Datasheet IRF9640S, SiHF9640S, IRF9640L, SiHF9640L DataSheet (Vishay)

www.vishay.com

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) -200

R

()V

DS(on)

Q

max. (nC) 44

g

Q

(nC) 7.1

gs

Q

(nC) 27

gd

Configuration Single

= -10 V 0.50

GS

G

S

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

•P-channel

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and

D

P-Channel MOSFET

cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application. The through-hole version (IRF9640L,
SiHF9640L) is available for low-profile applications.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHF9640S-GE3 - - SiHF9640L-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRF9640SPbF IRF9640STRLPbF

SiHF9640S-E3 SiHF9640STL-E3

a

IRF9640STRRPbF a IRF9640LPbF

a

SiHF9640STR-E3

a

SiHF9640L-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at -10 V

GS

C

= 100 °C -6.8

C

DS

± 20

GS

I

D

IDM -44

Linear Derating Factor 1.0

Linear Derating Factor (PCB mount)

Single Pulse Avalanche Energy

Avalanche Current

a

Repetitive Avalanche Energy

Maximum Power Dissipation T

Maximum Power Dissipation (PCB mount)

Peak Diode Recovery dV/d

c

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 , IAS = -11 A (see fig. 12).

DD

 -11 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C.

c. I

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

S16-0754-Rev. E, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

e

b

a

= 25 °C

e

C

TA = 25 °C 3.0

E

AS

I

AR

E

AR

P

D

dV/dt -5.0 V/ns

, T

J

d

for 10 s 300

stg

1

For technical questions, contact: [e-mail]

-200

-11

0.025

700 mJ

-11 A

13 mJ

125

-55 to +150

Document Number: 91087

Available

Available

V

AT

W/°C

W

°C





IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

D

S

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient 
(PCB mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

-62

-40

-1.0

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.20 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = -10 V ID = 6.6 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Gate Input Resistance R

iss

- 370 -

oss

-81-

rss

g

--7.1

gs

--27

gd

d(on)

r

-39-

d(off)

-38-

f

D

S

g

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = -250 μA -200 - - V

VDS = VGS, ID = -250 μA -2.0 - -4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = -200 V, VGS = 0 V - - -100

= -160 V, VGS = 0 V, TJ = 125 °C - - -500

V

DS

VDS = -50 V, ID = -6.6 A

b

b

VGS = 0 V,

V

= -25 V,

DS

f = 1.0 MHz, see fig. 5

= -11 A, VDS = -160 V,

I

V

= -10 V

GS

V

R

= 9.1 , RD = 8.6 , see fig. 10

g

D

see fig. 6 and 13

= -100 V, ID = -11 A,

DD

b

b

Between lead,
6 mm (0.25") from
package and center of
die contact

f = 1 MHz, open drain 0.3 - 1.7 

MOSFET symbol
showing the 
integral reverse
p -n junction diode

TJ = 25 °C, IS = -11 A, VGS = 0 V

TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

- - 0.50 

4.1 - - S

- 1200 -

--44

-14-

-43-

-4.5-

-7.5-

---11

---44

---5.0V

- 250 300 ns

-2.93.6μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S16-0754-Rev. E, 02-May-16

2

Document Number: 91087

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

91087_01

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width
T

C

= 25 °C

- 4.5 V

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

I

D

= - 11 A

V

GS

= - 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91087_04

- 60 - 40 - 20 0 20 40 6080100 120 140 160

2400

2000

1600

1200

0

400

800

10

0

10

1

Capacitance (pF)

- V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91087_05

QG, Total Gate Charge (nC)

- V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

10

50

4030

20

V

DS

= - 40 V

V

DS

= - 100 V

For test circuit
see figure 13

V

DS

= - 160 V

91087_06

ID = - 11 A

60

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

V

To p

1

10

Bottom

, Drain Current (A)

D

- I

0

10

0

10

91087_02

Fig. 2 - Typical Output Characteristics, T

1

10

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

10

- V

Drain-to-Source Voltage (V)

,

DS

25 °C

150 °C

20 µs Pulse Width

= 150 °C

T

C

1

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

- 4.5 V

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

, Drain Current (A)

D

91087_03

- I

S16-0754-Rev. E, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

0

10

4

5678910

- V

Gate-to-Source Voltage (V)

