Datasheet IRF9Z34, SiHF9Z34 DataSheet (Vishay)

www.vishay.com

TO-220AB

G

D

S

IRF9Z34, SiHF9Z34

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) -60

R

()V

DS(on)

Q

max. (nC) 34

g

Q

(nC) 9.9

gs

Q

(nC) 16

gd

Configuration Single

= -10 V 0.14

GS

S

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

•P-channel

• 175 °C operating temperature

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For

G

example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

D

P-Channel MOSFET

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness. 
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF9Z34PbF

SiHF9Z34-E3

IRF9Z34

SiHF9Z34

Available

Available





ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at -10 V

GS

C

= 100 °C -13

C

DS

± 20

GS

I

D

IDM -72

Linear Derating Factor 0.59 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

b

a

a

= 25 °C P

c

d

C

for 10 s 300

E

AS

I

AR

E

AR

D

dV/dt -4.5 V/ns

, T

J

stg

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= -25 V, starting TJ = 25 °C, L = 1.3 mH, Rg = 25 , IAS = -18 A (see fig. 12).

DD

c. I

 -18 A, dI/dt  170 A/μs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.

S16-0754-Rev. C, 02-May-16

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

-60

-18

370 mJ

-18 A

8.8 mJ

88 W

-55 to +175

10 lbf · in

1.1 N · m

Document Number: 91092

V

AT

°C

IRF9Z34, SiHF9Z34

D

S

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.060 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

-620-

oss

-100-

rss

g

--9.9

gs

--16

gd

d(on)

r

-20-

d(off)

-58-

f

D

S

VGS = 0 V, ID = -250 μA -60 - - V

VDS = VGS, ID = 250 μA -2.0 - -4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = -60 V, VGS = 0 V - - -100

= -48 V, VGS = 0 V, TJ = 150 °C - - -500

V

DS

= -10 V ID = -11 A

GS

VDS = -25 V, ID = -11 A

b

b

VGS = 0 V,

V

= -25 V,

DS

f = 1.0 MHz, see fig. 5

= -1 8 A,

I

D

= -10 V

V

GS

= -30 V, ID = -18 A,

V

DD

R

= 12 , RD = 1.5, see fig. 10

g

V

= -48 V,

DS

see fig. 6 and 13

b

b

Between lead,
6 mm (0.25") from
package and center of
die contact

Vishay Siliconix

°C/WCase-to-Sink, Flat, Greased Surface R

μA

- - 0.14 

5.9 - - S

- 1100 -

pFOutput Capacitance C

--34

nC Gate-Source Charge Q

-18-

-120-

-4.5-

-7.5-

ns

nH

Gate Input Resistance R

g

f = 1 MHz, open drain 0.7 - 3.9 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p -n junction diode

TJ = 25 °C, IS = -18 A, VGS = 0 V

b

TJ = 25 °C, IF = -18 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

---18

---72

---6.3V

- 100 200 ns

b

- 0.28 0.52 μC

A

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S16-0754-Rev. C, 02-May-16

2

Document Number: 91092

www.vishay.com

10

-1

10

0

10

1

- V

DS

,

Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width
T

C

= 175 °C

91092_02

- 4.5 V

10

2

10

1

10

0

20 µs Pulse Width
V

DS

= - 25 V

10

1

10

0

- I

D

, Drain Current (A)

- V

GS

,

Gate-to-Source Voltage (V)

5678 910

4

25 °C

175 °C

91092_03

2000

1600

1200

800

0

400

10

0

10

1

Capacitance (pF)

- V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91092_05

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF9Z34, SiHF9Z34

Vishay Siliconix

2

10

1

10

, Drain Current (A)

D

- I

0

10

10

91092_01

V

To p

Bottom

-1

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

0

10

- VDS, Drain-to-Source Voltage (V)

- 4.5 V

20 µs Pulse Width

= 25 °C

T

C

1

10

Fig. 1 - Typical Output Characteristics, TC = 25 °C

2.5
I

= - 18 A

D

= - 10 V

V

GS

2.0

1.5

1.0

(Normalized)

0.5

, Drain-to-Source On Resistance

DS(on)

0.0

R

91092_04

- 60 - 40- 20 0 20 40

T

Junction Temperature (°C)

,

J

60 80 100

120 140 160

Fig. 4 - Normalized On-Resistance vs. Temperature

180

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

ID = - 18 A

V

16

V

= - 30 V

DS

DS

12

8

Fig. 3 - Typical Transfer Characteristics

S16-0754-Rev. C, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

3

, Gate-to-Source Voltage (V)

4

GS

- V

0

0

91092_06

10

5

2015

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Document Number: 91092

= - 48 V

For test circuit
see figure 13

30

25

35

www.vishay.com

10

1

10

0

- VSD, Source-to-Drain Voltage (V)

- I

SD

, Reverse Drain Current (A)

0.0

4.0

3.02.01.0

25 °C

175 °C

V

GS

= 0 V

91092_07

5.0

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

TC = 25 °C
T

J

= 175 °C

Single Pulse

10

2

0.1

2

5

1

2

5

10

2

5

25

1

251025

10

2

25

10

3

91092_08

10

3

- I

D

, Drain Current (A)

TC, Case Temperature (°C)

0

4

8

12

16

20

91092_09

15025 1251007550

175

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

- 10 V

+

-

V

DS

V

DD

V

GS

10 %

90 %

V

DS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

Single Pulse
(Thermal Response)

D = 0.5

0.2

0.05

0.02

0.01

91092_11

0.1

IRF9Z34, SiHF9Z34

Vishay Siliconix

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

S16-0754-Rev. C, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

4

Document Number: 91092

IRF9Z34, SiHF9Z34

R

G

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

­V

DD

- 10 V

Var y tp to obtain
required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

www.vishay.com

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Vishay Siliconix

1200

1000

800

600

400

, Single Pulse Energy (mJ)

200

AS

E

91092_12c

VDD = - 25 V

0

25 150

50

Starting TJ, Junction Temperature (°C)

To p

Bottom

125

10075

I

D

- 7.3 A

- 13 A

- 18 A

175

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

- 10 V

V

Q

G

Q

GS

G

Q

GD

12 V

V

GS

0.2 µF

50 kΩ

- 3 mA

0.3 µF

D.U.T.

+

Charge

I

G

Current sampling resistors

I

D

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

-

V

DS

S16-0754-Rev. C, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5

For technical questions, contact: [e-mail]

Document Number: 91092

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P.W.

Period

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Body diode forward

current

Driver gate drive

Inductor current

D =

P.W.

Period

+

-

-

-

-

+

+

+

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

g

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

• Compliment N-Channel of D.U.T. for driver

V

DD

• I

SD

controlled by duty factor “D”

Note

Note

a. V

GS

= - 5 V for logic level and - 3 V drive devices

V

GS

= - 10 V

a

D.U.T. lSD waveform

D.U.T. V

DS

waveform

V

DD

Re-applied
voltage

Ripple ≤ 5 %

I

SD

Reverse
recovery
current

IRF9Z34, SiHF9Z34

Vishay Siliconix

Fig. 14 - For P-Channel











Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91092

S16-0754-Rev. C, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

.

6

For technical questions, contact: [e-mail]

Document Number: 91092

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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Disclaimer



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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.

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Revision: 13-Jun-16

1

Document Number: 91000