Datasheet IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 DataSheet (Vishay)

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S

G

D

P-Channel MOSFET

DPAK

(TO-252)

IPAK

(TO-251)

G

D

S

S

D

G

D

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) - 50

R

()V

DS(on)

Q

(Max.) (nC) 14

g

Q

(nC) 6.5

gs

Q

(nC) 6.5

gd

Configuration Single

= - 10 V 0.28

GS

FEATURES

• Surface Mountable (Order As IRFR9020,
SiHFR9020)

• Straight Lead Option (Order As IRFU9020,
SiHFU9020)

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

• Simple Drive Requirements

• Ease of Paralleling

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt.
The power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of power
MOSFET’s to high volume applications where PC board
surface mounting is desirable. The surface mount option
IRFR9020, SiHFR9020 is provided on 16mm tape. The
straight lead option IRFU9020, SiHFU9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9020-GE3 SiHFR9020TR-GE3

Lead (Pb)-free

IRFR9020PbF IRFR9020TRPbF
SiHFR9020-E3 SiHFR9020T-E3

Note

a. See device orientation.

a

a

a

SiHFR9020TRL-GE3aSiHFU9020-GE3
IRFR9020TRLPbF
SiHFR9020TL-E3

a

a

IRFU9020PbF
SiHFU9020-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 6.3

C

DS

± 20

GS

I

D

IDM - 40
Linear Derating Factor 0.33 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

b

a

a

= 25 °C P

c

d

C

for 10 s 300

E

AS

I

AR

E

AR

D

dV/dt 5.8 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).

= - 25 V, Starting TJ = 25 °C, L = 5.1 mH, Rg = 25 , Peak IL = - 9.9 A

b. V

DD

c. I

 - 9.9 A, dI/dt  -120 A/μs, VDD  40 V, TJ  150 °C.

SD

d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0169-Rev. D, 04-Feb-13

1

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

- 50

- 9.9

250 mJ

- 9.9 A

4.2 mJ
42 W

- 55 to + 150

Document Number: 90350

V

AT

°C

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

D

S

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

- - 110

-1.7-

--3.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

DS

GS(th)

V

GSS

DSS

DS(on)

fs

iss

oss

rss

g

gs

gd

d(on)

r

d(off)

-2538

f

D

S

VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C

VGS = - 10 V ID = 5.7 A

-320-

-70-

-4.36.5

V

-4.36.5

-1218

VGS = 0 V, ID = - 250 μA - 50 - - V

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 500 nA

GS

VDS = max. rating, VGS = 0 V - - 250

b

VDS  - 50 V, IDS = - 5.7 A 2.3 3.5 - S

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 9

= - 9.7 A, VDS = 0.8 x max.

I

D

= - 10 V

GS

rating, see fig. 18

(Independent operating

temperature)

= - 25 V, ID = - 9.7 A,

V

DD

R

= 18 , RD = 2.4 , see fig. 17

g

(Independent operating temperature)

Between lead,
6 mm (0.25") from
package and center of
die contact.

Vishay Siliconix

°C/WCase-to-Sink R

- - 1000

- 0.20 0.28 

-490-

-9.414

-8.212

-5766

-4.5-

-7.5-

μA

pFOutput Capacitance C

nC

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = - 9.9 A, VGS = 0 V

b

TJ = 25 °C, IF = - 9,7 A, dI/dt = 100 A/μs

--- 9.9

--- 40

--- 6.3V

56 110 280 ns

b

0.17 0.34 0.85 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

A

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).
b. Pulse width  300 μs; duty cycle  2 %.

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S13-0169-Rev. D, 04-Feb-13

2

Document Number: 90350

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics

Fig. 4 - Maximum Safe Operating Area

Fig. 5 - Typical Transconductance vs. Drain Current

Fig. 3 - Typical Saturation Characteristics

S13-0169-Rev. D, 04-Feb-13

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Fig. 6 - Typical Source-Drain Diode Forward Voltage

Document Number: 90350

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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Fig. 7 - Breakdown Voltage vs. Temperature

Fig. 8 - Normalized On-Resistance vs. Temperature

Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage

S13-0169-Rev. D, 04-Feb-13

For technical questions, contact: [e-mail]

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 90350

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I

AS

V

DS

V

DD

V

DS

t

p

I

L

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Fig. 11 - Typical On-Resistance vs. Drain Current

