Datasheet IRFB17N50L, SiHFB17N50L DataSheet (Vishay)

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

IRFB17N50L, SiHFB17N50L

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

()V

DS(on)

Q

(Max.) (nC) 130

g

Q

(nC) 33

gs

Q

(nC) 59

gd

Configuration Single

= 10 V 0.28

GS

D

FEATURES

• Low Gate Charge Qg results in Simple Drive
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage
and Current

•Low t

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

G

S

N-Channel MOSFET

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

• ZVS and High Frequency Circuit

• PWM Inverters

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFB17N50LPbF
SiHFB17N50L-E3
IRFB17N50L
SiHFB17N50L

and Soft Diode Recovery

rr

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 11

C

DS

± 30

GS

I

D

IDM 64

Linear Derating Factor 1.8 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 13 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T

c. I

SD

= 25 °C, L = 3.0 mH, Rg = 25 , IAS = 16 A (see fig. 12).

J

 16 A, dI/dt  347 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91098 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

16

390 mJ

16 A

22 mJ

220 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

AT

°C

IRFB17N50L, SiHFB17N50L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-0.56

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 9.9 A

DS(on)

fs

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

- 325 -

oss

-37-

rss

oss

eff. VGS = 0 V VDS = 0 V to 400 V

oss

g

--33

gs

--59

gd

d(on)

r

-50-

d(off)

-28-

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

Forward Turn-On Time t

S

I

SM

SD

rr

RRM

on

rr

MOSFET symbol
showing the

integral reverse
p - n junction diode

T

T

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91098
2 S11-0514-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 50 μA

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA

DS

b

VDS = 50 V, ID = 9.9 A

b

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 0 V VDS = 1.0 V , f = 1.0 MHz - 3690 -

V

GS

V

= 0 V VDS = 400 V , f = 1.0 MHz - 84 -

GS

c

- 0.28 0.32 

11 - - S

- 2760 -

- 159 -

- - 130

= 16 A, VDS = 400 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-21-

= 250 V, ID = 16 A,

V

DD

R

= 7.5 , see fig. 10

g

TJ = 25 °C, IS = 16 A, VGS = 0 V

b

D

G

S

b

TJ = 25 °C

= 125 °C - 220 330

J

TJ = 25 °C - 470 710

= 125 °C - 810 1210

J

= 16 A, dI/dt = 100 A/μs

I

F

-51-

--16

--64

--1.5V

- 170 250

b

-7.311A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

www.vishay.com/doc?91000

pF

nC Gate-Source Charge Q

ns

A

ns

nC

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0.1

1

10

100

0.01

0.1

1

10

100

VGS
15 V
12 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Top

Bottom

5.0 V

20 μs PULSE WIDTH
TJ = 25 °C

I

D

, Drain-to-Source Current (A)

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

VGS
15 V
12 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom

Top

5.0 V

20 μs PULSE WIDTH
TJ = 125 °C

VDS = 50 V
20 μs PULSE WIDTH

TJ = 25 °C

TJ = 150 °C

5.0

4.0

7.0

6.0

8.0

9.0

10.0

0.1

1

10

100

VGS, Gate-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

IRFB17N50L, SiHFB17N50L

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

3.0
ID = 16 A

2.5

2.0

1.5

1.0

0.5

, Drain-to-Source On Resistance (Normalized)

80

VGS = 10 V

100

120

140

160

DS(on)

R

0.0

- 60

- 40

- 20

60

40

0

20

TJ, Junction Temperature

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91098 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFB17N50L, SiHFB17N50L

VDS = 400 V
VDS = 250 V
VDS = 100 V

ID = 16 A

0

30

60

90

120

150

0

4

8

12

16

20

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

OPERATING IN THIS AREA LIMITED

BY R

DS(on)

10 ms

1 ms

100 μs

10 μs

TC = 25 °C
TJ = 150 °C
Single Pulse

10

100

1000

10000

0.1

1

10

100

1000

I

D

, Drain Current (A)

VDS, Drain-to-Source Voltage (V)

Vishay Siliconix

1 000 000

10 000

1000

C, Capacitance (pF)

100

10

1

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

VGS = 0 V, f = 1 MHz
C

= Cgs + Cgd, Cds Shorted

iss

C

= C

rss

gd

C

= Cds + C

oss

10

VDS, Drain-to-Source Voltage (V)

gd

C

iss

C

oss

C

rss

100

1000

100

TJ = 150 °C

10

TJ = 25 °C

1

, Reverse Drain Current (A)

SD

I

0.1

0.2

0.6

VSD, Source-to-Drain Voltage (V)

0.9

Fig. 7 - Typical Source-Drain Diode Forward Voltage

VGS = 0 V

1.3

1.6

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91098
4 S11-0514-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

TC, Case Temperature (°C)

I

D

, Drain Current (A)

25

50

75

100

125

150

0

4

8

12

16

20

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

Thermal Response (Z

thJC

)

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

t

1

t

2

Notes:

1. Duty factor D = t1/ t

2

2. Peak TJ = PDM x Z

thJC

+ T

C

P

DM

IRFB17N50L, SiHFB17N50L

Fig. 9 - Maximum Drain Current vs. Case Temperature

V

DS

V

GS

R

G

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Vishay Siliconix

R

D

D.U.T.

+

V

-

DD

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Document Number: 91098 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFB17N50L, SiHFB17N50L

A

R

G

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

Driver

A

15 V

20 V

I

AS

V

DS

t

p

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

800

640

480

I
TOP 7 A
10 A
BOTTOM 16 A

D

320

, Single Pulse Avalanche Energy (mJ)

160

AS

E

0

25

50

75

100

125

150

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

V

GS

Q

GS

V

G

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91098
6 S11-0514-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

IRFB17N50L, SiHFB17N50L

Vishay Siliconix

Fig. 14 - For N-Channel

.

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91098

Document Number: 91098 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 7

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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Revision: 13-Jun-16

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Document Number: 91000