Datasheet IRFB13N50A, SiHFB13N50A DataSheet (Vishay)

TO-220AB

G

D

S

Available

Available

IRFB13N50A, SiHFB13N50A

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

()V

DS(on)

Q

(Max.) (nC) 81

g

Q

(nC) 20

gs

Q

(nC) 36

gd

Configuration Single

= 10 V 0.450

GS

D

FEATURES

• Lower Gate Charge Qg Results in Simpler Drive
Reqirements

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

G

S

N-Channel MOSFET

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supplies

• High Speed Power Switching

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
SiHFB13N50A

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

a

V

GS

at 10 V

= 25 °C

T

C

= 100 °C

T

C

V

DS

V

GS

I

D

IDM

Linear Derating Factor 2.0 W/°C

Single Pulse Avalanche Energy

Avalanche Current

a

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

b

a

= 25 °C P

T

C

c

E

AS

I

AR

E

AR

D

dV/dt 9.2 V/ns

, T

T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T

c. I

SD

= 25 °C, L = 5.7 mH, Rg = 25 , IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a).

J

 14 A, dI/dt  250 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

500

± 30

14

9.1

56

560 mJ

14 A

25 mJ

250 W

- 55 to + 150

d

300

10 lbf · in

1.1 N · m

V

A

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91095 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFB13N50A, SiHFB13N50A

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-0.50

°C/WCase-to-Sink, Flat, Greasd Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.55 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 8.4 A

DS(on)

fs

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

- 290 -

oss

-11-

rss

oss

eff. VDS = 0 V to 400 V

oss

g

--

gs

--

gd

d(on)

r

-39-

d(off)

-31-

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Body Diode Reverse Recovery Current I

Forward Turn-On Time t

S

I

SM

SD

rr

RRM

on

rr

MOSFET symbol
showing the
integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

- - 0.450 

VDS = 50 V, ID = 8.4 A 8.1 - - S

- 1910 -

- 160 -

--

81

20

f = 1.0 MHz, see fig. 5

V

= 0 V

GS

VGS = 0 V,

V

= 25 V,

DS

= 1.0 V, f = 1.0 MHz - 2730 -

V

DS

V

= 400 V, f = 1.0 MHz - 82 -

DS

c

I

= 14 A, VDS = 400 V,

D

see fig. 6 and 13

b

36

V

= 10 V

GS

= 250 V, ID = 14 A,

V

DD

R

= 7.5,

g

see fig. 10

b

-15-

-39-

--14

--56

TJ = 25 °C, IS = 14 A, VGS = 0 V

b

--1.5V

- 370 550 ns

TJ = 25 °C, IF = 14 A,

T

= 125 °C, dI/dt = 100 A/μs

J

b

-4.46.5μC

-2131A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

μA

pF

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91095
2 S11-0514-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

I

D

, Drain-to-Source Current (A)

91095_01

20 µs Pulse Width
T

J

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

1

10

10

2

10

10

-2

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

1

0.1

0.1

10

2

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

J

= 150 °C

91095_02

4.5 V

1

10

10

2

10

1

0.1

0.1

10

2

I

D

= 14 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91095_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

IRFB13N50A, SiHFB13N50A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

2

10

10

TJ = 25 °C

1

, Drain-to-Source Current (A)

D

I

0.1
4

6 8 10 12 14 16

91095_03

V

GS

Fig. 3 - Typical Transfer Characteristics

Vishay Siliconix

TJ = 150 °C

20 µs Pulse Width
V

= 50 V

DS

Gate-to-Source Voltage (V)

,

Document Number: 91095 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFB13N50A, SiHFB13N50A

10 10

2

C, Capacitance (pF)

V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91095_05

10

5

10

2

10

3

10

4

10

1

1

10

3

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

12.5

10

7.5

5

0

2.5

0

12

60

4836

24

V

DS

= 100 V

V

DS

= 250 V

V

DS

= 400 V

91095_06

ID = 14 A

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

2

10

10

1

, Reverse Drain Current (A)

SD

I

0.1

91095_07

Fig. 7 - Typical Source-Drain Diode Forward Voltage

TJ = 150 °C

TJ = 25 °C

0.2

VSD, Source-to-Drain Voltage (V)

V

= 0 V

GS

1.10.80.5

1.4

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

10

2

10

10

, Drain Current (A)

D

1

I

0.1
10 10

91095_08

Operation in this area limited

by R

DS(on)

100 µs

1 ms

TC = 25 °C
T

= 150 °C

J

Single Pulse

2

10 ms

10

3

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

4

10

www.vishay.com Document Number: 91095
4 S11-0514-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

150

I

D

, Drain Current (A)

TC, Case Temperature (°C)

0

3

6

9

12

15

25

91095_09

1251007550

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

IRFB13N50A, SiHFB13N50A

Fig. 9 - Maximum Drain Current vs. Case Temperature

V

DS

V

GS

R

G

Vishay Siliconix

R

D

D.U.T.

+

V

-

DD

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

1

)

thJC

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

-2

10

Thermal Response (Z

-3

10

-5

10

91095_11

Single Pulse
(Thermal Response)

-4

10

-3

10

-2

10

t1, Rectangular Pulse Duration (s)

Notes:

1. Duty Factor, D = t

2. Peak TJ = PDM x Z

P

DM

t

1

t

2

1/t2

+ T

thJC

0.1 1

C

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91095 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFB13N50A, SiHFB13N50A

A

R

G

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

Driver

15 V

20 V

I

AS

V

DS

t

p

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit

1150

920

Fig. 12b - Unclamped Inductive Waveforms

I

TOP

BOTTOM

D

6.3A

8.9A
14A

690

460

230

, Single Pulse Avalanche Energy (mJ)

AS

E

0

25 50 75 100 125 150

Starting Tj, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

V

GS

Q

GS

V

G

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91095
6 S11-0514-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFB13N50A, SiHFB13N50A

+

-

R

g

D.U.T.

Peak Diode Recovery dV/dt Test Circuit

+

-

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

g

+

Vishay Siliconix

+

V

DD

-

Reverse
recovery
current

Re-applied
voltage

Driver gate drive

P.W.

D.U.T. l

D.U.T. V

Inductor current

Note

a. V

waveform

SD

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Fig. 14 - For N-Channel

Period

Body diode forward

current

Diode recovery

dV/dt

dI/dt

D =

P.W.

Period

V

GS

V

DD

I

SD

= 10 Va

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

Document Number: 91095 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFB13N50A, SiHFB13N50A

Vishay Siliconix

reliability data, see www.vishay.com/ppg?91095.

www.vishay.com Document Number: 91095
8 S11-0514-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220AB

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183

b 0.69 1.01 0.027 0.040

b(1) 1.20 1.73 0.047 0.068

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.09 6.48 0.240 0.255

J(1) 2.41 2.92 0.095 0.115

L 13.35 14.02 0.526 0.552

L(1) 3.32 3.82 0.131 0.150

Ø P 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118

ECN: T13-0724-Rev. O, 14-Oct-13
DWG: 5471

Note

* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Oct-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions, contact: [e-mail]

1

Document Number: 71195

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000