Page 1
IRFPS38N60L, SiHFPS38N60L
N-Channel MOSFET
G
D
S
Super-247
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
()V
R
DS(on)
Q
(Max.) (nC) 320
g
Q
(nC) 85
gs
Q
(nC) 160
gd
Configuration Single
= 10 V 0.12
GS
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simple Drive
Requirements
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uniterruptible Power Supplies
• Motor Control applications
ORDERING INFORMATION
Package Super-247
Lead (Pb)-free
SnPb
IRFPS38N60LPbF
SiHFPS38N60L-E3
IRFPS38N60L
SiHFPS38N60L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 24
C
DS
± 30
GS
I
D
IDM 150
Linear Derating Factor 4.3 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 19 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 0.91 mH, Rg = 25 , IAS = 38 A, dV/dt = 13 V/ns (see fig. 14a).
J
38 A, dI/dt 630 A/μs, VDD VDS, TJ 150 °C.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91259 www.vishay.com
S11-0111-Rev. B, 07-Feb-11 1
600
38
680 mJ
38 A
54 mJ
540 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
V
AT
°C
Page 2
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Case-to-Sink, Flat, Greased Surface R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 410 - mV/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Effective Output Capacitance C
Effective Output Capacitance
(Energy Related)
Total Gate Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Reverse Recovery Time I
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
C
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
www.vishay.com Document Number: 91259
2 S11-0111-Rev. B, 07-Feb-11
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 23 A
DS(on)
fs
iss
- 740 -
oss
-72-
rss
eff.
oss
C
eff. (ER) - 260 -
oss
g
--85
gs
- - 160
gd
G
d(on)
r
-92-
d(off)
-69-
f
S
I
SM
SD
rr
rr
RRM
on
V
V
GS
MOSFET symbol
showing the
integral reverse
p - n junction diode
-40
0.24 -
°C/W
-0.22
VGS = 0 V, ID = 250 μA 600 - - V
VDS = VGS, ID = 250 μA 3.0 - 5.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 50 μA
= 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA
DS
VDS = 50 V, ID = 23 A
VGS = 0 V,
V
DS
= 25 V,
b
b
- 0.12 0.15
20 - - S
- 7990 -
f = 1.0 MHz, see fig. 5
V
= 0 V
GS
V
= 0 V to 480 V
DS
c
- 350 -
- - 320
= 38 A, VDS = 480 V
I
= 10 V
D
see fig. 7 and 15
b
f = 1 MHz, open drain - 1.2 -
= 300 V, ID = 38 A,
V
DD
-44-
- 130 -
RG = 4.3 , VGS = 10 V,
see fig. 11a and 11b
TJ = 25 °C, IS = 38 A, VGS = 0 V
TJ = 25 °C, IF = 38 A
T
= 125 °C, dI/dt = 100 A/μs
J
TJ = 25 °C, IF = 38 A, VGS = 0 V
T
= 125 °C, dI/dt = 100 A/μs
J
b
D
G
S
b
--38
- - 150
--1.5V
- 170 250
b
b
b
- 420 630
- 830 1240
- 2600 3900
TJ = 25 °C - 9.1 14 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising form 0 % to 80 % VDS.
oss
while VDS is rising from 0 % to 80 % VDS.
oss
pF
nC Gate-Source Charge Q
ns
A
ns
nC
Page 3
IRFPS38N60L, SiHFPS38N60L
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID= 38A
V
GS
= 10V
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
1000
)
Α
100
(
t
n
e
r
r
u
C
10
e
c
r
u
o
S
-
1
o
t
n
i
a
r
D
,
0.1
D
I
0.01
TJ= 25°C
4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
TJ= 150°C
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91259 www.vishay.com
S11-0111-Rev. B, 07-Feb-11 3
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Page 4
IRFPS38N60L, SiHFPS38N60L
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
C
iss
= C
gs
+ Cgd, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 100 200 300 400 500 600 700
V
DS,
Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
35
40
45
50
E
n
e
r
g
y
(
µ
J
)
0 50 100 150 200 250
QGTotal Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 480V
VDS= 300V
VDS= 120V
ID= 38A
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Output Capacitance Stored Energy vs. V
www.vishay.com Document Number: 91259
4 S11-0111-Rev. B, 07-Feb-11
DS
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
)
A
(
t
100.00
n
e
r
r
u
C
n
i
a
r
D
e
s
r
e
v
e
R
,
D
S
I
10.00
1.00
TJ= 150°C
TJ= 25°C
V
GS
= 0V
0.10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Page 5
Fig. 9 - Maximum Safe Operating Area
1 10 100 1000 10000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
Tc = 25°C
Tj = 150°C
Single Pulse
25 50 75 100 125 150
TC, Case Temperature (°C)
0
5
10
15
20
25
30
35
40
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
R
D.U.T.
D
+
V
-
DD
V
DS
V
GS
R
G
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 11a - Switching Time Test Circuit
Fig. 10 - Maximum Drain Current vs. Case Temperature
Document Number: 91259 www.vishay.com
S11-0111-Rev. B, 07-Feb-11 5
Fig. 11b - Switching Time Waveforms
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRFPS38N60L, SiHFPS38N60L
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID= 250µA
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 17A
24A
BOTTOM38A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
Driver
A
15 V
20 V
I
AS
V
DS
t
p
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
Fig. 13 - Threshold Voltage vs. Temperature
Fig. 14c - Unclamped Inductive Waveforms
Fig. 15a - Basic Gate Charge Waveform
Q
V
GS
Q
GS
V
G
G
Q
GD
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
Charge
Fig. 15b - Gate Charge Test Circuit
Fig. 14b - Unclamped Inductive Test Circuit
www.vishay.com Document Number: 91259
6 S11-0111-Rev. B, 07-Feb-11
Page 7
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 Va
I
SD
Driver gate drive
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
•
I
SD
controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
Note
a. V
GS
= 5 V for logic level devices
V
DD
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91259
Document Number: 91259 www.vishay.com
S11-0111-Rev. B, 07-Feb-11 7
.
Fig. 16 - For N-Channel
Page 8
TO-274AA (HIGH VOLTAGE)
B
E4
E
R
Package Information
Vishay Siliconix
A
A
A1
E1
D2
D
L1
L
e
10°
5°
Detail “A”
b
0.10 (0.25)
Lead Tip
MM
B A
C
A2
b2
Detail “A”
Scale: 2:1
b4
D1
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.70 5.30 0.185 0.209 D1 15.50 16.10 0.610 0.634
A1 1.50 2.50 0.059 0.098 D2 0.70 1.30 0.028 0.051
A2 2.25 2.65 0.089 0.104 E 15.10 16.10 0.594 0.634
b 1.30 1.60 0.051 0.063 E1 13.30 13.90 0.524 0.547
b2 1.80 2.20 0.071 0.087 e 5.45 BSC 0.215 BSC
b4 3.00 3.25 0.118 0.128 L 13.70 14.70 0.539 0.579
c 0.80 1.20 0.031 0.047 L1 1.00 1.60 0.039 0.063
D 19.80 20.80 0.780 0.819 R 2.00 3.00 0.079 0.118
ECN: S-82247-Rev. A, 06-Oct-08
DWG: 5975
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outer extremes of the plastic body.
3. Outline conforms to JEDEC outline to TO-274AA.
Document Number: 91365 www.vishay.com
Revision: 06-Oct-08 1
Page 9
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16
1
Document Number: 91000
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