Datasheet IRFR430A, IRFU430A, SiHFR430A, SiHFU430A DataSheet (Vishay)

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N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

G

D

S

S

D

G

D

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 500

R

()V

DS(on)

Q

(Max.) (nC) 24

g

Q

(nC) 6.5

gs

Q

(nC) 13

gd

Configuration Single

= 10 V 1.7

GS

FEATURES

• Low Gate Charge Qg Results in Simple Drive
Requirement

• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness

• Fully Characterized Capacitance and
Avalanche Voltage and Current

• Effective C

Specified

oss

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)

Lead (Pb)-free and
Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

SiHFR430A-GE3 SiHFR430ATR-GE3

IRFR430APbF IRFR430ATRPbF

SiHFR430A-E3 SiHFR430AT-E3

a

SiHFR430ATRL-GE3aSiHFR430ATRR-GE3aSiHFU430A-GE3

a

IRFR430ATRLPbF

a

SiHFR430ATL-E3

a

IRFR430ATRRPbF

a

SiHFR430ATR-E3

a

a

IRFU430APbF

SiHFU430A-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 3.2

C

DS

± 30

GS

I

D

IDM 20

Linear Derating Factor 0.91 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

b

a

a

= 25 °C P

c

d

C

for 10 s 300

E

AS

I

AR

E

AR

D

dV/dt 3.0 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

= 25 °C, L = 11 mH, Rg = 25 , IAS = 5.0 A (see fig. 12).

J

 5.0 A, dI/dt  320 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

S12-0168-Rev. D, 04-Feb-13

1

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500

5.0

130 mJ

5.0 A

11 mJ

110 W

- 55 to + 150

Document Number: 91276

V

AT

°C

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Case-to-Sink, Flat, Greased Surface

Maximum Junction-to-Case (Drain)

thJA

R

thCS

R

thJC

-62

0.50 -

-1.1

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 3.0 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

-75-

oss

-4.5-

rss

oss

eff. VDS = 0 V to 400 V

oss

g

--6.5

gs

--13

gd

d(on)

r

-17-

d(off)

-16-

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.5 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

VDS = 50 V, ID = 3.0 A 2.3 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 1.0 V, f = 1.0 MHz - 750 -

V

DS

V

= 10 V

GS

V

= 10 V

GS

V

DD

R

= 15 , RD = 50 , see fig. 10

g

TJ = 25 °C, IS = 5.0 A, VGS = 0 V

= 400 V, f = 1.0 MHz - 25 -

DS

c

= 5.0 A, VDS = 400 V,

I

D

see fig. 6 and 13

= 250 V, ID = 5.0 A,

b

b

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 to 80 % VDS.

oss

Vishay Siliconix

°C/W

--1.7

- 490 -

-51-

--24

-8.7-

-27-

--5.0

--20

--1.5V

- 410 620 ns

-1.42.1μC

μA

pFOutput Capacitance C

pFV

nC Gate-Source Charge Q

ns

A

S12-0168-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91276

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.001

0.01

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

A

)

4.5V

20μs PULSE WIDTH
Tj = 25°C

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

A

)

4.5V

20μs PULSE WIDTH
Tj = 150°C

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

4.0 6.0 8.0 10.0 12.0 14.0 16.0

VGS, Gate-to-Source Voltage (V)

0.01

0.10

1.00

10.00

100.00

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

Α

)

TJ= 25°C

TJ= 150°C

VDS= 100V

20μs PULSE WIDTH

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

S12-0168-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Transfer Characteristics

3.0

I =

D

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

Fig. 4 - Normalized On-Resistance vs. Temperature

3

For technical questions, contact: [e-mail]

5.0A

T , Junction Temperature ( C)

J

Document Number: 91276

V =

GS

°

10V

www.vishay.com

0 4 8 12 16 20

0

2

5

7

10

12

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

I =

D

5.0A

V = 100V

DS

V = 250V

DS

V = 400V

DS

10 100 1000 10000

VDS, Drain-toSource Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

A

)

Tc = 25°C
Tj = 150°C
Single Pulse

1msec

10msec

OPERATION IN THIS AREA
LIMITED BY RDS(on)

100μsec

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

Vishay Siliconix

10000

1000

)
F
p

(
e
c
n
a

t

i

100

c
a
p
a

C
,

C

10

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

ds

+ C

oss

Ciss

Coss

+ Cgd, C

gd

SHORTED

ds

Crss

1

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

100

10

°

°

T = 150 C

J

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.5 0.8 1.1 1.4

V ,Source-to-Drain Voltage (V)

SD

T = 25 C

J

V = 0 V

GS

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

S12-0168-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 8 - Maximum Safe Operating Area

