Datasheet IRFP26N60L, SiHFP26N60L DataSheet (Vishay)

www.vishay.com

TO-247AC

G

D

S

IRFP26N60L, SiHFP26N60L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 600

R

(Ω)V

DS(on)

Q

(Max.) (nC) 180

g

Q

(nC) 61

gs

Q

(nC) 85

gd

Configuration Single

= 10 V 0.21

GS

D

FEATURES

• Superfast body diode eliminates the need for
external diodes in ZVS applications

• Lower gate charge results in simpler drive
requirements

• Enhanced dV/dt capabilities offer improved ruggedness

• Higher gate voltage threshold offers improved noise
immunity

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are

G

RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

S

N-Channel MOSFET

APPLICATIONS

• Zero voltage switching (SMPS)

• Telecom and server power supplies

• Uninterruptible power supplies

• Motor control applications

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SnPb

IRFP26N60LPbF

SiHFP26N60L-E3

IRFP26N60L

SiHFP26N60L

Available

Available

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 17

C

DS

± 30

GS

I

D

IDM 100

Linear Derating Factor 3.8 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

b

a

a

= 25 °C P

c

d

C

for 10 s 300

E

AS

I

AR

E

AR

D

dV/dt 21 V/ns

, T

J

stg

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.

S15-0456-Rev. D, 16-Mar-15

= 25 °C, L = 1.7 mH, Rg = 25 Ω, IAS = 26 A, dV/dt = 21 V/ns (see fig. 12).

J

≤ 26 A, dI/dt ≤ 480 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

600

26

570 mJ

26 A

47 mJ

470 W

-55 to +150

10 lbf · in

1.1 N · m

Document Number: 91218

V

AT

°C

IRFP26N60L, SiHFP26N60L

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-40

0.24 -

-0.27

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 10 A

DS(on)

fs

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Effective Output Capacitance C

Effective Output Capacitance
(Energy related)

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

- 450 -

oss

-34-

rss

eff.

oss

C

eff. (ER) - 170 -

oss

g

--61

gs

--85

gd

d(on)

r

-47-

d(off)

-42-

f

V

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

Forward Turn-On Time t

S

I

SM

SD

rr

RRM

on

rr

MOSFET symbol
showing the
integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

C

eff. (ER) is a fixed capacitance that stores the same energy as C

oss

VGS = 0 V, ID = 250 μA 600 - - V

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 600 V, VGS = 0 V - - 50 μA

V

= 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA

DS

b

VDS = 50 V, ID = 16 A 13 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 0 V VDS = 0 V to 480 V

V

GS

= 26 A, VDS = 480 V,

I

= 10 V

GS

V

D

see fig. 7 and 15

= 300 V, ID = 26 A,

DD

R

= 4.3 Ω,VGS = 10 V

g

see fig. 11a and 11b

TJ = 25 °C, IS = 26 A, VGS = 0 V

c

b

b

b

TJ = 25 °C, IF = 26 A - 170 250

= 125 °C, dI/dt = 100 A/μs

T

J

TJ = 25 °C, IF = 26 A, VGS = 0 V

= 125 °C, dI/dt = 100 A/μs

T

J

b

b

b

TJ = 25 °C - 7.3 11 A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

while VDS is rising from 0 % to 80 % VDS.

oss

Vishay Siliconix

°C/WCase-to-Sink, Flat, Greased Surface R

-0.210.25Ω

- 5020 -

- 230 -

--180

-31-

- 110 -

--26

--100

--1.5V

- 210 320

- 670 1000

- 1050 1570

pF

nC Gate-Source Charge Q

ns

A

ns

nC

S15-0456-Rev. D, 16-Mar-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91218

www.vishay.com

I

D

, Drain-to-Source Current (A)

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

VGS
15 V
12 V
10 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom

Top

5.5 V

20 μs PULSE WIDTH
TJ = 150 °C

ID = 26 A

VGS = 10 V

TJ, Junction Temperature

R

DS(on)

, Drain-to-Source On Resistance (Normalized)

- 60 - 20- 40

0

20 40 60 80 100 120 140 160

0.5

1.0

1.5

2.0

2.5

3.0

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFP26N60L, SiHFP26N60L

Vishay Siliconix

1000

100

Top

Bottom

VGS
15 V
12 V
10 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

10

1

, Drain-to-Source Current (A)

D

I

0.1

0.01

0.1

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

20 μs PULSE WIDTH
TJ = 25 °C

1

5.5 V

1000.00

100.00

TJ = 150 °C

10.00

TJ = 25 °C

, Drain-to-Source Current (A)

1.00

D

I

VDS = 50 V

0.10

2.0

4.0

10

100

6.0

20 μs PULSE WIDTH

10.0

8.0

12.0

14.0

16.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

S15-0456-Rev. D, 16-Mar-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 2 - Typical Output Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 4 - Normalized On-Resistance vs. Temperature

3

For technical questions, contact: [e-mail]

Document Number: 91218

www.vishay.com

C

rss

C

oss

C

iss

VGS = 0 V, f = 1 MHz
C

iss

= Cgs + Cgd, Cds SHORTED

C

rss

= C

gd

C

oss

= Cds + C

gd

1

10

100

1000

10

100

1000

10000

1000000

C, Capacitance (pF)

