Datasheet IRFP064, SiHFP064 DataSheet (Vishay)

Power MOSFET

TO-247AC

G

D

S

IRFP064, SiHFP064

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 60

(Ω)V

R

DS(on)

Q

(Max.) (nC) 190

g

Q

(nC) 55

gs

Q

(nC) 90

gd

Configuration Single

= 10 V 0.009

GS

D

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Ultra Low On- Resistance

• Very Low Thermal Resistance

• Isolated Central Mounting Hole

• 175 °C Operating Temperature

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

G

ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power

S

N-Channel MOSFET

levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SnPb

IRFP064PbF
SiHFP064-E3
IRFP064
SiHFP064

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current

Pulsed Drain Current

a

e

VGS at 10 V

C

T

= 100 °C 70

C

DS

± 20

GS

I

D

IDM 520
Linear Derating Factor 2.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)

d

for 10 s 300

E

AS

I

AR

E

AR

D

dV/dt 4.5 V/ns

, T

J

stg

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 69 μH, Rg = 25 Ω, IAS = 130 A (see fig. 12).

DD

c. I

≤ 130 A, dI/dt ≤ 300 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.

SD

d. 1.6 mm from case.
e. Current limited by the package (die current = 130 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91201 www.vishay.com
S11-0447-Rev. C, 14-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

60

70

1000 mJ

70 A
30 mJ

300 W

- 55 to + 175

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

A

°C

IRFP064, SiHFP064

D

S

G

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.048 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Current limited by the package (die current = 130 A).

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

- 3200 -

oss

- 540 -

rss

g

--55

gs

--90

gd

d(on)

r

- 110 -

d(off)

- 190 -

f

D

V

V

R

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IF = 130 A, dI/dt = 100 A/μs

-40

0.24 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.50

VGS = 0 V, ID = 250 μA 60 - -

VDS = VGS, ID = 250 μA 2.0 -

= ± 20 V - -

GS

VDS = 60 V, VGS = 0 V - -

= 48 V, VGS = 0 V, TJ = 150 °C - -

DS

= 10 V ID = 78 A

GS

VDS = 25 V, ID = 78 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--

38 - -

- 7400 -

4.0 V

± 100 nA

25

250

0.009 Ω

- - 190

= 130 A, VDS = 48 V,

I

= 10 V

GS

D

see fig. 6 and 13

b

-21-

V

= 30 V, ID = 130 A,

DD

= 4.3 Ω, RD = 0.22 Ω, see fig. 10

g

b

- 190 -

-5.0-

-13-

--70

c

- - 520

TJ = 25 °C, IS = 130 A, VGS = 0 V

b

--3.0

- 160 250

b

-0.91.7

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

μA

S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

V

ns

μC

www.vishay.com Document Number: 91201
2 S11-0447-Rev. C, 14-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFP064, SiHFP064

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91201 www.vishay.com
S11-0447-Rev. C, 14-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFP064, SiHFP064

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91201
4 S11-0447-Rev. C, 14-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFP064, SiHFP064

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

Vishay Siliconix

R

D.U.T.

D

+

-

V

DS

V

GS

R

G

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V

DD

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10b - Switching Time Waveforms

Document Number: 91201 www.vishay.com
S11-0447-Rev. C, 14-Mar-11 5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFP064, SiHFP064

R

G

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

10 V

Var y t

p

to obtain

required I

AS

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

V

DS

t

p

V

DS

I

AS

V

DD

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

10 V

V

Q

GS

G

G

Q

GD

Charge

www.vishay.com Document Number: 91201
6 S11-0447-Rev. C, 14-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Peak Diode Recovery dV/dt Test Circuit

IRFP064, SiHFP064

Vishay Siliconix

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

•

I

controlled by duty factor “D”

SD

• D.U.T. - device under test

-

D =

g

Period

P.W.

+

+

V

DD

-

V

= 10 Va

GS

D.U.T. l

Reverse
recovery
current

D.U.T. V

Re-applied
voltage

Inductor current

Note

a. V

waveform

SD

Body diode forward

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

current

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91201

.

Document Number: 91201 www.vishay.com
S11-0447-Rev. C, 14-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

www.vishay.com

0.10 AC

M M

E

E/2

(2)

(4)

R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

L1

1

2

3

Q

D

A

A2

A

A

A1

C

Ø k BD

M M

A

ØP

(Datum B)

ØP1

D1

4

E1

0.01 BD

M M

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

4

3

5

7

4

4

4

Lead Assignments

1. Gate

2. Drain

3. Source

4. Drain

Package Information

Vishay Siliconix

TO-247AC (High Voltage)

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625
A2 1.17 2.49 0.046 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010
b2 1.53 2.39 0.060 0.094 L 14.20 16.25 0.559 0.640
b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169
b4 2.42 3.43 0.095 0.135 N 7.62 BSC 0.300 BSC
b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.144

c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291

c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC

ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Contour of slot optional.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions D1 and E1.

5. Lead finish uncontrolled in L1.

6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").

7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.

8. Xian and Mingxin actually photo.

Revision: 01-Jul-13

Document Number: 91360

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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

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Revision: 13-Jun-16

1

Document Number: 91000