Datasheet IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 DataSheet (Vishay)

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S

G

D

P-Channel MOSFET

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) - 400

R

()V

DS(on)

Q

(Max.) (nC) 13

g

Q

(nC) 3.2

gs

Q

(nC) 5.0

gd

Configuration Single

= - 10 V 7.0

GS

FEATURES

•P-Channel

• Surface Mount (IRFR9310, SiHFR9310)

• Straight Lead (IRFU9310, SiHFU9310)

• Advanced Process Technology

• Fast Switching

• Fully Avalanche Rated

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

DPAK

(TO-252)

D

IPAK

(TO-251)

D

S

G

S

D

G

Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)

Lead (Pb)-free and
Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

SiHFR9310-GE3 SiHFR9310TRL-GE3 SiHFR9310TR-GE3 SiHFR9310TRR-GE3 SiHFU9310-GE3

IRFR9310PbF IRFR9310TRLPbF

SiHFR9310-E3 SiHFR9310TL-E3

a

IRFR9310TRPbFa IRFR9310TRRPbFa IRFU9310PbF

a

SiHFR9310T-E3

a

SiHFR9310TR-E3a SiHFU9310-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 1.1

T

C

DS

± 20

GS

I

D

IDM - 7.2

Linear Derating Factor 0.40

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

d

for 10 s 300

E

AS

I

AR

E

AR

D

dV/dt - 24

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

= 25 °C, L = 57 mH, Rg = 25 , IAS = - 1.8 A (see fig. 12).

J

 - 1.1 A, dI/dt  450 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

S13-0166-Rev. D, 04-Feb-13

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- 400

- 1.8

92

- 1.8

5.0

50

- 55 to + 150

Document Number: 91284

V

A

W/°C

mJ

A

mJ

W

V/ns

°C

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

D

G

S

D

G

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THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

- - 110

--50

--2.5

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.41 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 1.1 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

-50-

oss

-8.0-

rss

g

--3.2

gs

--5.0

gd

d(on)

r

d(off)

-24-

f

D

V

-25-

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

VGS = 0 V, ID = - 250 μA - 400 - - V

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 400 V, VGS = 0 V - - - 100

= - 320 V, VGS = 0 V, TJ = 125 °C - - - 500

V

DS

b

VDS = - 50 V, ID = - 1.1 A 0.91 - - S

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

= - 1.1 A, VDS = - 320 V,

I

= - 10 V

GS

V

R

= 21 , RD = 180 , see fig. 10

g

D

see fig. 6 and 13

= - 200 V, ID = - 1.1 A,

DD

c

b

b

Vishay Siliconix

°C/W

--7.0

- 270 -

--13

-11-

-10-

-4.5-

-7.5-

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = - 1.1 A, VGS = 0 V

b

TJ = 25 °C, IF = -1.1 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

--- 1.9

--- 7.6

--- 4.0V

- 170 260 ns

b

- 640 960 nC

A

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. This is applied for IPAK, L

S13-0166-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

of DPAK is measured between lead and center of die contact.

S

2

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 91284

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

10

1

TOP

BOTTOM

VGS

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

-4.5V

-4.5V

D

-I , Drain-to-Source Current (A)

20μs PULSE WIDTH

°

T = 25 C

0.1
1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig. 1 - Typical Output Characteristics

10

TOP

BOTTOM

VGS

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

-4.5V

10

°

T = 25 C

J

°

T = 150 C

J

1

D

-I , Drain-to-Source Current (A)

V = -50V

DS

0.1
4 5 6 7 8 9 10

-V , Gate-to-Source Voltage (V)

GS

20μs PULSE WI DTH

Fig. 3 - Typical Transfer Characteristics

2.5

2.0

I =

D

-1.8A

1

-4.5V

D

-I , Drain-to-Source Current (A)

20μs PULSE WIDTH

°

T = 150 C

0.1
1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig. 2 - Typical Output Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

V =

GS

°

-10V

Fig. 4 - Normalized On-Resistance vs. Temperature

S13-0166-Rev. D, 04-Feb-13

3

Document Number: 91284

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

Vishay Siliconix

500

400

300

200

C, Capacitance (pF)

100

0

1 10 100

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

I =

D

16

12

V

=

0V,
C

C
C

iss

oss

rss

f = 1MHz

+ C

+ C

C SHORTED

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

C

C

C

-V , Drain-to-Source Voltage (V)

DS

-1.1A

V = -320V

DS

V = -200V

DS

V = -80V

DS

10

°

T = 150 C

J

1

°

T = 25 C

J

SD

-I , Reverse Drain Current (A)

V = 0 V

0.1

1.0 2.0 3.0 4.0 5.0

-V ,Source-to-Drain Voltage (V)

SD

Fig. 7 - Typical Source-Drain Diode Forward Voltage

100

OPERATION IN THIS AREA LIMITED

10

BY R

DS(on)

GS

10us

8

1

D

-I , Drain Current (A)I , Drain Current (A)

4

GS

-V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

0

0 4 8 12 16

Q , Total Gate Charge (nC)

