Datasheet IRF9630, SiHF9630 DataSheet (Vishay)

www.vishay.com

S

G

D

P-Channel MOSFET

TO-220AB

G

D

S

IRF9630, SiHF9630

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) -200

R

max. ()V

DS(on)

Q

max. (nC) 29

g

Q

(nC) 5.4

gs

Q

(nC) 15

gd

Configuration Single

= -10 V 0.80

GS

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

•P-channel

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness. 
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF9630PbF

SiHF9630-E3

IRF9630

SiHF9630

Available

Available





ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at -10 V

GS

C

= 100 °C -4.0

C

DS

± 20

GS

I

D

IDM -26

Linear Derating Factor 0.59 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

b

a

a

= 25 °C P

c

d

C

for 10 s 300

E

AS

I

AR

E

AR

D

dV/dt -5.0 V/ns

, T

J

stg

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12).

DD

c. I

 -6.5 A, dI/dt 20 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.

S16-0754-Rev. D, 02-May-16

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

-200

-6.5

500 mJ

-6.4 A

7.4 mJ

74 W

-55 to +150

10 lbf · in

1.1 N · m

Document Number: 91084

V

AT

°C

IRF9630, SiHF9630

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.24 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = -10 V ID = -3.9 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Gate Input Resistance R

iss

- 200 -

oss

-40-

rss

g

--5.4

gs

--15

gd

d(on)

r

-28-

d(off)

-24-

f

D

S

g

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = -250 μA -200 - - V

VDS = VGS, ID = -250 μA -2.0 - -4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = -200 V, VGS = 0 V - - -100

= -160 V, VGS = 0 V, TJ = 125 °C - - -500

V

DS

VDS = -50 V, ID = -3.9 A

b

b

VGS = 0 V,

V

= -25 V,

DS

f = 1.0 MHz, see fig. 5

= -6.5 A,

I

D

V

= -10 V

GS

V

= -100 V, ID = -6.5 A,

DD

R

= 12 , RD = 15, see fig. 10

g

Between lead,

V

= -160 V,

DS

see fig. 6 and 13

b

b

D

6 mm (0.25") from
package and center of
die contact

G

S

f = 1 MHz, open drain 0.6 - 3.7 

MOSFET symbol
showing the 
integral reverse

p -n junction diode

TJ = 25 °C, IS = -6.5 A, VGS = 0 V

D

G

S

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/WCase-to-Sink, Flat, Greased Surface R

- - 0.80 

2.8 - - S

- 700 -

--29

-12-

-27-

-4.5-

-7.5-

---6.5

---26

---6.5V

- 200 300 ns

-1.92.9μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

S16-0754-Rev. D, 02-May-16

2

Document Number: 91084

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

10

1

10

0

10

-1

10

0

10

1

- V, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width
T

C

= 150 °C

91084_02

- 4.5 V

10

-1

I

D

= - 6.5 A

V

GS

= - 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91084_04

- 60 - 40 - 20 0 20 40 6080100 120 140 160

1200

1000

800

600

0

200

400

10

0

10

1

Capacitance (pF)

- V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91084_05

QG, Total Gate Charge (nC)

- V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

5

25

2015

10

V

DS

= - 40 V

V

DS

= - 100 V

For test circuit
see figure 13

V

DS

= - 160 V

91084_06

ID = - 6.5 A

30

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width

= 25 °C

T

C

0

10

1

10

- VDS, Drain-to-Source Voltage (V)

- 4.5 V

1

10

0

10

, Drain Current (A)

D

- I

-1

10

10

91084_01

To p

Bottom

-1

IRF9630, SiHF9630

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

1

10

25 °C

150 °C

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

, Drain Current (A)

D

- I

91084_03

S16-0754-Rev. D, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

0

10

4

5678910

- V

GS

Gate-to-Source Voltage (V)

,

20 µs Pulse Width
V

= - 50 V

DS

Fig. 3 - Typical Transfer Characteristics

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91084

www.vishay.com

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

2

0.1

2

5

0.1

2

5

1

2

5

10

2

5

25

1

251025

10

2

25

10

3

91084_08

10

3

- I

D

, Drain Current (A)

TC, Case Temperature (°C)

0.0

1.0

2.0

3.0

4.0

5.0

91084_09

15025 1251007550

7.0

6.0

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

- 10 V

+

-

V

DS

V

DD

V

GS

10 %

90 %

V

DS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

Single Pulse
(Thermal Response)

0.2

0.05

0.02

0.01

91084_11

0.1

D = 0.5

1

10

IRF9630, SiHF9630

Vishay Siliconix

150 °C

0

10

25 °C

, Reverse Drain Current (A)

SD

- I

91084_07

-1

10

0.5

- VSD, Source-to-Drain Voltage (V)

V

= 0 V

GS

3.52.51.5

4.5

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 8 - Maximum Safe Operating Area

Fig. 10b - Switching Time Waveforms

S16-0754-Rev. D, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4

Document Number: 91084

IRF9630, SiHF9630

A

R

G

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

­V

DD

- 10 V

Var y tp to obtain
required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

1200

0

200

400

600

800

1000

Starting TJ, Junction Temperature (°C)

E

AS

, Single Pulse Energy (mJ)

Bottom

To p

I

D

- 2.9 A

- 4.1 A

- 6.5 A

VDD = - 50 V

91084_12c

25 150

125

10075

50

Q

GS

Q

GD

Q

G

V

G

Charge

- 10 V

www.vishay.com

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Vishay Siliconix

S16-0754-Rev. D, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

0.3 µF

D.U.T.

- 3 mA

I

G

Current sampling resistors

I

D

-

+

Fig. 13a - Basic Gate Charge Waveform Fig. 13c - Gate Charge Test Circuit

5

Document Number: 91084

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V

DS

www.vishay.com

P.W.

Period

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Body diode forward

current

Driver gate drive

Inductor current

D =

P.W.

Period

+

-

-

-

-

+

+

+

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

g

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

• Compliment N-Channel of D.U.T. for driver

V

DD

• I

SD

controlled by duty factor “D”

Note

Note

a. V

GS

= - 5 V for logic level and - 3 V drive devices

V

GS

= - 10 V

a

D.U.T. lSD waveform

D.U.T. V

DS

waveform

V

DD

Re-applied
voltage

Ripple ≤ 5 %

I

SD

Reverse
recovery
current

IRF9630, SiHF9630

Vishay Siliconix

Fig. 14 - For P-Channel











Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91084

S16-0754-Rev. D, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

.

6

For technical questions, contact: [e-mail]

Document Number: 91084

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M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16

1

Document Number: 91000