Datasheet IRFR310, IRFU310, SiHFR310, SiHFU310 DataSheet (Vishay)

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IRFR310, IRFU310, SiHFR310, SiHFU310

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 400

R

()V

DS(on)

(Max.) (nC) 12

Q

g

Q

(nC) 1.9

gs

(nC) 6.5

Q

gd

Configuration Single

DPAK

(TO-252)

D

IPAK

(TO-251)

D

= 10 V 3.6

GS

G

D

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR310, SiHFR310)

• Straight Lead (IRFU310, SiHFU310)

• Available in Tape and Reel

• Fast Switching

• Fully Avalanche Rated

• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

S

G

S

D

G

S

N-Channel MOSFET

The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR310-GE3 SiHFR310TRL-GE3 SiHFR310TR-GE3 SiHFR310TRR-GE3 SiHFU310-GE3

Lead (Pb)-free

IRFR310PbF IRFR310TRLPbF
SiHFR310-E3 SiHFR310TL-E3

a

IRFR310TRPbF

a

SiHFR310T-E3

a

IRFR310TRRPbF

a

SiHFR310TR-E3

a

a

IRFU310PbF
SiHFU310-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

T

= 100 °C 1.1

C

DS

± 20

GS

I

D

IDM 6.0
Linear Derating Factor 0.20
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

e

b

a

a

= 25 °C

e

c

d

C

TA = 25 °C 2.5

for 10 s 260

E

AS

I

AR

E

AR

P

D

dV/dt 4.0 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = 1.7 A (see fig. 12).

DD

 1.7 A, dI/dt  40 A/μs, VDD  VDS, TJ  150 °C.

c. I

SD

d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).

400

1.7

0.020
86 mJ

1.7 A

2.5 mJ
25

- 55 to + 150

V

A

W/°C

W

°C

S13-0165-Rev. D, 04-Feb-13

1

Document Number: 91272

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR310, IRFU310, SiHFR310, SiHFU310

D

S

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient
(PCB Mounted, steady-state)

a

Maximum Junction-to-Ambient R

Maximum Junction-to-Case R

R

thJA

thJA

thJC

-50

- 110

-5.0

Note

a. When mounted on 1" square PCB ( FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.47 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 1.0 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

-34-

oss

-6.3-

rss

g

--1.9

gs

--6.5

gd

d(on)

r

-21-

d(off)

-11-

f

D

V

Between lead,
6 mm (0.25") from
package and center of

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = 250 μA 400 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 400 V, VGS = 0 V - - 25

V

= 320 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

VDS = 50 V, ID = 1.0 A

b

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 2.0 A, VDS = 320 V,

I

= 10 V

GS

V

D

see fig. 6 and 13

= 200 V, ID = 2.0 A,

DD

R

= 24 , RD = 95 ,

g

see fig. 10

TJ = 25 °C, IS = 1.7 A, VGS = 0 V

b, c

c

b, c

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

--3.6

0.97 - - S

- 170 -

--12

-7.9-

-9.9-

-4.5-

-7.5-

--1.7

--6.0

--1.6V

- 240 540 ns

- 0.85 1.6 μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S13-0165-Rev. D, 04-Feb-13

2

Document Number: 91272

IRFR310, IRFU310, SiHFR310, SiHFU310

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

S13-0165-Rev. D, 04-Feb-13

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Document Number: 91272

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IRFR310, IRFU310, SiHFR310, SiHFU310

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

S13-0165-Rev. D, 04-Feb-13

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Document Number: 91272

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Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

R

G

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

10 V

Var y t

p

to obtain

required I

AS

IRFR310, IRFU310, SiHFR310, SiHFU310

Vishay Siliconix

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10b - Switching Time Waveforms

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

S13-0165-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

V

DS

t

p

V

DS

V

DD

5

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

I

AS

Document Number: 91272

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Q

GS

Q

GD

Q

G

V

G

Charge

10 V

IRFR310, IRFU310, SiHFR310, SiHFU310

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

0.3 µF

D.U.T.

3 mA

I

G

Current sampling resistors

I

D

+

-

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

V

DS

S13-0165-Rev. D, 04-Feb-13

6

For technical questions, contact: [e-mail]

Document Number: 91272

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR310, IRFU310, SiHFR310, SiHFU310

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

www.vishay.com

Vishay Siliconix

Fig. 14 - For N-Channel

.

For technical questions, contact: [e-mail]

7

Document Number: 91272

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91272

S13-0165-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

Package Information

Vishay Siliconix

TO-252AA Case Outline

E

b3

L3

A

C2

DIM. MIN. MAX. MIN. MAX.

MILLIMETERS INCHES

A 2.18 2.38 0.086 0.094

A1 - 0.127 - 0.005

b 0.64 0.88 0.025 0.035

D

H

b2 0.76 1.14 0.030 0.045

b3 4.95 5.46 0.195 0.215

C 0.46 0.61 0.018 0.024

C2 0.46 0.89 0.018 0.035

L4

L5

L

D 5.97 6.22 0.235 0.245

D1 4.10 - 0.161 -

E 6.35 6.73 0.250 0.265

b

e1

b2

e

C

A1

E1 4.32 - 0.170 -

H 9.40 10.41 0.370 0.410

e 2.28 BSC 0.090 BSC

e1 4.56 BSC 0.180 BSC

gage plane height (0.5 mm)

L 1.40 1.78 0.055 0.070

L3 0.89 1.27 0.035 0.050

D1

L4 - 1.02 - 0.040

L5 1.01 1.52 0.040 0.060

ECN: T16-0236-Rev. P, 16-May-16

E1

DWG: 5347

Notes

• Dimension L3 is for reference only.

Revision: 16-May-16

1

Document Number: 71197

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-251AA (HIGH VOLTAGE)

Package Information

Vishay Siliconix

4

E1

View A - A

Thermal PAD

D1

4

(Datum A)

3

E

b4

θ2

5

C

L3

L1

B

B

2 x e

Lead tip

A

4

L2

D

C

L

3 x b2

3 x b

0.010 C BMA

0.010 BA

B

3

M

0.25

C

4

0.25

Plating

(c)

Section B - B and C - C

5

b1, b3

(b, b2)

Base
metal

c1

A

c2

θ1

5

A

C

Seating
plane

A

A1

c

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -

A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265

b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -

b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC

b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380

b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090

b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050

c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060

c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15'

c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35'

D 5.97 6.22 0.235 0.245

ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension are shown in inches and millimeters.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.

5. Lead dimension uncontrolled in L3.

6. Dimension b1, b3 and c1 apply to base metal only.

7. Outline conforms to JEDEC outline TO-251AA.

Document Number: 91362 www.vishay.com
Revision: 15-Sep-08 1

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

Application Note 826

Vishay Siliconix

0.243
(6.180)

Return to Index

Return to Index

0.420
(10.668)

0.180

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.087

0.090

0.055

(1.397)

(2.202)

(2.286)

APPLICATION NOTE

Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3

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

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16

1

Document Number: 91000