Datasheet IRFP23N50L, SiHFP23N50L DataSheet (Vishay)

IRFP23N50L, SiHFP23N50L

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

()V

DS(on)

Q

(Max.) (nC) 150

g

Q

(nC) 44

gs

Q

(nC) 72

gd

Configuration Single

= 10 V 0.190

GS

FEATURES

• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications

• Lower Gate Charge Results in Simpler Drive
Requirements

• Enhanced dV/dt Capabilities Offer Improved Ruggedness

• Higher Gate Voltage Threshold Offers Improved Noise
Immunity

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control Applications

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SnPb

IRFP23N50LPbF

SiHFP23N50L-E3

IRFP23N50L

SiHFP23N50L

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 15

C

DS

± 30

GS

I

D

IDM 92

Linear Derating Factor 2.9 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 21 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.

= 25 °C, L = 1.5 mH, Rg = 25 , IAS = 23 A (see fig. 12).

J

 23 A, dI/dt  650 A/μs, VDD  VDS, TJ  150 °C.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91209 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

23

410 mJ

23 A

37 mJ

370 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

AT

°C

IRFP23N50L, SiHFP23N50L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C
Effective Output Capacitance

(Energy Related)
Internal Gate Resistance R

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

eff. is a fixed capacitance that gives the same charging time as C

c. C

oss

eff. (ER) is a fixed capacitance that stores the same energy time as C

d. C

oss

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 14 A

DS(on)

fs

iss

- 380 -

oss

-37-

rss

oss

eff. VDS = 0 V to 400 V

oss

eff. (ER) VDS = 0 V to 400 V

C

oss

f = 1 MHz, open drain - 1.2 - 

G

g

--44

gs

--72

gd

d(on)

r

-53-

d(off)

-45-

f

S

I

SM

SD

rr

rr

RRM

on

V

V

GS

V

GS

MOSFET symbol
showing the
integral reverse

p - n junction diode

TJ = 25 °C

T

= 125 °C - 220 330

J

TJ = 25 °C - 560 840

T

=1 25 °C - 980 1500

J

-40

0.24 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.34

VGS = 0 V, ID = 250 μA 500 - - V

d

-0.27-V/°C

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 50 μA

= 400 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA

DS

VDS = 50 V, ID = 14 A

VGS = 0 V,

V

DS

= 25 V,

b

b

- 0.190 0.235 

12 - - S

- 3600 -

f = 1.0 MHz, see fig. 5

V

= 1.0 V , f = 1.0 MHz - 4800 -

DS

V

= 400 V , f = 1.0 MHz - 100 -

= 0 V

= 10 V

TJ = 25 °C, IS = 14 A, VGS = 0 V

DS

= 23 A, VDS = 400 V

I

D

see fig. 6 and 13

V

= 250 V, ID = 23 A

DD

Rg = 6.0, V

GS

see fig. 10

= 10 V

b

c

d

- 220 -

- 160 -

- - 150

b

-26-

-94-

D

G

S

b

--23

--92

--1.5V

- 170 250

I

= 23 A,

F

dI/dt = 100 A/μs

b

TJ = 25 °C - 7.6 11 A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising fom 0 % to 80 % VDS.

oss

while VDS is rising fom 0 % to 80 % VDS.

oss

pF

nC Gate-Source Charge Q

ns

A

ns

μC

www.vishay.com Document Number: 91209
2 S11-0445-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.1 1 10 100

0.001

0.01

0.1

1

10

100

I

D

,

Drain-to-Source Current (A)

4.5 V

20µs PULSE WIDTH
Tj = 25 °C

VDS, Drain-to-Source Voltage (V)

TOP 15V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10 100

0.1

10

100

20µs PULSE WIDTH
Tj = 150 °C

VDS, Drain-to-Source Voltage (V)

1

1

I

D

, Drain-to-Source Current (A)

4,5 V

TOP 15V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1.0 6.0 11.0 16.0

VGS, Gate-to-Source Voltage (V)

1.00

10.00

100.00

1000.00

I

D

, Drain-to Source Current (A)

TJ = 25 °C

T

J

= 150 °C

20 µs PULSE WIDTH

T

J

= 150°C

-60 -40 -20 0 20 40 60 80 100 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

ID = 23 A

V

GS

= 10 V

120

T

J

,

Junction Temperature (°C)

R

DS(ON)

, Drain-to-Source On Resistance

(Normalized)

IRFP23N50L, SiHFP23N50L

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91209 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFP23N50L, SiHFP23N50L