Fig. 12 - Maximum Drain Current vs. Case Temperature

Fig. 13 - Maximum Avalanche vs. Starting Junction

Temperature

Fig. 14 - Unclamped Inductive Test Circuit

Fig. 15 - Unclamped Inductive Waveforms

S13-0169-Rev. D, 04-Feb-13

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For technical questions, contact: [e-mail]

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Document Number: 90350

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

V

GS

10 %

90 %

V

DS

t

d(on)

t

r

t

d(off)

t

f

Q

GS

Q

GD

Q

G

V

G

Charge

- 10 V

www.vishay.com

Fig. 16 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

Vishay Siliconix

Fig. 17 - Switching Time Waveforms

Fig. 19 - Basic Gate Charge Waveform

Fig. 18 - Switching Time Test Circuit

S13-0169-Rev. D, 04-Feb-13

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For technical questions, contact: [e-mail]

Fig. 20 - Gate Charge Test Circuit

Document Number: 90350

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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

P.W.

Period

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Body diode forward

current

Driver gate drive

Inductor current

D =

P.W.

Period

+

-

-

-

-

+

+

+

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

g

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

• Compliment N-Channel of D.U.T. for driver

V

DD

• I

SD

controlled by duty factor “D”

Note

Note

a. V

GS

= - 5 V for logic level and - 3 V drive devices

V

GS

= - 10 V

a

D.U.T. lSD waveform

D.U.T. V

DS

waveform

V

DD

Re-applied
voltage

Ripple ≤ 5 %

I

SD

Reverse
recovery
current

www.vishay.com

Vishay Siliconix

Fig. 21 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90350

S13-0169-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

.

7

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 90350

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Package Information

Vishay Siliconix

TO-252AA Case Outline

E

b3

L3

A

C2

DIM. MIN. MAX. MIN. MAX.

MILLIMETERS INCHES

A 2.18 2.38 0.086 0.094

A1 - 0.127 - 0.005

b 0.64 0.88 0.025 0.035

D

H

b2 0.76 1.14 0.030 0.045

b3 4.95 5.46 0.195 0.215

C 0.46 0.61 0.018 0.024

C2 0.46 0.89 0.018 0.035

L4

L5

L

D 5.97 6.22 0.235 0.245

D1 4.10 - 0.161 -

E 6.35 6.73 0.250 0.265

b

e1

b2

e

C

A1

E1 4.32 - 0.170 -

H 9.40 10.41 0.370 0.410

e 2.28 BSC 0.090 BSC

e1 4.56 BSC 0.180 BSC

gage plane height (0.5 mm)

L 1.40 1.78 0.055 0.070

L3 0.89 1.27 0.035 0.050

D1

L4 - 1.02 - 0.040

L5 1.01 1.52 0.040 0.060

ECN: T16-0236-Rev. P, 16-May-16

E1

DWG: 5347

Notes

• Dimension L3 is for reference only.

Revision: 16-May-16

1

Document Number: 71197

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-251AA (HIGH VOLTAGE)

Package Information

Vishay Siliconix

4

E1

View A - A

Thermal PAD

D1

4

(Datum A)

3

E

b4

θ2

5

C

L3

L1

B

B

2 x e

Lead tip

A

4

L2

D

C

L

3 x b2

3 x b

0.010 C BMA

0.010 BA

B

3

M

0.25

C

4

0.25

Plating

(c)

Section B - B and C - C

5

b1, b3

(b, b2)

Base
metal

c1

A

c2

θ1

5

A

C

Seating
plane

A

A1

c

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -

A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265

b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -

b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC

b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380

b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090

b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050

c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060

c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15'

c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35'

D 5.97 6.22 0.235 0.245

ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension are shown in inches and millimeters.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.

5. Lead dimension uncontrolled in L3.

6. Dimension b1, b3 and c1 apply to base metal only.

7. Outline conforms to JEDEC outline TO-251AA.

Document Number: 91362 www.vishay.com
Revision: 15-Sep-08 1

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

Application Note 826

Vishay Siliconix

0.243
(6.180)

Return to Index

Return to Index

0.420
(10.668)

0.180

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.087

0.090

0.055

(1.397)

(2.202)

(2.286)

APPLICATION NOTE

Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3

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

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16

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Document Number: 91000