

-

DD

V

DS

V

GS

R

g

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91296 www.vishay.com
S11-1054-Rev. C, 30-May-11 5

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

A

R

g

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

Driver

15 V

20 V

I

AS

V

DS

t

p

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

10 V

250

200

TOP

BOTTOM

I

D
29A
51A
72A

150

100

50

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

°

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

G

Q

GS

V

G

Q

GD

Charge

Fig. 13a - Maximum Avalanche Energy vs. Drain Current Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91296
6 S11-1054-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

-

D =

g

P.W.

Period

+

+

V

DD

-

V

= 10 Va

GS

D.U.T. l

waveform

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. V

Inductor current

Note

a. V

waveform

DS

= 5 V for logic level devices

GS

Body diode forward

current

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Ripple ≤ 5 %

V

DD

I

SD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91296

.

Document Number: 91296 www.vishay.com
S11-1054-Rev. C, 30-May-11 7

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

TO-263AB (HIGH VOLTAGE)

(Datum A)

34

E

L1

4

D

L2

4

C

1

B

B

C

3

2

B

B

Package Information

Vishay Siliconix

A

A

5

H

Detail A

B

A

c2

Gauge
plane

0° to 8°

L

L3

L4

Detail “A”
Rotated 90° CW
scale 8:1

H

B

Seating plane

A1

2 x e

Lead tip

2 x b2

2 x b

0.010 A B

MM

Plating

(c)

Section B - B and C - C

c

± 0.004 B

5

b1, b3

(b, b2)

Scale: none

M

Base
metal

c1

A

E

D1

4

5

E1

View A - A

4

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1

I2PAK (TO-262) (HIGH VOLTAGE)

(Datum A)

E

L1

Package Information

Vishay Siliconix

A

A

B

c2

A

E

D

L2

0.010 A B

Lead tip

B

2 x e

M

Seating

plane

C

C

B

M

3 x b2

3 x b

L

A1

A

E1

Section A - A

Plating

c

b1, b3

(b, b2)

Section B - B and C - C

Scale: None

c

D1

Base
metal

c1

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380

A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -

b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420

b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -

b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC

b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065

c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146

c2 1.14 1.65 0.045 0.065

ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.

3. Thermal pad contour optional within dimension E, L1, D1, and E1.

4. Dimension b1 and c1 apply to base metal only.

Document Number: 91367 www.vishay.com
Revision: 27-Oct-08 1

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420

(10.668)

0.635
(16.129)

0.355

AN826

Vishay Siliconix

(9.017)

Return to Index

0.135

(3.429)

0.200

(5.080)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.257)

0.145

(3.683)

Document Number: 73397
11-Apr-05

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1

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

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16

1

Document Number: 91000