Datasheet IRFZ48R, SiHFZ48R DataSheet (Vishay)

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

IRFZ48R, SiHFZ48R

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 60

(Ω)V

R

DS(on)

Q

(Max.) (nC) 110

g

Q

(nC) 29

gs

Q

(nC) 36

gd

Configuration Single

= 10 V 0.018

GS

FEATURES

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

• Drop in Replacement of the SiHFZ48 for Linear/Audio
Applications

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFZ48RPbF
SiHFZ48R-E3
IRFZ48R
SiHFZ48R

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

Continuous Drain Current

Pulsed Drain Current
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω IAS = 72 A (see fig. 12).

DD

≤ 72 A, dV/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.

c. I

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91295 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

b

a

a

c

VGS at 10 V

This datasheet is subject to change without notice.

TC = 25 °C

= 100 °C 50

C

= 25 °C P

C

60

DS

± 20

GS

I

D

IDM 290

E

AS

I

AR

E

AR

D

dV/dt 4.5 V/ns

, T

J

stg

50

100 mJ

50 A
19 mJ

190 W

- 55 to + 175

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

AT

°C

IRFZ48R, SiHFZ48R

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-0.8

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

- 1300 -

oss

- 190 -

rss

g

--29

gs

--36

gd

d(on)

r

- 210 -

d(off)

- 250 -

f

D

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

VGS = 0 V, ID = 250 μA 60 - -

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

V

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

DS

= 10 V ID = 43 A

GS

VDS = 25 V, ID = 43 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--0.018Ω

27 - - S

- 2400 -

- - 110

V

GS

= 10 V

ID = 72 A, VDS = 48 V,

see fig. 6 and 13

b

-8.1-

V

= 30 V, ID = 72 A,

R

DD

= 9.1 Ω, RD = 0.34 Ω, see fig. 10

g

G

b

D

S

- 250 -

-4.5-

-7.5-

--50

- - 290

TJ = 25 °C, IS = 72 A, VGS = 0 V

TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μs

b

--2.0V

- 120 180 ns

b

- 0.50 0.80 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91295
2 S11-0518-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

ecnat

s

is
eR
n

O e
cruoS-ot-n

i
a

r
D ,

R

)dezilamro

N
(

J

)no(S

D

°

V =

I =

GS

D

10V

72A

IRFZ48R, SiHFZ48R

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics

Document Number: 91295 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFZ48R, SiHFZ48R

1

10

100

1000

0.1 1 10 100 1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T T= 175 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

)A(

tnerru

C
n

iar

D

,
I

)A(

tnerru

C
n

iar

D

,
I

DS

D

10us

100us

1ms

10ms

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com Document Number: 91295
4 S11-0518-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

Fig. 8 - Maximum Safe Operating Area

www.vishay.com/doc?91000

25 50 75 100 125 150 175

0

20

40

60

80

T , Case Temperature ( C)

)A( tnerruC niarD , I

°

C

D

LIMITED BY PACKAGE

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10 V

+

-

V

DS

V

DD

IRFZ48R, SiHFZ48R

Fig. 9 - Maximum Drain Current vs. Case Temperature

Vishay Siliconix

Fig. 10a - Switching Time Test Circuit

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig. 10b - Switching Time Waveforms

1

D = 0.50

C
J

Z(

ht

esnopseR lamrehT )

0.20

0.1

0.10

0.05

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

Document Number: 91295 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

P

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Note s:

1. Duty fac tor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

This datasheet is subject to change without notice.

DM

t

1

t

2

www.vishay.com/doc?91000

IRFZ48R, SiHFZ48R

R

G

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

10 V

Var y tp to obtain
required I

AS

25 50 75 100 125 150 175

0

50

100

150

200

250

Starting T , Junction Temperature ( C)

)Jm( ygrenE ehcnalavA esluP elgniS , E

J

SA

°

I

D

TOP

BOTTOM

29A
51A
72A

Q

GS

Q

GD

Q

G

V

G

Charge

V

GS

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

V

DS

t

p

V

DS

I

AS

V

DD

www.vishay.com Document Number: 91295
6 S11-0518-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 13a - Basic Gate Charge Waveform

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

This datasheet is subject to change without notice.

Fig. 13b - Gate Charge Test Circuit

www.vishay.com/doc?91000

IRFZ48R, SiHFZ48R

+

-

R

D.U.T.

g

Peak Diode Recovery dV/dt Test Circuit

+

-

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

•

I

controlled by duty factor “D”

SD

• D.U.T. - device under test

g

+

Vishay Siliconix

+

V

DD

-

Reverse
recovery
current

Re-applied
voltage

Driver gate drive

P.W.

D.U.T. l

D.U.T. V

Inductor current

Note

a. V

waveform

SD

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Fig. 14 - For N-Channel

Period

Body diode forward

current

Diode recovery

dV/dt

dI/dt

D =

Period

P.W.

V

V

I

SD

= 10 Va

GS

DD

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91295

.

Document Number: 91295 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220AB

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183

b 0.69 1.01 0.027 0.040

b(1) 1.20 1.73 0.047 0.068

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.09 6.48 0.240 0.255

J(1) 2.41 2.92 0.095 0.115

L 13.35 14.02 0.526 0.552

L(1) 3.32 3.82 0.131 0.150

Ø P 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118

ECN: T13-0724-Rev. O, 14-Oct-13
DWG: 5471

Note

* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Oct-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions, contact: [e-mail]

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Document Number: 71195

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000