G

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

S13-0166-Rev. D, 04-Feb-13

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SEE FIGURE

For technical questions, contact: [e-mail]

13

0.1
10 100 1000

4

°

= 25 C

C

T T= 150 C
Single Pulse

°

J

-V , Drain-to-Source Voltage (V)

DS

Fig. 8 - Maximum Safe Operating Area

Document Number: 91284

100us

1ms

10ms

www.vishay.com

25 50 75 100 125 150

0.0

0.4

0.8

1.2

1.6

2.0

T , Case Temperature ( C)

-I , Drain Current (A)

°

C

D

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

- 10 V

+

-

V

DS

V

DD

V

GS

10 %

90 %

V

DS

t

d(on)

t

r

t

d(off)

t

f

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

Notes :

1. Dut y factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

Vishay Siliconix

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10b - Switching Time Waveforms

S13-0166-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Document Number: 91284

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I

AS

V

DS

t

p

25 50 75 100 125 150

0

50

100

150

200

250

300

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

I

D

TOP

BOTTOM

-0.49A

-0.7A

-1.1A

Q

GS

Q

GD

Q

G

V

G

Charge

- 10 V

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

Vishay Siliconix

L

D.U.T.

I

AS

0.01 Ω

p

Driver

+-V

15 V

R

V

g

- 20 V

DS

t

Fig. 12a - Unclamped Inductive Test Circuit

A

DD

Fig. 12b - Unclamped Inductive Waveforms

S13-0166-Rev. D, 04-Feb-13

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

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Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

0.2 µF

12 V

V

GS

- 3 mA

Current sampling resistors

6

For technical questions, contact: [e-mail]

50 kΩ

0.3 µF

-

V

+

D.U.T.

I

G

I

DS

D

Document Number: 91284

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

P.W.

Period

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Body diode forward

current

Driver gate drive

Inductor current

D =

P.W.

Period

+

-

-

-

-

+

+

+

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

g

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

• Compliment N-Channel of D.U.T. for driver

V

DD

• I

SD

controlled by duty factor “D”

Note

Note

a. V

GS

= - 5 V for logic level and - 3 V drive devices

V

GS

= - 10 V

a

D.U.T. lSD waveform

D.U.T. V

DS

waveform

V

DD

Re-applied
voltage

Ripple ≤ 5 %

I

SD

Reverse
recovery
current

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Vishay Siliconix

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91284

S13-0166-Rev. D, 04-Feb-13

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.

7

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Document Number: 91284

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Package Information

Vishay Siliconix

TO-252AA Case Outline

E

b3

L3

A

C2

DIM. MIN. MAX. MIN. MAX.

MILLIMETERS INCHES

A 2.18 2.38 0.086 0.094

A1 - 0.127 - 0.005

b 0.64 0.88 0.025 0.035

D

H

b2 0.76 1.14 0.030 0.045

b3 4.95 5.46 0.195 0.215

C 0.46 0.61 0.018 0.024

C2 0.46 0.89 0.018 0.035

L4

L5

L

D 5.97 6.22 0.235 0.245

D1 4.10 - 0.161 -

E 6.35 6.73 0.250 0.265

b

e1

b2

e

C

A1

E1 4.32 - 0.170 -

H 9.40 10.41 0.370 0.410

e 2.28 BSC 0.090 BSC

e1 4.56 BSC 0.180 BSC

gage plane height (0.5 mm)

L 1.40 1.78 0.055 0.070

L3 0.89 1.27 0.035 0.050

D1

L4 - 1.02 - 0.040

L5 1.01 1.52 0.040 0.060

ECN: T16-0236-Rev. P, 16-May-16

E1

DWG: 5347

Notes

• Dimension L3 is for reference only.

Revision: 16-May-16

1

Document Number: 71197

For technical questions, contact: [e-mail]

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TO-251AA (HIGH VOLTAGE)

Package Information

Vishay Siliconix

4

E1

View A - A

Thermal PAD

D1

4

(Datum A)

3

E

b4

θ2

5

C

L3

L1

B

B

2 x e

Lead tip

A

4

L2

D

C

L

3 x b2

3 x b

0.010 C BMA

0.010 BA

B

3

M

0.25

C

4

0.25

Plating

(c)

Section B - B and C - C

5

b1, b3

(b, b2)

Base
metal

c1

A

c2

θ1

5

A

C

Seating
plane

A

A1

c

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -

A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265

b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -

b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC

b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380

b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090

b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050

c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060

c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15'

c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35'

D 5.97 6.22 0.235 0.245

ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension are shown in inches and millimeters.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.

5. Lead dimension uncontrolled in L3.

6. Dimension b1, b3 and c1 apply to base metal only.

7. Outline conforms to JEDEC outline TO-251AA.

Document Number: 91362 www.vishay.com
Revision: 15-Sep-08 1

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

Application Note 826

Vishay Siliconix

0.243
(6.180)

Return to Index

Return to Index

0.420
(10.668)

0.180

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.087

0.090

0.055

(1.397)

(2.202)

(2.286)

APPLICATION NOTE

Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Document Number: 91000