Datasheet IRFB11N50A, SiHFB11N50A DataSheet (Vishay)

IRFB11N50A, SiHFB11N50A

*

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

(Ω)V

DS(on)

Q

(Max.) (nC) 52

g

Q

(nC) 13

gs

Q

(nC) 18

gd

Configuration Single

TO-220

= 10 V 0.52

GS

D

FEATURES

• Low Gate Charge Qg Results in Simple Drive
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and
Avalanche Voltage and current

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

G

• High Speed Power Switching

APPLICABLE OFF LINE SMPS TOPOLOGIES

S

D

G

N-Channel MOSFET

S

• Two Transistor Forward

• Half and Full Bridge

• Power Factor Correction Boost

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

SnPb

IRFB11N50APbF
SiHFB11N50A-E3
IRFB11N50A
SiHFB11N50A

Available

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 7.0

C

DS

± 30

GS

I

D

IDM 44

Linear Derating Factor 1.3 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 6.9 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

= 25 °C, L = 4.5 mH, RG = 25 Ω, IAS = 11 A (see fig. 12).

J

≤ 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91094 www.vishay.com
S-81243-Rev. B, 21-Jul-08 1

500

11

275 mJ

11 A

17 mJ

170 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFB11N50A, SiHFB11N50A

Vishay Siliconix

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C

effective is a fixed capacitance that gives the same charging time as C

oss

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 6.6 A

DS(on)

fs

iss

- 208 -

oss

-8.1-

rss

oss

eff. VDS = 0 V to 400 V - 97 -

oss

g

--13

gs

--18

gd

d(on)

r

-32-

d(off)

-28-

f

S

I

SM

SD

rr

rr

on

V

V

GS

V

GS

MOSFET symbol
showing the
integral reverse

p - n junction diode

TJ = 25 °C, IF = 11 A, dI/dt = 100 A/µs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.75

VGS = 0 V, ID = 250 µA 500 - - V

VDS = VGS, ID = 250 µA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 150 °C - - 250

DS

b

- - 0.52 Ω

VDS = 50 V, ID = 6.6 A 6.1 - - S

VGS = 0 V,

= 25 V,

V

DS

- 1423 -

f = 1.0 MHz, see fig. 5

V

= 1.0 V, f = 1.0 MHz - 2000 -

DS

= 0 V

= 400 V, f = 1.0 MHz - 55 -

V

DS

--52

= 11 A, VDS = 400 V

I

= 10 V

D

see fig. 6 and 13

b

-14-

V

= 250 V, ID = 11 A

DD

R

= 9.1 Ω, RD = 22 Ω, see fig. 10

G

G

TJ = 25 °C, IS = 11 A, VGS = 0 V

b

D

S

b

-35-

--11

--44

--1.5V

- 510 770 ns

b

-3.45.1µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 to 80 % VDS.

oss

µA

pF

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91094
2 S-81243-Rev. B, 21-Jul-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

IRFB11N50A, SiHFB11N50A

Vishay Siliconix

100

10

°

T = 150 C

J

°

T = 25 C

J

1

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

°

T = 25 C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig. 1 - Typical Output Characteristics

100

10

D

I , Drain-to-Source Current (A)

1

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

1 10 100

V , Drain-to-Source Volt age (V)

DS

20µs PULSE WIDTH
T = 150 C

°

J

Fig. 2 - Typical Output Characteristics

1

D

I , Drain-to-Source Current (A)

V = 50V

DS

0.1

4.0 5.0 6.0 7.0 8.0 9.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDT H

Fig. 3 - Typical Transfer Characteristics

3.0

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

11A

I =

D

V =

GS

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

°

Fig. 4 - Normalized On-Resistance vs. Temperature

10V

Document Number: 91094 www.vishay.com
S-81243-Rev. B, 21-Jul-08 3

IRFB11N50A, SiHFB11N50A

Vishay Siliconix

2400

2000

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100 1000

V = 0V, f = 1MHz

GS

C = C + C , C SHORTED

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

iss

oss

rss

V , Drain-to-Source Voltage (V)

DS

A

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

I =

6.6A

D

V = 400V

DS

V = 250V

16

DS

V = 100V

DS

100

10

°

T = 150 C

J

1

°

T = 25 C

J

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.0 0.4 0.8 1.2 1.6

V ,Source-to-Drain Voltage (V)

SD

GS

Fig. 7 - Typical Source-Drain Diode Forward Voltage

1000

OPERATION IN THIS AREA LIMITED

100

BY R

DS(on)

12

8

4

GS

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

0

0 10 20 30 40 50

Q , Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

G

SEE FIGURE

13

10us

10

D

I , Drain Current (A)I , Drain Current (A)

1

°

= 25 C

C

T T= 150 C
Single Pulse

0.1
10 100 1000 10000

°

J

V , Drain-to-Source Voltage (V)

DS

100us

1ms

10ms

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91094
4 S-81243-Rev. B, 21-Jul-08

IRFB11N50A, SiHFB11N50A

A

Vishay Siliconix

R

D.U.T.

D

+

V

DD

-

12

10

R

8

6

V

DS

V

GS

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

4

D

I , Drain Current (A)

2

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 9 - Maximum Drain Current vs. Case Temperature

1

D = 0.50

thJC

0.20

0.1

0.10

0.05

Thermal Response (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (s)

1

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10a - Switching Time Test Circuit

V

DS

90 %

10 %

V

GS

t

d(on)tr

t

d(off)tf

Fig. 10b - Switching Time Waveforms

P

DM

t

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

t

2

V

DS

15 V

Driver

+

V

A

DD

-

R

V

G

20 V

DS

L

D.U.T.

I

AS

0.01

t

p

Ω

Fig. 12a - Unclamped Inductive Test Circuit

I

AS

Fig. 12b - Unclamped Inductive Waveforms

t

p

Document Number: 91094 www.vishay.com
S-81243-Rev. B, 21-Jul-08 5

IRFB11N50A, SiHFB11N50A

A

Vishay Siliconix

600

500

TOP

BOTTOM

I

D

4.9A

7.0A
11A

400

300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

°

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

660

640

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

50 kΩ

12 V

0.2 µF

V

GS

0.3 µF

D.U.T.

3 mA

+

V

DS

-

620

600

DSav

V , Avalanche Voltage (V)

580

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

I , Avalanche Current (A)

av

Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche

Current

I

Current sampling resistors

G

I

D

Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91094
6 S-81243-Rev. B, 21-Jul-08

IRFB11N50A, SiHFB11N50A

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix

D.U.T

+

-

R

G

Driver gate drive

P.W.

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by duty factor "D"

SD

• D.U.T. - device under test

Period

-

D =

G

P. W.

Period

+

+

V

DD

-

= 10 V*

V

GS

waveform

SD

Body diode forward

current

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Diode recovery

dV/dt

dI/dt

V

DD

I

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. I

D.U.T. V

Inductor current

* V

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91094.

Document Number: 91094 www.vishay.com
S-81243-Rev. B, 21-Jul-08 7

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1