Datasheet IRFZ44R, SiHFZ44R DataSheet (Vishay)

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

IRFZ44R, SiHFZ44R

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 60

(Ω)V

R

DS(on)

Q

(Max.) (nC) 67

g

Q

(nC) 18

gs

Q

(nC) 25

gd

Configuration Single

= 10 V 0.028

GS

FEATURES

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

• Drop in Replacement of the IRFZ44, SiHFZ44 for
Linear/Audio Applications

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFZ44RPbF
SiHFZ44R-E3
IRFZ44R
SiHFZ44R

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12).

b. V

DD

≤ 51 A, dV/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.

c. I

SD

d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91292 www.vishay.com
S11-0517-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

e

a

b

c

VGS at 10 V

d

This datasheet is subject to change without notice.

TC = 25 °C

T

= 100 °C 36

C

= 25 °C P

C

for 10 s 300

60

DS

± 20

GS

I

D

IDM 200

E

AS

D

dV/dt 4.5 V/ns

, T

J

stg

50

100 mJ

150 W

- 55 to + 175

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

A

°C

IRFZ44R, SiHFZ44R

D

S

G

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.0

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

- 920 -

oss

- 170 -

rss

g

--18

gs

--25

gd

d(on)

r

-45-

d(off)

-92-

f

D

S

Between lead,
6 mm (0.25") from
package and center of
die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Current limited by the package (die current = 51 A).

VGS = 0 V, ID = 250 μA 60 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

V

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

DS

= 10 V ID = 31 A

GS

VDS = 25 V, ID = 31 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--0.028Ω

15 - - S

- 1900 -

--67

V

GS

= 10 V

ID = 51 A, VDS = 48 V,

see fig. 6 and 13

b

-14-

= 30 V, ID = 51 A,

V

R

DD

= 9.1 Ω, RD = 0.55 Ω, see fig. 10

g

b

- 110 -

-4.5-

-7.5-

--50

- - 200

TJ = 25 °C, IS = 51 A, VGS = 0 V

TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs

b

--2.5

- 120 180

b

- 0.53 0.80

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

c

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

V

ns

μC

www.vishay.com Document Number: 91292
2 S11-0517-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

51A

IRFZ44R, SiHFZ44R

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics

Document Number: 91292 www.vishay.com
S11-0517-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFZ44R, SiHFZ44R

1

10

100

1000

1 10 100 1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T T= 175 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

100us

1ms

10ms

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com Document Number: 91292
4 S11-0517-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 8 - Maximum Safe Operating Area

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

25 50 75 100 125 150 175

0

10

20

30

40

50

60

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10

Note s:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response(Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRFZ44R, SiHFZ44R

Fig. 9 - Maximum Drain Current vs. Case Temperature

V

DS

V

GS

R

G

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Vishay Siliconix

R

D

D.U.T.

+

V

-

DD

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91292 www.vishay.com
S11-0517-Rev. B, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFZ44R, SiHFZ44R

A

R

G

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

Driver

15 V

20 V

I

AS

V

DS

t

p

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

250

200

150

I

TOP

BOTTOM

D
21A
36A
51A

100

50

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

°

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

V

GS

Q

GS

V

G

G

Q

GD

Charge

www.vishay.com Document Number: 91292
6 S11-0517-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 13a - Basic Gate Charge Waveform

This datasheet is subject to change without notice.

Fig. 13b - Gate Charge Test Circuit

www.vishay.com/doc?91000

IRFZ44R, SiHFZ44R

+

-

R

D.U.T.

g

Peak Diode Recovery dV/dt Test Circuit

+

-

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

•

I

controlled by duty factor “D”

SD

• D.U.T. - device under test

g

+

Vishay Siliconix

+

V

DD

-

Reverse
recovery
current

Re-applied
voltage

Driver gate drive

P.W.

D.U.T. l

D.U.T. V

Inductor current

Note

a. V

waveform

SD

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Fig. 14 - For N-Channel

Period

Body diode forward

current

Diode recovery

dV/dt

dI/dt

D =

Period

P.W.

V

GS

V

DD

I

SD

= 10 Va

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91292

.

Document Number: 91292 www.vishay.com
S11-0517-Rev. B, 21-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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Revision: 13-Jun-16

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Document Number: 91000