Datasheet IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL DataSheet (Vishay)

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 600

R

()V

DS(on)

Q

(Max.) (nC) 23

g

Q

(nC) 5.4

gs

Q

(nC) 11

gd

Configuration Single

= 10 V 2.2

GS

D

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Low Gate Charge Q
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage
and Current

• Effective C

Specified

oss

Results in Simple Drive

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

G

S

N-Channel MOSFET

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Flyback

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHFBC30AS-GE3 SiHFBC30ASTRL-GE3

Lead (Pb)-free

IRFBC30ASPbF IRFBC30ASTRLPbF

SiHFBC30AS-E3 SiHFBC30ASTL-E3

Note

a. See device orientation.

a

SiHFBC30ASTRR-GE3aSiHFBC30AL-GE3

a

IRFBC30ASTRRPbF

a

SiHFBC30ASTR-E3

a

IRFBC30ALPbF

a

SiHFBC30AL-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a, e

at 10 V

GS

C

= 100 °C 2.3

C

DS

± 30

GS

I

D

IDM 14

Linear Derating Factor 0.69 W/°C

c, e

b

a

= 25 °C P

C

Single Pulse Avalanche Energy

Avalanche Current

a

Repetiitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 7.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91109
S11-1052-Rev. C, 30-May-11 1

= 25 °C, L = 46 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).

J

 3.6 A, dI/dt  170 A/μs, VDD  VDS, TJ  150 °C.

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

600

3.6

290 mJ

3.6 A

7.4 mJ

74 W

- 55 to + 150

d

www.vishay.com/doc?91000

V

AT

°C

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient (PCB
Mounted, steady-state)

a

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

d. Uses IRFBC30A/SiHFBC30A data and test conditions.

www.vishay.com Document Number: 91109
2 S11-1052-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

R

thJA

thJC

DS

GS(th)

V

GSS

-40

-1.7

VGS = 0, ID = 250 μA 600 - - V

d

-0.67-V/°C

VDS = VGS, ID = 250 μA 2.0 - 4.5 V

= ± 30 V - - ± 100 nA

GS

VDS = 600 V, VGS = 0 V - - 25

DSS

VGS = 10 V ID = 2.2 A

DS(on)

fs

iss

-70-

oss

-3.5-

rss

oss

eff. VDS = 0 V to 480 V

oss

g

--5.4

gs

--11

gd

d(on)

r

-19-

d(off)

-12-

f

S

I

SM

SD

rr

rr

on

V

= 480 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

--2.2

VDS = 50 V, ID = 2.2 A 2.1 - - S

- 510 -

-31-

f = 1.0 MHz, see fig. 5

V

= 0 V

GS

VGS = 0 V,

V

= 25 V,

DS

V

= 1.0 V, f = 1.0 MHz - 730 -

DS

= 480 V, f = 1.0 MHz - 19 -

V

DS

c

--23

= 3.6 A, VDS = 480 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-9.8-

V

= 300 V, ID = 3.6 A,

DD

R

= 12 , RD = 82 , see fig. 10

g

b, d

MOSFET symbol
showing the
integral reverse

G

p - n junction diode

TJ = 25 °C, IS = 3.6 A, VGS = 0 V

b

TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs

D

S

-13-

--3.6

--14

--1.6V

- 400 600 ns

b,

-1.11.7μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 to 80 % VDS.

oss

This document is subject to change without notice.

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°C/W

μA

pF

nC Gate-Source Charge Q

ns

A

0.01

0.1

1

10

100

0.1 1 10 100

20µs PULSE WIDTH
T = 25 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

0.1

1

10

0.1 1 10 100

20µs PULSE WIDTH
T = 150 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

100

10

°

T = 150 C

J

1

°

T = 25 C

0.1

D

I , Drain-to-Source Current (A)

0.01

4.0 5.0 6.0 7.0 8.0 9.0

J

V = 50V

DS

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

GS

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

3.0

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

3.6A

I =

D

V =

GS

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

°

Fig. 4 - Normalized On-Resistance vs. Temperature

10V

Document Number: 91109 www.vishay.com
S11-1052-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

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1 10 100 1000

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

10000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

Coss

Crss

Ciss

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ Cgd, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0 4 8 12 16 20 24

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

3.6A

V = 120V

DS

V = 300V

DS

V = 480V

DS

0.1

1

10

100

0.4 0.6 0.8 1.0 1.2

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

0.1

1

10

100

10 100 1000 10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T T= 150 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

www.vishay.com Document Number: 91109
4 S11-1052-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

This document is subject to change without notice.