VDS, Drain-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Energy (µJ)

0

100

200

300

400

500

0

5

10

15

20

25

30

600

700

VSD, Source-to-Drain Voltage (V)

I

SD

, Reverse Drain Current (A)

1000.00

0.2

1.0

0.6

1.2

1.6

0.10

10.00

100.00

TJ = 150 °C

T

J

= 25 °C

1.00

0.4

0.8

1.4

V

GS

= 0 V

IRFP26N60L, SiHFP26N60L

Vishay Siliconix

12.0

10.0

8.0

6.0

4.0

, Gate-to-Source Voltage (V)

GS

V

2.0

ID = 26 A

VDS = 480 V

= 300 V

V

DS

= 120 V

V

DS

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Output Capacitance Stored Energy vs.V

DS

0.0
0

25

50

Qg, Total Gate Charge (nC)

100

125

75

150

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Typical Source-Drain Diode Forward Voltage

S15-0456-Rev. D, 16-Mar-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

4

Document Number: 91218

www.vishay.com

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

0.0001

0.001

0.1

1

1E-006

0.0001

0.001

0.1

t , Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

0.01

0.02

0.05

0.20

D = 0.50

0.01

1E-005

1

0.10

SINGLE PULSE

(THERMAL RESPONSE)

t

1

t

2

Notes:

1. Duty factor D = t1/ t

2

2. Peak TJ = PDM x Z

thJC

+ T

C

P

DM

0.01

IRFP26N60L, SiHFP26N60L

Vishay Siliconix

1000

OPERATING IN THIS AREA LIMITED

BY R

DS(on)

100

10

, Drain Current (A)

D

I

1

= 25 °C

T

C

= 150 °C

T

J

Single Pulse

0.1
1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 9 - Maximum Safe Operating Area

100 µs

1 ms

10 ms

1000

10000

30

25

20

15

, Drain Current (A)

10

D

I

5

0

25

50

75

100

125

150

TC, Case Temperature (°C)

Fig. 10 - Maximum Drain Current vs. Case Temperature

S15-0456-Rev. D, 16-Mar-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 11a - Switching Time Test Circuit

Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 11b - Switching Time Waveforms

5

Document Number: 91218

www.vishay.com

TJ, Temperature (°C)

V

GS(th)

, Gate threshold Voltage (V)

-75

-50

-25 100

125

150

2.0

3.0

4.0

5.0

6.0

75

50

25

0

I

D = 250 μA

25

1050

900

750

600

450

0

150

125

100

75

50

I

D

TOP 12 A
16 A
BOTTOM 26 A

Starting TJ, Junction Temperature (°C)

E

AS

, Single Pulse Avalanche Energy (mJ)

300

150

Q

GS

Q

GD

Q

G

V

G

Charge

VGS V

IRFP26N60L, SiHFP26N60L

Vishay Siliconix

Fig. 13 - Threshold Voltage vs. Temperature

Fig. 14c - Maximum Avalanche Energy vs. Drain Current

15 V

L

D.U.T

I

AS

0.01

p

Ω

R

V

G

20 V

DS

t

Fig. 14a - Unclamped Inductive Test Circuit

Driver

+

V

A

DD

-

Fig. 15a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

V

I

AS

Fig. 14b - Unclamped Inductive Waveforms

S15-0456-Rev. D, 16-Mar-15

DS

t

p

12 V

V

GS

Fig. 15b - Gate Charge Test Circuit

6

50 kΩ

0.2 µF

0.3 µF

3 mA

I

G

Current sampling resistors

D.U.T.

I

D

Document Number: 91218

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

+

V

DS

-

www.vishay.com

IRFP26N60L, SiHFP26N60L

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

-

D =

g

P.W.

Period

+

+

V

DD

-

V

= 10 Va

GS

D.U.T. l

waveform

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. V

Inductor current

Note

a. V

waveform

DS

= 5 V for logic level devices

GS

Body diode forward

current

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Ripple ≤ 5 %

V

DD

I

SD

Fig. 16 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91218

S15-0456-Rev. D, 16-Mar-15

.

7

Document Number: 91218

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

0.10 AC

M M

E

E/2

(2)

(4)

R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

L1

1

2

3

Q

D

A

A2

A

A

A1

C

Ø k BD

M M

A

ØP

(Datum B)

ØP1

D1

4

E1

0.01 BD

M M

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

4

3

5

7

4

4

4

Lead Assignments

1. Gate

2. Drain

3. Source

4. Drain

Package Information

Vishay Siliconix

TO-247AC (High Voltage)

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625
A2 1.17 2.49 0.046 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010
b2 1.53 2.39 0.060 0.094 L 14.20 16.25 0.559 0.640
b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169
b4 2.42 3.43 0.095 0.135 N 7.62 BSC 0.300 BSC
b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.144

c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC

ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Contour of slot optional.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions D1 and E1.

5. Lead finish uncontrolled in L1.

6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").

7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.

8. Xian and Mingxin actually photo.

Revision: 01-Jul-13

Document Number: 91360

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 13-Jun-16

1

Document Number: 91000