1 10 100 1000

10

100

1000

10000

100000

C, Capacitance (pF)

VDS, Drain-to-Source Voltage (V)

V

GS

= 0 V, f = 1 MHZ

C

iss

= Cgs + Cgd, Cds SHORTED

C

rss

= C

gd

C

oss

= Cds + C

gd

Ciss

Coss

Crss

0

V

, Drain-to-Source Voltage (V)

0

5

10

15

20

25

Energy (µJ)

100

200 300

400

500 600

OPERATION IN THIS AREA LIMITED

1000

100

10

1

10

100

1000 10000

TC = 25 °C

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

BY R

DS(ON)

10us

100us

1ms

10ms

TJ = 150 °C

Single Pulse

24

0

2

5

7

10

12

0487296

120

V

GS

, Gate-to-Source Voltage (V)

QG, Total Gate Charge (nC)

I

D

= 23

V

DS

= 400 V

V

DS

= 250 V

V

DS

= 100 V

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Maximum Safe Operating Area

Fig. 8 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com Document Number: 91209
4 S11-0445-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Fig. 9 - Typical Source-Drain Diode Forward Voltage

0.0

0.10

1.00

10.00

100.00

0.5

1.0

1.5

2.0

I

SD

, Reverse Drain Current (A)

VSD, Source-to-Drain Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

V

GS

= 0 V

50 75 100 150

0

5

10

15

20

25

25

125

I

D

, Drain Current (A)

TC, Case Temperature (°C)

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

0.001

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

Thermal Response (Z

thJC

)

t1, Rectangular Pulse Duration (sec)

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE
(THERMAL RESPONSE)

Notes:

1. Duty factor D = t1 / t
2

2. PeakT

J

= P DM x Z

thJC

+ T

C

P

DM

t

1

t

2

IRFP23N50L, SiHFP23N50L

Vishay Siliconix

R

D.U.T.

D

+

V

-

DD

V

DS

V

GS

R

G

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 11a - Switching Time Test Circuit

Fig. 11b - Switching Time Waveforms

Fig. 10 - Maximum Drain Current vs. Case Temperature

Document Number: 91209 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFP23N50L, SiHFP23N50L

0

150

300

450

600

750

25

50

75 100

125

150

E

AS

, Single Pulse Avalanche Energy (mJ)

Starting T , Junction Temperature (°C)

I

D

TOP 10A
15A
BOTTOM 23A

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

Driver

A

15 V

20 V

I

AS

V

DS

t

p

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

5.0

4.5

4.0

= 250 µA

I

D

Gate Threshold Voltage (V)

GS(th)

V

3.5

3.0

2.5

2.0

1.5

Fig. 15b - Unclamped Inductive Waveforms

1.0

- 75 - 50 - 25 0 25 50 75 100 125

150

TJ, Temperature (°C)

Fig. 13 - Threshold Voltage vs. Temperature

Fig. 14 - Maximum Avalanche Energy s. Drain Current

Fig. 16a - Gate Charge Test Circuit

Q

10 V

V

Q

GS

G

G

Q

GD

www.vishay.com Document Number: 91209
6 S11-0445-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Charge

Fig. 16b - Basic Gate Charge Waveform

Fig. 15a - Unclamped Inductive Test Circuit

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

IRFP23N50L, SiHFP23N50L

Vishay Siliconix

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91209

Document Number: 91209 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 7

.

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 17 - For N-Channel

www.vishay.com/doc?91000

www.vishay.com

0.10 AC

M M

E

E/2

(2)

(4)

R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

L1

1

2

3

Q

D

A

A2

A

A

A1

C

Ø k BD

M M

A

ØP

(Datum B)

ØP1

D1

4

E1

0.01 BD

M M

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

4

3

5

7

4

4

4

Lead Assignments

1. Gate

2. Drain

3. Source

4. Drain

Package Information

Vishay Siliconix

TO-247AC (High Voltage)

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625
A2 1.17 2.49 0.046 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010
b2 1.53 2.39 0.060 0.094 L 14.20 16.25 0.559 0.640
b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169
b4 2.42 3.43 0.095 0.135 N 7.62 BSC 0.300 BSC
b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.144

c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291

c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC

ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Contour of slot optional.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions D1 and E1.

5. Lead finish uncontrolled in L1.

6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").

7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.

8. Xian and Mingxin actually photo.

Revision: 01-Jul-13

Document Number: 91360

1

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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

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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.

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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16

1

Document Number: 91000