Datasheet IRF9540, SiHF9540 DataSheet (Vishay)

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

IRF9540, SiHF9540

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 100

()V

R

DS(on)

Q

(Max.) (nC) 61

g

Q

(nC) 14

gs

Q

(nC) 29

gd

Configuration Single

= - 10 V 0.20

GS

S

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

G

D

P-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF9540PbF
SiHF9540-E3
IRF9540
SiHF9540

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 13

T

C

DS

± 20

GS

I

D

IDM - 72
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt - 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= - 25 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = - 19 A (see fig. 12).

DD

c. I

 - 19 A, dI/dt  200 A/μs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91078 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

- 100

- 19

640 mJ

- 19 A
15 mJ

150 W

- 55 to + 175

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

A

°C

IRF9540, SiHF9540

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.0

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.087 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 11 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

- 590 -

oss

- 140 -

rss

g

--14

gs

--29

gd

d(on)

r

-34-

d(off)

-57-

f

D

S

Drain-Source Body Diode Characteristics

VGS = 0 V, ID = - 250 μA - 100 - -

VDS = VGS, ID = - 250 μA - 2.0 -

= ± 20 V - - ± 100

GS

VDS = - 100 V, VGS = 0 V - - - 100

V

= - 80 V, VGS = 0 V, TJ = 150 °C - - - 500

DS

VDS = - 50 V, ID = - 11 A

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.20

6.2 - -

- 1400 -

--61

= - 19 A, VDS = - 80 V,

I

V

GS

= - 10 V

D

see fig. 6 and 13

b

-16-

V

= - 50 V, ID = - 19 A,

DD

R

= 9.1 , RD = 2.4, see fig. 10

g

Between lead,
6 mm (0.25") from
package and center of
die contact

b

D

G

S

-73-

-4.5-

-7.5-

- 4.0 V

V

V/°C

nA

μA



S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IS = - 19 A, VGS = 0 V

TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

G

S

b

--- 19

--- 72

--- 5.0

- 130 260

b

- 0.35 0.70

A

V

ns

μC

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91078
2 S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

91078_01

20 µs Pulse Width
T

C

= 25 °C

- 4.5 V

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

10

0

10

1

10

2

10

1

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width
V

DS

= - 50 V

10

1

- I

D

, Drain Current (A)

- V

GS

,

Gate-to-Source Voltage (V)

5678

9

10

4

25 °C

175 °C

91078_03

I

D

= - 19 A

V

GS

= - 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91078_04

- 60- 40 - 20 0 20 40 6080100 120140 160

180

IRF9540, SiHF9540

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

, Drain Current (A)

D

- I

91078_02

Document Number: 91078 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

V

To p

Bottom

1

10

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width

= 175 °C

T

0

10

- V

Drain-to-Source Voltage (V)

,

DS

C

1

10

Fig. 2 - Typical Output Characteristics, T

This datasheet is subject to change without notice.

- 4.5 V

= 175 ° C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

www.vishay.com/doc?91000

IRF9540, SiHF9540

10

1

10

0

- VSD, Source-to-Drain Voltage (V)

- I

SD

, Reverse Drain Current (A)

1.0

5.0

4.03.02.0

25 °C

175 °C

V

GS

= 0 V

91078_07

0.0

Vishay Siliconix

3000

2500

2000

1500

1000

Capacitance (pF)

500

0

0

10

- V

Drain-to-Source Voltage (V)

91078_05

DS

,

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

C

C

C

1

10

iss

oss

rss

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

ID = - 19 A

V

= - 80 V

16

12

V

DS

V

= - 20 V

= - 50 V

DS

DS

8

, Gate-to-Source Voltage (V)

4

GS

- V

91078_06

0

10

3020

QG, Total Gate Charge (nC)

For test circuit
see figure 13

40

600

50

91078_08

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

10

5

2

2

10

5

2

10

5

2

, Drain Current (A)

D

1

- I

5

2

0.1

25

0.1

Fig. 8 - Maximum Safe Operating Area

Operation in this area limited

by R

DS(on)

100 µs

1 ms

10 ms

TC = 25 °C

= 175 °C

T

J

Single Pulse

1

25

10

25

2

2

10

- VDS, Drain-to-Source Voltage (V)

5

3

10

www.vishay.com Document Number: 91078
4 S11-0512-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

150

- I

D

, Drain Current (A)

TC, Case Temperature (°C)

0

4

8

12

16

20

25

91078_09

1251007550

175

V

GS

10 %

90 %

V

DS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

Single Pulse
(Thermal Response)

0.2

0.05

0.02

0.01

91078_11

0.1

D = 0.5

IRF9540, SiHF9540

Fig. 9 - Maximum Drain Current vs. Case Temperature

V

DS

V

GS

R

G

Vishay Siliconix

R

D

D.U.T.

-

+

V

DD

- 10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91078 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRF9540, SiHF9540

D.U.T.

- 3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

V

R

G

- 10 V

DS

Var y tp to obtain
required I

AS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

L

D.U.T

I

AS

t

p

0.01 Ω

2000

1600

­V

+

DD

To p

Bottom

V

I

AS

DS

I

D

- 7.8 A

- 13 A

- 19 A

V

t

p

V

DD

DS

- 10 V

V

1200

800

, Single Pulse Energy (mJ)

400

AS

E

91078_12c

VDD = - 25 V

0

25 150

50

125

10075

Starting TJ, Junction Temperature (°C)

175

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

G

Q

GS

G

Q

GD

Charge

www.vishay.com Document Number: 91078
6 S11-0512-Rev. B, 21-Mar-11

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF9540, SiHF9540

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

g

Note

• Compliment N-Channel of D.U.T. for driver

+

-

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

• dV/dt controlled by R

• I

controlled by duty factor “D”

SD

• D.U.T. - device under test

current transformer

-

g

+

Vishay Siliconix

+

V

DD

-

Reverse
recovery
current

Re-applied
voltage

Driver gate drive

P.W.

D.U.T. lSD waveform

D.U.T. V

DS

Inductor current

Note

= - 5 V for logic level and - 3 V drive devices

a. V

GS

Period

Body diode forward

current

waveform

Body diode forward drop

Ripple ≤ 5 %

Diode recovery

dV/dt

Fig. 14 - For P-Channel

dI/dt

D =

P.W.

Period

V

V

I

SD

GS

DD

= - 10 V

a

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91078

.

Document Number: 91078 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 13-Jun-16

1

Document Number: 91000