Page 1
IRFIB6N60A, SiHFIB6N60A
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
R
(Ω)V
DS(on)
Q
(Max.) (nC) 49
g
Q
(nC) 13
gs
Q
(nC) 20
gd
Configuration Single
TO-220 FULLPAK
= 10 V 0.75
GS
D
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
G
• High Speed Power Switching
• High Voltage Isolation = 2.5 kV
S
D
G
N-Channel MOSFET
S
TYPICAL SMPS TOPOLOGIES
• Single Transistor Forward
• Active Clamped Forward
ORDERING INFORMATION
Package TO-220 FULLPAK
Lead (Pb)-free
SnPb
IRFIB6N60APbF
SiHFIB6N60A-E3
IRFIB6N60A
SiHFIB6N60A
(t = 60 s, f = 60 Hz)
RMS
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
T
= 100 °C 3.5
C
DS
± 30
GS
I
D
IDM 37
Linear Derating Factor 0.48 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 5.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 6.8 mH, RG = 25 Ω, IAS = 9.2 A (see fig. 12).
J
≤ 9.2 A, dI/dt ≤ 50 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91175 www.vishay.com
S09-0516-Rev. C, 13-Apr-09 1
600
5.5
290 mJ
9.2 A
6.0 mJ
60 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
V
°C
Page 2
IRFIB6N60A, SiHFIB6N60A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thJC
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
d. t = 60 s, f = 60 Hz.
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 3.3 A
DS(on)
fs
iss
- 180 -
oss
-7.1-
rss
oss
eff. VDS = 0 V to 480 V
oss
g
--13
gs
--20
gd
d(on)
r
-30-
d(off)
-22-
f
S
I
SM
SD
rr
rr
on
V
V
GS
V
GS
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µs
-65
-2.1
°C/W
VGS = 0 V, ID = 250 µA 600 - - V
d
- 660 - mV/°C
VDS = VGS, ID = 250 µA 2.0 - 4.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 25
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
- - 0.75 Ω
VDS = 25 V, ID = 5.5 A 5.5 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 1.0 V, f = 1.0 MHz - 1957 -
V
DS
= 0 V
V
= 480 V, f = 1.0 MHz - 49 -
DS
c
- 1400 -
-96-
--49
= 9.2 A, VDS = 400 V,
I
= 10 V
D
see fig. 6 and 13
b
-13-
V
= 300 V, ID = 9.2 A,
DD
R
= 9.1 Ω, RD = 35.5 Ω,
G
see fig. 10
b
G
TJ = 25 °C, IS = 9.2 A, VGS = 0 V
D
S
b
-25-
--5.5
--37
--1.5V
- 530 800 ns
b
-3.04.4µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
µA
pF
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91175
2 S09-0516-Rev. C, 13-Apr-09
Page 3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
100
IRFIB6N60A, SiHFIB6N60A
Vishay Siliconix
°
T = 150 C
J
10
°
T = 25 C
J
1
4.7V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig. 1 - Typical Output Characteristics
100
10
D
I , Drain-to-Source Current (A)
1
1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.7V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
4.7V
°
Fig. 2 - Typical Output Characteristics
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE W IDTH
Fig. 3 - Typical Transfer Characteristics
3.0
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
9.2A
I =
D
V =
GS
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
°
Fig. 4 - Normalized On-Resistance vs. Temperature
10V
Document Number: 91175 www.vishay.com
S09-0516-Rev. C, 13-Apr-09 3
Page 4
IRFIB6N60A, SiHFIB6N60A
Vishay Siliconix
2400
2000
1600
1200
800
C, Capacitance (pF)
400
0
1 10 100 1000
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds g d
iss
oss
rss
V , Drain-to-Source Voltage (V)
DS
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
I =
9.2A
D
V = 480V
DS
16
V = 300V
DS
V = 120V
DS
100
10
°
T = 150 C
J
1
°
T = 25 C
J
SD
I , Reverse Drain Current (A)
V = 0 V
A
0.1
0.2 0.5 0.7 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
GS
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
100
BY R
DS(on)
12
8
4
GS
V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
SEE FIGURE
13
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10us
10
D
I , Drain Current (A)I , Drain Current (A)
1
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
10 100 1000 10000
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91175
4 S09-0516-Rev. C, 13-Apr-09
Page 5
6.0
A
5.0
IRFIB6N60A, SiHFIB6N60A
Vishay Siliconix
R
D.U.T.
D
+
V
DD
-
V
DS
V
GS
R
G
4.0
3.0
2.0
D
I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
thJC
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001 0.0001 0. 001 0.01 0.1 1 10
t , Rectangular Pulse Duration (s)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)tr
t
d(off)tf
Fig. 10b - Switching Time Waveforms
P
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
V
DS
15 V
V
DS
R
G
20 V
L
D.U.T.
I
AS
0.01
t
p
Ω
Driver
+
V
-
Fig. 12a - Unclamped Inductive Test Circuit
A
DD
I
AS
Fig. 12b - Unclamped Inductive Waveforms
t
p
Document Number: 91175 www.vishay.com
S09-0516-Rev. C, 13-Apr-09 5
Page 6
IRFIB6N60A, SiHFIB6N60A
Vishay Siliconix
10 V
600
500
TOP
BOTTOM
I
D
4.1A
5.8A
9.2A
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
°
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
0.2 µF
50 kΩ
0.3 µF
D.U.T.
+
V
DS
-
Q
G
Q
GS
Q
GD
12 V
V
G
Charge
V
GS
3 mA
I
G
Current sampling resistors
I
D
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91175
6 S09-0516-Rev. C, 13-Apr-09
Page 7
IRFIB6N60A, SiHFIB6N60A
Peak Diode Recovery dV/dt Test Circuit
Vishay Siliconix
D.U.T.
+
-
R
G
Driver gate drive
P.W.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
controlled by duty factor "D"
SD
• D.U.T. - device under test
Period
-
D =
G
P. W.
Period
+
+
V
DD
-
= 10 V*
V
GS
waveform
SD
Body diode forward
current
waveform
DS
Ripple ≤ 5 %
= 5 V for logic level devices
GS
Diode recovery
Body diode forward drop
dV/dt
dI/dt
V
DD
I
SD
Reverse
recovery
current
Re-applied
voltage
D.U.T. I
D.U.T. V
Inductor current
* V
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91175
.
Document Number: 91175 www.vishay.com
S09-0516-Rev. C, 13-Apr-09 7
Page 8
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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