4

For technical questions, contact: [e-mail]

Document Number: 91276

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

www.vishay.com

5.5

4.4

3.3

Vishay Siliconix

2.2

D

I , Drain Current (A)

1.1

0.0
25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 9 - Maximum Drain Current vs. Case Temperature

10

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

thJC

1

D = 0.50

0.20

P

0.10

0.1

0.05

0.02

Thermal Response (Z )

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJC C

DM

1 2

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

t

1

t

2

Fig. 12a - Unclamped Inductive Test Circuit

S12-0168-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

R

V

g

20 V

15 V

DS

L

D.U.T

I

AS

0.01 Ω

t

p

Driver

+

V

A

DD

-

I

AS

Fig. 12b - Unclamped Inductive Waveforms

5

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V

DS

t

p

Document Number: 91276

www.vishay.com

Q

GS

Q

GD

Q

G

V

G

Charge

V

GS

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

Vishay Siliconix

250

TOP

200

150

100

50

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting Tj, Junction Temperature ( C)

BOTTOM

I

D

2.2A

3.2A

5.0A

°

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

5.0

)
V

(

4.5

e
g
a

t

l
o
V

d

l

4.0

o
h
s
e

r
h

t

3.5

e

t
a

G

)
h

t

(

3.0

S
G

V

2.5

-75 -50 -25 0 25 50 75 100 125 150

ID= 250μA

TJ , Temperature ( °C )

Fig. 12d - Threshold Voltage vs. Temperature

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

0.3 µF

D.U.T.

+

V

DS

-

V

GS

3 mA

I

G

Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

S12-0168-Rev. D, 04-Feb-13

6

For technical questions, contact: [e-mail]

Fig. 13b - Gate Charge Test Circuit

I

D

Document Number: 91276

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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

www.vishay.com

Vishay Siliconix

Fig. 14 - For N-Channel

.

For technical questions, contact: [e-mail]

7

Document Number: 91276

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91276

S12-0168-Rev. D, 04-Feb-13

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

Package Information

Vishay Siliconix

TO-252AA Case Outline

E

b3

L3

A

C2

DIM. MIN. MAX. MIN. MAX.

MILLIMETERS INCHES

A 2.18 2.38 0.086 0.094

A1 - 0.127 - 0.005

b 0.64 0.88 0.025 0.035

D

H

b2 0.76 1.14 0.030 0.045

b3 4.95 5.46 0.195 0.215

C 0.46 0.61 0.018 0.024

C2 0.46 0.89 0.018 0.035

L4

L5

L

D 5.97 6.22 0.235 0.245

D1 4.10 - 0.161 -

E 6.35 6.73 0.250 0.265

b

e1

b2

e

C

A1

E1 4.32 - 0.170 -

H 9.40 10.41 0.370 0.410

e 2.28 BSC 0.090 BSC

e1 4.56 BSC 0.180 BSC

gage plane height (0.5 mm)

L 1.40 1.78 0.055 0.070

L3 0.89 1.27 0.035 0.050

D1

L4 - 1.02 - 0.040

L5 1.01 1.52 0.040 0.060

ECN: T16-0236-Rev. P, 16-May-16

E1

DWG: 5347

Notes

• Dimension L3 is for reference only.

Revision: 16-May-16

1

Document Number: 71197

For technical questions, contact: [e-mail]

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-251AA (HIGH VOLTAGE)

Package Information

Vishay Siliconix

4

E1

View A - A

Thermal PAD

D1

4

(Datum A)

3

E

b4

θ2

5

C

L3

L1

B

B

2 x e

Lead tip

A

4

L2

D

C

L

3 x b2

3 x b

0.010 C BMA

0.010 BA

B

3

M

0.25

C

4

0.25

Plating

(c)

Section B - B and C - C

5

b1, b3

(b, b2)

Base
metal

c1

A

c2

θ1

5

A

C

Seating
plane

A

A1

c

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -

A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265

b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -

b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC

b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380

b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090

b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050

c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060

c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15'

c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35'

D 5.97 6.22 0.235 0.245

ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension are shown in inches and millimeters.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.

5. Lead dimension uncontrolled in L3.

6. Dimension b1, b3 and c1 apply to base metal only.

7. Outline conforms to JEDEC outline TO-251AA.

Document Number: 91362 www.vishay.com
Revision: 15-Sep-08 1

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

Application Note 826

Vishay Siliconix

0.243
(6.180)

Return to Index

Return to Index

0.420
(10.668)

0.180

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.087

0.090

0.055

(1.397)

(2.202)

(2.286)

APPLICATION NOTE

Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3

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

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.

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Revision: 13-Jun-16

1

Document Number: 91000