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25 50 75 100 125 150

0.0

1.0

2.0

3.0

4.0

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

A

R

g

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

Driver

15 V

20 V

I

AS

V

DS

t

p

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

R

D.U.T.

D

+

V

-

DD

V

DS

V

GS

R

g

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10b - Switching Time Waveforms

Document Number: 91109 www.vishay.com
S11-1052-Rev. C, 30-May-11 5

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12a - Unclamped Inductive Test Circuit

This document is subject to change without notice.

Fig. 12b - Unclamped Inductive Waveforms

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25 50 75 100 125 150

0

100

200

300

400

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

I

D

TOP

BOTTOM

1.6A

2.3A

3.6A

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

740

)
V

720

(
e

g
a

t

l
o
V

700

e
h
c
n
a

l
a
v

680

A
,

v
a
S

660

D

V

640

0.0 1.0 2.0 3.0 4.0

IAV, Avalanche Current ( A)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

V

GS

Q

GS

V

G

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform

Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanache Current

Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91109
6 S11-1052-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

-

D =

g

Period

P.W.

+

+

V

DD

-

= 10 Va

V

GS

D.U.T. l

Reverse
recovery
current

D.U.T. V

Re-applied
voltage

Inductor current

Note

a. V

waveform

SD

Body diode forward

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

current

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91109

.

Document Number: 91109 www.vishay.com
S11-1052-Rev. C, 30-May-11 7

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Package Information

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

D2

www.vishay.com

Vishay Siliconix

TO-220AB

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183

b 0.69 1.01 0.027 0.040

b(1) 1.20 1.73 0.047 0.068

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610

D2 12.19 12.70 0.480 0.500

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.09 6.48 0.240 0.255

J(1) 2.41 2.92 0.095 0.115

L 13.35 14.02 0.526 0.552

L(1) 3.32 3.82 0.131 0.150

Ø P 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118

ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471

Note

* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM

Revison: 16-Jun-14

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

Document Number: 71195

TO-263AB (HIGH VOLTAGE)

(Datum A)

34

E

L1

4

D

L2

4

C

1

B

B

C

3

2

B

B

Package Information

Vishay Siliconix

A

A

5

H

Detail A

B

A

c2

Gauge
plane

0° to 8°

L

L3

L4

Detail “A”
Rotated 90° CW
scale 8:1

H

B

Seating plane

A1

2 x e

Lead tip

2 x b2

2 x b

0.010 A B

MM

Plating

(c)

Section B - B and C - C

c

± 0.004 B

5

b1, b3

(b, b2)

Scale: none

M

Base
metal

c1

A

E

D1

4

5

E1

View A - A

4

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1

I2PAK (TO-262) (HIGH VOLTAGE)

(Datum A)

E

L1

Package Information

Vishay Siliconix

A

A

B

c2

A

E

D

L2

0.010 A B

Lead tip

B

2 x e

M

Seating

plane

C

C

B

M

3 x b2

3 x b

L

A1

A

E1

Section A - A

Plating

c

b1, b3

(b, b2)

Section B - B and C - C

Scale: None

c

D1

Base
metal

c1

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380

A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -

b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420

b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -

b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC

b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065

c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146

c2 1.14 1.65 0.045 0.065

ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.

3. Thermal pad contour optional within dimension E, L1, D1, and E1.

4. Dimension b1 and c1 apply to base metal only.

Document Number: 91367 www.vishay.com
Revision: 27-Oct-08 1

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420

(10.668)

0.635
(16.129)

0.355

AN826

Vishay Siliconix

(9.017)

Return to Index

0.135

(3.429)

0.200

(5.080)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.257)

0.145

(3.683)

Document Number: 73397
11-Apr-05

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1

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Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 13-Jun-16

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Document Number: 91000