Datasheet SiHF8N50L DataSheet (Vishay)

www.vishay.com

N-Channel MOSFET

G

D

S

S

D

G

TO-220 FULLPAK

SiHF8N50L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max. 560

R

()V

DS(on)

Q

max. (nC) 34

g

Q

(nC) 7.8

gs

Q

(nC) 10.4

gd

Configuration Single

= 10 V 1

GS

FEATURES

• Low figure-of-merit Ron x Q

• 100 % avalanche tested

• Gate charge improved

•t

improved

rr/Qrr

• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

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ORDERING INFORMATION

Package TO-220 FULLPAK
Lead (Pb)-free SiHF8N50L-E3

g

Available

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

Notes

a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V
d. I
e. 1.6 mm from case.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current

Pulsed Drain Current

a

b

VGS at 10 V TC = 25 °C I

DS

± 30

GS

D

IDM 22

500

8

V

A

Linear Derating Factor 0.32 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

= 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 6 A.

DD

 8 A, dI/dt  460 A/μs, VDD  VDS, TJ  150 °C.

SD

c

= 25 °C P

d

e

C

for 10 s 300

E

AS

D

180 mJ

40 W

dV/dt 24 V/ns

, T

J

stg

-55 to +150
°C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

-65

-3.1

°C/W

S16-0859-Rev. B, 09-May-16

1

Document Number: 91387

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHF8N50L

S

D

G

www.vishay.com

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.5 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 4.0 A - 0.85 1 

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Input Resistance R

iss

- 105 -

oss

-11-

rss

g

-10.4-

gd

d(on)

r

-23.6-

d(off)

-17-

f

g

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current I

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Body Diode Reverse Recovery Current I

S

SM

SD

rr

rr

RRM

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 50

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

V

DS

VDS = 50 V, ID = 3 A - 2 - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz

V

= 10 V ID = 6 A, VDS = 400 V

GS

= 250 V, ID = 6 A

V

DD

R

= 14 VGS = 10 V

G

f = 1 MHz, open drain - 0.7 - 

MOSFET symbol

showing the

integral reverse

p - n junction diode

TJ = 25 °C, IS = 8 A, VGS = 0 V - - 1.5 V

TJ = 25 °C, IF = IS, dI/dt = 100 A/μs,

V

= 15 V

R

Vishay Siliconix

μA

- 873 -

pFOutput Capacitance C

-2234

nC Gate-Source Charge Qgs -7.8-

-17.3-

-35-

--8

--22

-63-ns

- 114 - nC

-3.3- A

ns

A

S16-0859-Rev. B, 09-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91387

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VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0

4

8

12

16

20

0 5 10 15 20 25 30

T

J

= 25 °C

VGS

TOP 15 V
14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V
BOTTOM 5.0 V

7.0 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0

3

6

9

12

0 5 10 15 20 25 30

7.0 V

T

J

= 150 °C

VGS

TOP 15 V
14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V
BOTTOM 5.0 V

TJ, Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

0

0.5

1

1.5

2

2.5

3

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

ID = 8 A

VGS = 10 V

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiHF8N50L

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

16

14

12

10

8

S16-0859-Rev. B, 09-May-16

6

4

, Drain-to-Source Current (A)

2

D

I

0

Fig. 3 - Typical Transfer Characteristics

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

TJ = 150 °C

5678910

VGS, Gate-to-Source Voltage (V)

Fig. 4 - Normalized On-Resistance vs. Temperature

1600

1200

800

C, Capacitance (pF)

400

C

rss

0

1 10 100 1000

VGS = 0 V, f = 1MHz
C
C
C

C

oss

= Cgs + Cgd Cds SHORTED

iss

= C

rss

gd

= Cds + C

oss

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

T

= 25 °C

J

20

ID = 8 A

16

12

8

4

, Gate-to-Source Voltage (V)

GS

V

0

0 5 10 15 20 25 30 35

V

DS

V

DS

V

DS

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

For technical questions, contact: [e-mail]

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gd

C

iss

= 400 V

= 250 V
= 100 V

Document Number: 91387

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0.1

1

10

100

10 100 1000 10 000

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10 ms

1 ms

100 µs

OPERATION IN THIS AREA

LIMITED BY R

DS(on)

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10 V

+

-

V

DS

V

DD

0.01

0.1

1

t , Rectangular Pulse Duration (s)

Normalized Transient Thermal Impedance (Z

thJC

)

1

0.0001 0.001 0.01 0.1 1

D = 0.50

0.20

0.10

0.05

0.02

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

100

SiHF8N50L

Vishay Siliconix

10

1

TJ = 150 °C

T

= 25 °C

J

, Reverse Drain Current (A)

SD

I

0.1

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

VGS = 0 V

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 9a - Switching Time Test Circuit

V

DS

90 %

10 %

V

GS

t

d(on)tr

t

d(off)tf

Fig. 9b - Switching Time Waveforms

Fig. 8 - Maximum Safe Operating Area

S16-0859-Rev. B, 09-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

For technical questions, contact: [e-mail]

4

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Document Number: 91387

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A

t

p

V

DS

I

AS

Q

GS

Q

GD

Q

G

V

G

Charge

V

GS

SiHF8N50L

Vishay Siliconix

Current regulator

Same type as D.U.T.

15 V

Driver

+

V

-

R

V

G

20 V

DS

L

D.U.T.

I

AS

0.01

t

p

Ω

Fig. 11a - Unclamped Inductive Test Circuit

Fig. 11b - Unclamped Inductive Waveforms

50 kΩ

12 V

A

DD

0.2 µF

V

GS

3 mA

0.3 µF

+

V

D.U.T.

I

G

I

D

DS

-

Current sampling resistors

Fig. 12b - Gate Charge Test Circuit

Fig. 12a - Basic Gate Charge Waveform

S16-0859-Rev. B, 09-May-16

5

Document Number: 91387

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

SiHF8N50L

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

-

D =

g

P.W.

Period

+

+

V

DD

-

= 10 Va

V

GS

D.U.T. l

Reverse
recovery
current

D.U.T. V

Re-applied
voltage

Inductor current

Note

a. V

waveform

SD

Body diode forward

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

current

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Fig. 13 - For N-Channel

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91387

S16-0859-Rev. B, 09-May-16

.

6

Document Number: 91387

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Disclaimer



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Revision: 13-Jun-16

1

Document Number: 91000