Datasheet IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L DataSheet (Vishay)

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 60

()V

R

DS(on)

Q

(Max.) (nC) 67

g

Q

(nC) 18

gs

Q

(nC) 25

gd

Configuration Single

= 10 V 0.028

GS

D

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Advanced Process Technology

• Surface Mount (IRFZ44S, SiHFZ44S)

•

Low-Profile Through-Hole (IRFZ44L, SiHFZ44L

• 175 °C Operating Temperature

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer

G

with an extermely efficient reliabel deviece for use in a wide
variety of applications.

2

The D

PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

S

N-Channel MOSFET

highest power capability and lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRFZ44L, SiHFZ44L) is available
for low profile applications.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFZ44S-GE3 SiHFZ44STRR-GE3

Lead (Pb)-free

IRFZ44SPbF IRFZ44STRRPbF
SiHFZ44S-E3 SiHFZ44STR-E3

Note

a. See device orientation.

a

SiHFZ44STRL-GE3

a

IRFZ44STRLPbF

a

SiHFZ44STL-E3

a

a

a

­IRFZ44LPbF
SiHFZ44L-E3

)

2

PAK is

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V; starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12).
c. ISD  51 A, dI/dt  250 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. Calculated continuous current based on maximum allowable junction temperature.

f. Uses IRFZ44, SiHFZ44 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91293
S11-1063-Rev. C, 30-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

f

f

a, e

V

DS

VGS ± 20

e

VGS at 10 V

T

= 25 °C

C

= 100 °C 36

T

C

I

D

60

50

V

A

IDM 200

c, f

b

T

= 25 °C

A

= 25 °C 150

T

C

d

) for 10 s 300

E

AS

P

D

100 mJ

3.7
W

dV/dt 4.5 V/ns

, T

J

stg

- 55 to + 175
°C

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This document is subject to change without notice.

www.vishay.com/doc?91000

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient
(PCB Mounted, steady-state)

a

Maximum Junction-to-Case R

Note

a. When mounted on 1” square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.06 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRFZ44, SiHFZ44 data and test conditions.
d. Calculated continuous current based on maximum allowable junction temperature.

a

R

thJA

thJC

DS

GS(th)

V

GSS

-40
°C/W

-1.0

VGS = 0, ID = 250 μA 60 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

DSS

VGS = 10 V ID = 31 A

DS(on)

fs

iss

- 920 -

oss

- 170 -

rss

g

--18

gs

--25

gd

d(on)

r

-45-

d(off)

-92-

f

Between lead, and center of die contact - 7.5 -

S

S

I

SM

SD

rr

rr

on

V

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

DS

VDS = 25 V, ID = 31 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

d

- - 0.028 

15 - - S

- 1900 -

--67

= 51 A, VDS = 48 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-14-

V

= 30 V, ID = 51 A,

DD

R

= 9.1 , RD = 0,55 ,

g

see fig. 10

b

MOSFET symbol
showing the
integral reverse

G

p - n junction diode

TJ = 25 °C, IS = 51 A, VGS = 0 V

b

TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs

D

S

b, d

- 110 -

--50

- - 200

--2.5V

- 120 180 ns

- 530 800 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

d

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91293
2 S11-1063-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91293 www.vishay.com
S11-1063-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

’

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91293
4 S11-1063-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

r

D.U.T.

D

+

V

-

DD

V

DS

V

GS

R

g

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10b - Switching Time Waveforms

Document Number: 91293 www.vishay.com
S11-1063-Rev. C, 30-May-11 5

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

Var y tp to obtain
required I

AS

R

V

L

DS

I

AS

D.U.T

g

+

V

DD

-

V

DS

t

p

V

DS

V

DD

10 V

t

p

0.01 Ω

I

AS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

10 V

V

Q

GS

G

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91293
6 S11-1063-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91293

Document Number: 91293 www.vishay.com
S11-1063-Rev. C, 30-May-11 7

.

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 14 - For N-Channel

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TO-263AB (HIGH VOLTAGE)

(Datum A)

34

E

L1

4

D

L2

4

C

1

B

B

C

3

2

B

B

Package Information

Vishay Siliconix

A

A

5

H

Detail A

B

A

c2

Gauge
plane

0° to 8°

L

L3

L4

Detail “A”
Rotated 90° CW
scale 8:1

H

B

Seating plane

A1

2 x e

Lead tip

2 x b2

2 x b

0.010 A B

MM

Plating

(c)

Section B - B and C - C

c

± 0.004 B

5

b1, b3

(b, b2)

Scale: none

M

Base
metal

c1

A

E

D1

4

5

E1

View A - A

4

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1

I2PAK (TO-262) (HIGH VOLTAGE)

(Datum A)

E

L1

Package Information

Vishay Siliconix

A

A

B

c2

A

E

D

L2

0.010 A B

Lead tip

B

2 x e

M

Seating

plane

C

C

B

M

3 x b2

3 x b

L

A1

A

E1

Section A - A

Plating

c

b1, b3

(b, b2)

Section B - B and C - C

Scale: None

c

D1

Base
metal

c1

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380

A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -

b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420

b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -

b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC

b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065

c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146

c2 1.14 1.65 0.045 0.065

ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.

3. Thermal pad contour optional within dimension E, L1, D1, and E1.

4. Dimension b1 and c1 apply to base metal only.

Document Number: 91367 www.vishay.com
Revision: 27-Oct-08 1

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

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Revision: 13-Jun-16

1

Document Number: 91000