Datasheet IRFP460, SiHFP460 DataSheet (Vishay)

Power MOSFET

IRFP460, SiHFP460

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

(Ω)V

DS(on)

Q

(Max.) (nC) 210

g

Q

(nC) 29

gs

Q

(nC) 110

gd

Configuration Single

TO-247

= 10 V 0.27

GS

D

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

G

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

S

D

G

N-Channel MOSFET

S

The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.

ORDERING INFORMATION

Package TO-247

Lead (Pb)-free

SnPb

IRFP460PbF
SiHFP460-E3
IRFP460
SiHFP460

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 13

C

DS

± 20

GS

I

D

IDM 80
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).

DD

c. I

≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91237 www.vishay.com
S-81360-Rev. A, 28-Jul-08 1

500

20

960 mJ

20 A
28 mJ

280 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFP460, SiHFP460

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

- 870 -

oss

- 350 -

rss

g

--29

gs

- - 110

gd

d(on)

r

- 110 -

d(off)

-58-

f

D

V

V

R

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the

integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IF = 20A, dI/dt = 100 A/µs

-40

0.24 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.45

VGS = 0 V, ID = 250 µA 500 - -

VDS = VGS, ID = 250 µA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 12 A

GS

VDS = 50 V, ID = 12 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--0.27Ω

13 - - S

- 4200 -

- - 210

= 20 A, VDS = 400 V

I

= 10 V

GS

D

see fig. 6 and 13

b

-18-

V

= 250 V, ID = 20 A ,

DD

= 4.3 Ω, RD = 13 Ω, see fig. 10

G

G

G

TJ = 25 °C, IS = 20 A, VGS = 0 V

b

D

S

D

S

b

-59-

-5.0-

-13-

--20

--80

--1.8V

- 570 860 ns

b

-5.78.6µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

µA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91237
2 S-81360-Rev. A, 28-Jul-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

V

GS

To p

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom

4.5 V

0

10

VDS, Drain-to-Source Voltage (V)

20 µs Pulse Width
T

= 25 °C

C

1

10

4.5 V

, Drain Current (A)

D

I

91237_03

, Drain Current (A)

D

I

91237_01

1

10

0

10

IRFP460, SiHFP460

Vishay Siliconix

150 °C

1

10

25 °C

0

10

4

5678 910

V

Gate-to-Source Voltage (V)

,

GS

20 µs Pulse Width

V

= 50 V

DS

Fig. 1 - Typical Output Characteristics, TC = 25 °C

V

15 V

GS

To p

10 V

8.0 V

7.0 V

6.0 V

Bottom

5.5 V

5.0 V

4.5 V

10

, Drain Current (A)

D

I

1

20 µs Pulse Width
T

= 150 °C

C

1

10

91237_02

0

10

0

10

V

Drain-to-Source Voltage (V)

,

DS

Fig. 2 - Typical Output Characteristics, T

4.5 V

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

3.5

I

= 20 A

D

V

= 10 V

GS

3.0

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

91237_04

T

Junction Temperature (°C)

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91237 www.vishay.com
S-81360-Rev. A, 28-Jul-08 3

IRFP460, SiHFP460

Vishay Siliconix

10 000

8000

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

2

10

gd

6000

C

iss

4000

Capacitance (pF)

2000

0

0

10

91237_05

V

Drain-to-Source Voltage (V)

,

DS

C

oss

C

rss

1

10

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

ID = 20 A

V

= 400 V

= 250 V

DS

For test circuit
see figure 13

160120

200

, Gate-to-Source Voltage (V)

GS

V

91237_06

16

V

DS

12

V

DS

= 100 V

8

4

0

0

40

80

QG, Total Gate Charge (nC)

150 °C

, Reverse Drain Current (A)

SD

I

91237_07

1

10

0.6 1.21.00.8

25 °C

V

1.6

1.4

VSD, Source-to-Drain Voltage (V)