,

GS

20 µs Pulse Width
V

= - 50 V

DS

Fig. 3 - Typical Transfer Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91087

www.vishay.com

10

1

10

0

- VSD, Source-to-Drain Voltage (V)

- I

SD

, Reverse Drain Current (A)

1.0

5.0

4.0

3.02.0

25 °C

150 °C

V

GS

= 0 V

91087_07

10

-1

0.0

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

2

2

5

1

2

5

10

25

110

25

10

2

10

3

25

91087_08

- I

D

, Drain Current (A)

TC, Case Temperature (°C)

0

4

6

8

10

12

91087_09

15025 125100

75

50

2

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

- 10 V

+

-

V

DS

V

DD

V

GS

10 %

90 %

V

DS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

Single Pulse
(Thermal Response)

D = 0.50

0.20

0.05

0.02

0.01

91087_11

0.10

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

Vishay Siliconix

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

S16-0754-Rev. E, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

4

Document Number: 91087

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

R

g

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

­V

DD

- 10 V

Var y tp to obtain
required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

1600

0

400

800

1200

Starting TJ, Junction Temperature (°C)

E

AS

, Single Pulse Energy (mJ)

Bottom

To p

I

D

- 4.9 A

- 7.0 A

- 11 A

VDD = - 50 V

91087_12c

25 150

125

10075

50

www.vishay.com

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Vishay Siliconix

S16-0754-Rev. E, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

- 10 V

V

Q

G

Q

GS

G

Q

GD

12 V

V

GS

0.2 µF

50 kΩ

0.3 µF

D.U.T.

- 3 mA

Charge

I

G

Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5

For technical questions, contact: [e-mail]

Document Number: 91087

-

V

+

DS

I

D

www.vishay.com

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

g

Note

• Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

• dV/dt controlled by R

• I

controlled by duty factor “D”

SD

• D.U.T. - device under test

current transformer

-

g

P.W.

D =

Period

+

V

= - 10 V

GS

+

V

DD

-

a

D.U.T. lSD waveform

Reverse
recovery
current

Re-applied
voltage

D.U.T. V

Inductor current

Note

a. V

waveform

DS

= - 5 V for logic level and - 3 V drive devices

GS

Body diode forward

current

Body diode forward drop

Ripple ≤ 5 %

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Fig. 14 - For P-Channel











Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91087

S16-0754-Rev. E, 02-May-16

.

6

Document Number: 91087

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-263AB (HIGH VOLTAGE)

(Datum A)

34

E

L1

4

D

L2

4

C

1

B

B

C

3

2

B

B

Package Information

Vishay Siliconix

A

A

5

H

Detail A

B

A

c2

Gauge
plane

0° to 8°

L

L3

L4

Detail “A”
Rotated 90° CW
scale 8:1

H

B

Seating plane

A1

2 x e

Lead tip

2 x b2

2 x b

0.010 A B

MM

Plating

(c)

Section B - B and C - C

c

± 0.004 B

5

b1, b3

(b, b2)

Scale: none

M

Base
metal

c1

A

E

D1

4

5

E1

View A - A

4

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1

I2PAK (TO-262) (HIGH VOLTAGE)

(Datum A)

E

L1

Package Information

Vishay Siliconix

A

A

B

c2

A

E

D

L2

0.010 A B

Lead tip

B

2 x e

M

Seating

plane

C

C

B

M

3 x b2

3 x b

L

A1

A

E1

Section A - A

Plating

c

b1, b3

(b, b2)

Section B - B and C - C

Scale: None

c

D1

Base
metal

c1

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380

A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -

b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420

b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -

b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC

b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065

c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146

c2 1.14 1.65 0.045 0.065

ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.

3. Thermal pad contour optional within dimension E, L1, D1, and E1.

4. Dimension b1 and c1 apply to base metal only.

Document Number: 91367 www.vishay.com
Revision: 27-Oct-08 1

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420

(10.668)

0.635
(16.129)

0.355

AN826

Vishay Siliconix

(9.017)

Return to Index

0.135

(3.429)

0.200

(5.080)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.257)

0.145

(3.683)

Document Number: 73397
11-Apr-05

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1

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Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16

1

Document Number: 91000