Page 1
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRF9510, SiHF9510
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 100
(Ω)V
R
DS(on)
Q
(Max.) (nC) 8.7
g
Q
(nC) 2.2
gs
Q
(nC) 4.1
gd
Configuration Single
= - 10 V 1.2
GS
S
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
G
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRF9510PbF
SiHF9510-E3
IRF9510
SiHF9510
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
C
T
= 100 °C - 2.8
C
DS
± 20
GS
I
D
IDM - 16
Linear Derating Factor 0.29 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt - 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= - 25 V, starting TJ = 25 °C, L = 18 mH, Rg = 25 Ω, IAS = - 4.0 A (see fig. 12).
b. V
DD
c. I
≤ - 4.0 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91072 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
- 100
- 4.0
200 mJ
- 4.0 A
4.3 mJ
43 W
- 55 to + 175
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
A
°C
Page 2
IRF9510, SiHF9510
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-3.5
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.091 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = - 10 V ID = - 2.4 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
-94-
oss
-18-
rss
g
--2.2
gs
--4.1
gd
d(on)
r
-15-
d(off)
-17-
f
D
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
VGS = 0 V, ID = - 250 μA - 100 - -
VDS = VGS, ID = - 250 μA - 2.0 -
= ± 20 V - - ± 100
GS
- 4.0 V
VDS = - 100 V, VGS = 0 V - - - 100
V
= - 80 V, VGS = 0 V, TJ = 150 °C - - - 500
DS
VDS = - 50 V, ID = - 2.4 A
VGS = 0 V,
V
= - 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
--1.2
1.0 - -
- 200 -
--8.7
= - 4.0 A, VDS = - 80 V,
I
V
GS
= - 10 V
D
see fig. 6 and 13
b
-10-
V
= - 50 V, ID = - 4.0 A,
DD
R
= 24 Ω, RD = 11 Ω, see fig. 10
g
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = - 4.0 A, VGS = 0 V
b
D
G
S
D
G
S
b
-27-
-4.5-
-7.5-
--- 4.0
--- 16
--- 5.5
-82160
b
- 0.15 0.30
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
V
V/°C
nA
μA
Ω
S
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
V
ns
μC
www.vishay.com Document Number: 91072
2 S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Page 3
- V
DS
,
Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
10
1
10
0
10
0
10
1
20 µs Pulse Width
T
C
= 175 °C
91072_02
- 4.5 V
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
IRF9510, SiHF9510
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
V
GS
To p
- 15 V
1
10
, Drain Current (A)
0
10
D
- I
91072_01
Fig. 1 - Typical Output Characteristics, TC = 25 °C
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom
- 4.5 V
0
10
- VDS, Drain-to-Source Voltage (V)
20 µs Pulse Width
= 25 °C
T
C
1
10
- 4.5 V
, Drain Current (A)
- I
91072_03
Vishay Siliconix
1
10
25 °C
175 °C
0
10
D
20 µs Pulse Width
V
= - 50 V
DS
4
5678910
- V
Gate-to-Source Voltage (V)
,
GS
Fig. 3 - Typical Transfer Characteristics
3.0
I
= - 4.0 A
D
= - 10 V
V
GS
2.5
2.0
1.5
(Normalized)
1.0
, Drain-to-Source On Resistance
0.5
DS(on)
0.0
R
- 60- 40 - 20 0 20 40 60 80 100 120140 160
T
Junction Temperature (°C)
91072_04
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 4 - Normalized On-Resistance vs. Temperature
,
J
180
Document Number: 91072 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 4
IRF9510, SiHF9510
QG, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
2
10
86
4
V
DS
= - 20 V
V
DS
= - 50 V
For test circuit
see figure 13
V
DS
= - 80 V
91072_06
ID = - 4.0 A
10
1
10
0
- VSD, Source-to-Drain Voltage (V)
- I
SD
, Reverse Drain Current (A)
1.0
5.0
4.03.0
2.0
25 °C
175 °C
V
GS
= 0 V
91072_07
10
-1
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
- VDS, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
TC = 25 °C
T
J
= 175 °C
Single Pulse
10
-2
10
2
0.1
2
5
0.1
2
5
1
2
5
10
2
5
25
1
251025
10
2
25
10
3
91072_08
Vishay Siliconix
350
280
210
140
Capacitance (pF)
70
0
0
10
- V
Drain-to-Source Voltage (V)
91072_05
DS
,
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
= 0 V, f = 1 MHz
GS
= Cgs + Cgd, Cds Shorted
C
iss
= C
C
rss
gd
C
= Cds + C
oss
gd
C
iss
C
oss
C
rss
1
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91072
4 S11-0506-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 5
150
- I
D
, Drain Current (A)
TC, Case Temperature (°C)
25
91072_09
1251007550
0.0
1.0
2.0
3.0
4.0
175
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1 1 10
P
DM
t
1
t
2
t1, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t
1/t2
2. Peak Tj = PDM x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
0.2
0.05
0.02
0.01
91072_11
0.1
D = 0.5
IRF9510, SiHF9510
Fig. 9 - Maximum Drain Current vs. Case Temperature
V
DS
V
GS
R
G
Vishay Siliconix
R
D
D.U.T.
-
+
V
DD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
10 %
90 %
V
t
t
d(on)
GS
DS
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91072 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 5
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 6
IRF9510, SiHF9510
Q
GS
Q
GD
Q
G
V
G
Charge
- 10 V
D.U.T.
- 3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
V
R
G
- 10 V
DS
Var y tp to obtain
required I
AS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
L
D.U.T
I
AS
t
p
0.01 Ω
700
600
500
400
V
+
DD
I
AS
V
To p
Bottom
DS
I
D
- 1.6 A
- 2.8 A
- 4.0 A
V
t
p
V
DD
DS
300
200
, Single Pulse Energy (mJ)
AS
100
E
91072_12c
VDD = - 25 V
0
25 150
50
125
10075
Starting TJ, Junction Temperature (°C)
175
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91072
6 S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Page 7
IRF9510, SiHF9510
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
-
R
g
Note
• Compliment N-Channel of D.U.T. for driver
+
-
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
• dV/dt controlled by R
• I
controlled by duty factor “D”
SD
• D.U.T. - device under test
current transformer
-
g
+
Vishay Siliconix
+
V
DD
-
Reverse
recovery
current
Re-applied
voltage
Driver gate drive
P.W.
D.U.T. lSD waveform
D.U.T. V
DS
Inductor current
Note
= - 5 V for logic level and - 3 V drive devices
a. V
GS
Period
Body diode forward
current
waveform
Body diode forward drop
Ripple ≤ 5 %
Diode recovery
dV/dt
Fig. 14 - For P-Channel
dI/dt
D =
P.W.
Period
V
V
I
SD
GS
DD
= - 10 V
a
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91072
.
Document Number: 91072 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Page 8
www.vishay.com
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
Package Information
Vishay Siliconix
TO-220-1
DIM.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 14-Dec-15
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ASE Xi’an
For technical questions, contact: hvm@vishay.com
Package Picture
1
Document Number: 66542
Page 9
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
1
Document Number: 91000
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