GS

Fig. 7 - Typical Source-Drain Diode Forward Voltage

3

, Drain Current (A)

D

I

91237_08

10

5

2

2

10

5

2

10

5

2

1

1

Operation in this area limited

by R

DS(on)

TC = 25 °C

= 150 °C

T

J

25 25 25

Single Pulse

10

2

10

VDS, Drain-to-Source Voltage (V)

= 0 V

1.8 2.0

10 µs

100 µs

1 ms

10 ms

10

3

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91237
4 S-81360-Rev. A, 28-Jul-08

20

L

16

12

8

, Drain Current (A)

D

I

4

0

25 1501251007550

91237_09

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFP460, SiHFP460

Vishay Siliconix

R

D.U.T.

D

+

-

t

t

d(off)

f

V

DS

V

GS

R

G

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V

DS

90 %

10 %

V

GS

t

t

d(on)

r

Fig. 10b - Switching Time Waveforms

V

DD

1

)

thJC

Thermal Response (Z

91237_11

0 - 0.5

0.1

0.2

0.1
P

0.05

0.02

-2

0.01

10

Single Pulse
(Thermal Response)

Notes:

1. Duty Factor, D = t

-3

10

-5

10

-4

10

-3

10

-2

10

0.1 1 10

2. Peak Tj = PDM x Z

DM

t

1

t

2

1/t2

+ T

thJC

C

t1, Rectangular Pulse Duration (S)

Fig. 11a - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Vary tp to obtain
required I

AS

R

G

10 V

V

DS

t

p

D.U.T

I

AS

+

V

DD

-

A

V

DS

t

p

0.01 Ω

I

AS

V

DS

V

DD

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91237 www.vishay.com
S-81360-Rev. A, 28-Jul-08 5

IRFP460, SiHFP460

Vishay Siliconix

10 V

2400

To p

2000

Bottom

I

D

8.9 A
13 A
20 A

1600

1200

800

, Single Pulse Energy (mJ)

400

AS

E

91237_12c

VDD = 50 V

0

25 150

50

Starting T

, Junction Temperature (°C)

J

10075

125

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

G

Q

GS

Q

GD

V

G

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

0.3 µF

D.U.T.

3 mA

I

G

Current sampling resistors

I

D

+

V

DS

-

Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91237
6 S-81360-Rev. A, 28-Jul-08

IRFP460, SiHFP460

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix

D.U.T.

+

-

R

G

Driver gate drive

P.W.

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by duty factor "D"

SD

• D.U.T. - device under test

Period

-

D =

G

P.W.

Period

+

+

V

DD

-

= 10 V*

V

GS

waveform

SD

Body diode forward

current

waveform

DS

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Diode recovery

Body diode forward drop

dV/dt

dI/dt

V

DD

I

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. I

D.U.T. V

Inductor current

* V

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91237.

Document Number: 91237 www.vishay.com
S-81360-Rev. A, 28-Jul-08 7

www.vishay.com

0.10 AC

M M

E

E/2

(2)

(4)

R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

L1

1

2

3

Q

D

A

A2

A

A

A1

C

Ø k BD

M M

A

ØP

(Datum B)

ØP1

D1

4

E1

0.01 BD

M M

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

4

3

5

7

4

4

4

Lead Assignments

1. Gate

2. Drain

3. Source

4. Drain

Package Information

Vishay Siliconix

TO-247AC (High Voltage)

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625
A2 1.17 2.49 0.046 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010
b2 1.53 2.39 0.060 0.094 L 14.20 16.25 0.559 0.640
b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169
b4 2.42 3.43 0.095 0.135 N 7.62 BSC 0.300 BSC
b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.144

c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216

D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC

ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Contour of slot optional.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions D1 and E1.

5. Lead finish uncontrolled in L1.

6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").

7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.

8. Xian and Mingxin actually photo.

Revision: 01-Jul-13

Document Number: 91360

1

For technical questions, contact: [e-mail]

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 13-Jun-16

1

Document Number: 91000