Datasheet IRFS9N60A, SiHFS9N60A DataSheet (Vishay)

www.vishay.com

N-Channel MOSFET

G

D

S

D2PAK (TO-263)

G

D

S

IRFS9N60A, SiHFS9N60A

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 600

R

()V

DS(on)

Q

max. (nC) 49

g

Q

(nC) 13

gs

Q

(nC) 20

gd

Configuration Single

= 10 V 0.75

GS

FEATURES

• Low gate charge Qg results in simple drive
requirement

• Improved gate, avalanche and dynamic dV/dt
ruggedness

• Fully characterized capacitance and avalanche
voltage and current

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

APPLICATIONS

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

APPLICABLE OFF LINE SMPS TOPOLOGIES

• Active clamped forward

•Main switch

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHFS9N60A-GE3 SiHFS9N60ATRR-GE3

Lead (Pb)-free

IRFS9N60APbF IRFS9N60ATRRPbF

SiHFS9N60A-E3 SiHFS9N60ATR-E3

Note

a. See device orientation.

a

SiHFS9N60ATRL-GE3

a

IRFS9N60ATRLPbF

a

SiHFS9N60ATL-E3

Available

Available





a

a

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 5.8

C

DS

± 30

GS

I

D

IDM 37

Linear Derating Factor 1.3 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

b

a

a

= 25 °C P

c

d

C

for 10 s 300

E

AS

I

AR

E

AR

D

dV/dt 5.0 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

= 25 °C, L = 6.8 mH, Rg = 25 , IAS = 9.2 A (see fig. 12).

J

 9.2 A, dI/dt  50 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

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600

9.2

290 mJ

9.2 A

17 mJ

170 W

-55 to +150

Document Number: 91287

V

AT

°C

IRFS9N60A, SiHFS9N60A

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

-40

-0.75

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

V

DS/TJ

GS(th)

V

GSS

DSS

VGS = 10 V ID = 5.5 A

DS(on)

fs

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Input Resistance R

iss

- 180 -

oss

-7.1-

rss

oss

eff. VDS = 0 V to 480 V

oss

g

--13

gs

--20

gd

d(on)

r

-30-

d(off)

-22-

f

g

V

V

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p - n junction diode

TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

VGS = 0, ID = 250 μA 600 - - V

Reference to 25 °C, I

= 1 mA

D

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 600 V, VGS = 0 V - - 25

= 480 V, VGS = 0 V, TJ = 125 °C - - 250

V

DS

b

VDS = 25 V, ID = 3.1 A 5.5 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 1.0 V, f = 1.0 MHz - 1957 -

V

DS

GS

= 10 V

GS

= 0 V

V

= 480 V, f = 1.0 MHz - 49 -

DS

= 9.2 A, VDS = 400 V

I

D

see fig. 6 and 13

V

= 300 V, ID = 9.2 A

DD

R

= 9.1 , RD = 35.5

g

see fig. 10

b

c

b

f = 1 MHz, open drain 0.5 - 3.2 

TJ = 25 °C, IS = 9.2 A, VGS = 0 V

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 to 80 % VDS.

oss

Vishay Siliconix

°C/W

-0.66-

- - 0.75 

- 1400 -

-96-

--49

-13-

-25-

--9.2

--37

--1.5V

- 530 800 ns

-3.04.4μC

V/°C

μA

pF

nC Gate-Source Charge Q

ns

A

S16-0763-Rev. D, 02-May-16

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0.1

1

10

100

0.1 1 10 100

20µs PULSE WIDTH
T = 25 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.7V

1

10

100

1 10 100

20µs PULSE WIDTH
T = 150 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.7V

0.1

1

10

100

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V = 50V
20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J

°

T = 150 C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

r

DS(on)

, Drain-to-Source On Resistance

(Normalized)

J

°

V =

I =

GS

D

10V

9.2A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFS9N60A, SiHFS9N60A

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

S16-0763-Rev. D, 02-May-16

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Document Number: 91287

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0

400

800

1200

1600

2000

2400

1 10 100 1000

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C

GS
iss g s gd d s
rss gd
oss ds gd

iss

oss

rss

0 10 20 30 40 50

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

9.2A

V = 120V

DS

V = 300V

DS

V = 480V

DS

0.1

1

10

100

0.2 0.5 0.7 1.0 1.2

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

0.1

1

10

100

1000

10 100 1000 10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T T= 150 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

IRFS9N60A, SiHFS9N60A

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 1 - Maximum Safe Operating Area

S16-0763-Rev. D, 02-May-16

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 91287

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25 50 75 100 125 150

0.0

2.0

4.0

6.0

8.0

10.0

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

A

R

g

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

Driver

15 V

20 V

IRFS9N60A, SiHFS9N60A

Vishay Siliconix

Fig. 10a - Switching Time Test Circuit

Fig. 8 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

V

t

p

DS

I

S16-0763-Rev. D, 02-May-16

Fig. 12a - Unclamped Inductive Test Circuit

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5

AS

Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91287

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25 50 75 100 125 150

0

100

200

300

400

500

600

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

I

D

TOP

BOTTOM

4.1A

5.8A

9.2A

Q

GS

Q

GD

Q

G

V

G

Charge

10 V

IRFS9N60A, SiHFS9N60A

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

0.3 µF

D.U.T.

3 mA

I

G

Current sampling resistors

I

D

+

-

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

V

DS

S16-0763-Rev. D, 02-May-16

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Document Number: 91287

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IRFS9N60A, SiHFS9N60A

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance
current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.
controlled by duty factor “D”

• I

SD

• D.U.T. - device under test

Period

-

g

D =

P.W.

Period

+

+

V

DD

-

VGS = 10 V a

waveform

SD

Body diode forward

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

current

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. I

D.U.T. VDSwaveform

Inductor current

Note

a. V

Fig. 14 - For N-Channel











Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91287

S16-0763-Rev. D, 02-May-16

.

7

Document Number: 91287

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TO-263AB (HIGH VOLTAGE)

(Datum A)

34

E

L1

4

D

L2

4

C

1

B

B

C

3

2

B

B

Package Information

Vishay Siliconix

A

A

5

H

Detail A

B

A

c2

Gauge
plane

0° to 8°

L

L3

L4

Detail “A”
Rotated 90° CW
scale 8:1

H

B

Seating plane

A1

2 x e

Lead tip

2 x b2

2 x b

0.010 A B

MM

Plating

(c)

Section B - B and C - C

c

± 0.004 B

5

b1, b3

(b, b2)

Scale: none

M

Base
metal

c1

A

E

D1

4

5

E1

View A - A

4

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420

(10.668)

0.635
(16.129)

0.355

AN826

Vishay Siliconix

(9.017)

Return to Index

0.135

(3.429)

0.200

(5.080)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.257)

0.145

(3.683)

Document Number: 73397
11-Apr-05

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Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

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Revision: 13-Jun-16

1

Document Number: 91000