Datasheet IRFB9N65A, SiHFB9N65A DataSheet (Vishay)

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

IRFB9N65A, SiHFB9N65A

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 650

R

()V

DS(on)

Q

(Max.) (nC) 48

g

Q

(nC) 12

gs

Q

(nC) 19

gd

Configuration Single

= 10 V 0.93

GS

D

FEATURES

• Low Gate Charge Qg Results in Simple Drive
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage
and Current

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

G

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

S

N-Channel MOSFET

• Single Transistor Flyback

• Single Transistor Forward

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFB9N65APbF
SiHFB9N65A-E3
IRFB9N65A
SiHFB9N65A

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 5.4

C

DS

± 30

GS

I

D

IDM 21

Linear Derating Factor 1.3 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

C

c

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 2.8 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T

c. I

SD

= 25 °C, L = 24 mH, Rg = 25 , IAS = 5.2 A (see fig. 12).

J

 5.2 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

650

8.5

325 mJ

5.2 A

16 mJ

167 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91104 www.vishay.com
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

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IRFB9N65A, SiHFB9N65A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

d. Uses SiHFIB5N65A data and test conditions.

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 5.1 A

DS(on)

fs

iss

- 177 -

oss

-7.0-

rss

oss

eff. VDS = 0 V to 520 V

oss

g

--12

gs

--19

gd

d(on)

r

-34-

d(off)

-18-

f

S

V

V

V

GS

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IF = 5.2 A, dI/dt = 100 A/μs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.75

VGS = 0 V, ID = 250 μA 650 - - V

d

- 670 - mV/°C

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 650 V, VGS = 0 V - - 25

= 520 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

- - 0.93 

VDS = 50 V, ID = 3.1 A 3.9 - - S

VGS = 0 V,

V

DS

f = 1.0 MHz, see fig. 5

V

GS

= 0 V

V

= 25 V,

= 1.0 V, f = 1.0 MHz - 1912 -

DS

= 520 V, f = 1.0 MHz - 48 -

DS

c

- 1417 -

-84-

--48

= 5.2 A, VDS = 400 V

I

= 10 V

D

see fig. 6 and 13

b

-14-

= 325 V, ID = 5.2 A

V

DD

R

= 9.1 ,RD = 62 ,

g

see fig. 10

b

G

TJ = 25 °C, IS = 5.2 A, VGS = 0 V

D

S

b

-20-

--5.2

--21

--1.5V

- 493 739 ns

b

-2.13.2μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

μA

pF

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91104
2 S11-0561-Rev. C, 11-Apr-11

This document is subject to change without notice.

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0.1

1

10

100

0.1 1 10 100

20µs PULSE WIDTH
T = 25 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

0.1

1

10

100

1 10 100

20µs PULSE WIDTH
T = 150 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

0.1

1

10

100

4.0 5.0 6.0 7.0 8.0 9.0

V = 100V
20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J

°

T = 150 C

J

°

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFB9N65A, SiHFB9N65A

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

3.0

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

5.2A

I =

D

V =

GS

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

°

Fig. 4 - Normalized On-Resistance vs. Temperature

10V

Document Number: 91104 www.vishay.com
S11-0561-Rev. C, 11-Apr-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRFB9N65A, SiHFB9N65A

0.1

1

10

100

0.2 0.4 0.6 0.8 1.0 1.2

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

0.1

1

10

100

10 100 1000 10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T T= 150 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

Vishay Siliconix

2000

1600

1200

800

V = 0V, f = 1MHz

GS

C = C + C , C SHORTED

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C, Capacitance (pF)

400

0

1 10 100 1000

C

rss

V , Drain-to-Source Voltage (V)

DS

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

I =

5.2A

D

V = 520V

DS

V = 325V

16

DS

V = 130V

DS

A

Fig. 7 - Typical Source-Drain Diode Forward Voltage

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 10 20 30 40 50

Q , Total Gate Charge (nC)

G

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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4 S11-0561-Rev. C, 11-Apr-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

FOR TEST CIRCUIT

SEE FIGURE

13

This document is subject to change without notice.

Fig. 8 - Maximum Safe Operating Area

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25 50 75 100 125 150

0.0

2.0

4.0

6.0

8.0

10.0

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

V

DS

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)tr

t

d(off)tf

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (s)

Thermal Response

(Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRFB9N65A, SiHFB9N65A

Vishay Siliconix

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

Document Number: 91104 www.vishay.com
S11-0561-Rev. C, 11-Apr-11 5

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

This document is subject to change without notice.

www.vishay.com/doc?91000

IRFB9N65A, SiHFB9N65A

A

A

R

G

I

AS

0.01

Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

Driver

A

15 V

20 V

t

p

V

DS

I

AS

25 50 75 100 125 150

0

200

400

600

800

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

I

D

TOP

BOTTOM

2.3A

3.3A

5.2A

700

720

740

760

780

800

0123456

A

DSav

av

I , Avalanche Current (A)

V , Avalanche Voltage (V)

Q

G

Q

GS

Q

GD

V

G

Charge

10 V

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

www.vishay.com Document Number: 91104
6 S11-0561-Rev. C, 11-Apr-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanche Current

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

50 kΩ

12 V

0.2 µF

0.3 µF

D.U.T.

+

V

DS

-

V

GS

3 mA

I

Current sampling resistors

G

I

D

Fig. 13b - Gate Charge Test Circuit

This document is subject to change without notice.

www.vishay.com/doc?91000

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

IRFB9N65A, SiHFB9N65A

Vishay Siliconix

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91104

Document Number: 91104 www.vishay.com
S11-0561-Rev. C, 11-Apr-11 7

.

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 14 - For N-Channel

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220AB

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183

b 0.69 1.01 0.027 0.040

b(1) 1.20 1.73 0.047 0.068

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.09 6.48 0.240 0.255

J(1) 2.41 2.92 0.095 0.115

L 13.35 14.02 0.526 0.552

L(1) 3.32 3.82 0.131 0.150

Ø P 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118

ECN: T13-0724-Rev. O, 14-Oct-13
DWG: 5471

Note

* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Oct-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions, contact: [e-mail]

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

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Document Number: 91000