Datasheet IRF840LC, SiHF840LC DataSheet (Vishay)

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

IRF840LC, SiHF840LC

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

(Ω)V

R

DS(on)

Q

(Max.) (nC) 39

g

Q

(nC) 10

gs

Q

(nC) 19

gd

= 10 V 0.85

GS

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V V

• Reduced C

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

Configuration Single

D

DESCRIPTION

This new series of low charge Power MOSFETs achieve
signiticantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,

G

allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high

S

N-Channel MOSFET

current are possible using the new low charge MOSFETs.
These device improvements combined with the proven

ruggedness and reliability that are characteristic of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF840LCPbF
SiHF840LC-E3
IRF840LC
SiHF840LC

iss

, C

GS

oss

Rating

, C

rss

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

T

= 100 °C 5.1

C

DS

± 30

GS

I

D

IDM 28
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12).

DD

c. I

≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91067 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

8.0

510 mJ

8.0 A
13 mJ

125 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

A

°C

IRF840LC, SiHF840LC

Vishay Siliconix

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.0

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

ΔV

DS/TJ

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

-170-

oss

-18-

rss

g

--10

gs

--19

gd

d(on)

r

-27-

d(off)

-19-

f

D

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

VGS = 0 V, ID = 250 μA 500 - - V

Reference to 25 °C, I

= 1 mA

D

-0.63-

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

V

= 400V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 4.8 A

GS

VDS = 50 V, ID = 4.8 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.85 Ω

4.0 - - S

-1100-

--39

= 8.0 A, VDS = 400 V

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-12-

= 250 V, ID = 8.0 A,

V

DD

R

= 9.1 Ω, RD= 30 Ω

g

see fig. 10

b

G

G

TJ = 25 °C, IS = 8.0 A, VGS = 0 V

TJ = 25 °C, IF = 8.0 A,

dI/dt = 100 A/μs

b

D

S

D

S

b

-25-

-4.5-

-7.5-

--8.0

--28

--2.0V

- 490 740 ns

-3.04.5μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V/°C

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91067
2 S11-0506-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

91067_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

10

-1

10

-1

10

1

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 150 °C

91067_02

4.5 V

10

-1

I

D

= 8.0 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91067_04

- 60 - 40 - 20 0 20 40 60 80

100

120 140 160

IRF840LC, SiHF840LC

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

1

10

0

, Drain Current (A)

10

D

I

4

91067_03

Fig. 3 - Typical Transfer Characteristics

Vishay Siliconix

150 °C

25 °C

20 µs Pulse Width
V

= 50 V

DS

5678910

V

Gate-to-Source Voltage (V)

,

GS

Document Number: 91067 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics, T

This datasheet is subject to change without notice.

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

www.vishay.com/doc?91000

IRF840LC, SiHF840LC

2400

2000

1600

1200

0

400

800

10

0

10

1

Capacitance (pF)

V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91067_05

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

08 40322416

V

DS

= 100 V

V

DS

= 250 V

For test circuit
see figure 13

V

DS

= 400 V

91067_06

ID = 8.0 A

48

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

2

10

3

2

5

0.1

2

5

1

2

5

10

2

5

25

110

25

10

2

25

10

3

91067_08

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

150 °C

1

10

25 °C

, Reverse Drain Current (A)

SD

I

0

10

V

GS

0.6 1.41.21.00.8

91067_07

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

= 0 V

1.6

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91067
4 S11-0506-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

I

D

, Drain Current (A)

TC, Case Temperature (°C)

0.0

2.0

4.0

6.0

8.0

25 1501251007550

91067_09

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

Single Pulse
(Thermal Response)

0.2

0.05

0.02

0.01

91067_11

0.1

D = 0.5

IRF840LC, SiHF840LC

Fig. 9 - Maximum Drain Current vs. Case Temperature

V

DS

V

GS

R

G

Vishay Siliconix

R

D

D.U.T.

+

V

-

DD

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91067 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRF840LC, SiHF840LC

1200

0

200

400

600

800

1000

25 150

125

10075

50

Starting TJ, Junction Temperature (°C)

E

AS

, Single Pulse Energy (mJ)

Bottom

To p

I

D

3.6 A

5.1 A

8.0 A

VDD = 50 V

91067_12c

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

V

R

10 V

DS

G

Var y tp to obtain
required I

AS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

L

t

p

D.U.T.

I

AS

t

p

0.01 Ω

+

V

DD

-

V

DS

I

AS

V

DS

V

DD

www.vishay.com Document Number: 91067
6 S11-0506-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

10 V

V

Q

GS

G

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRF840LC, SiHF840LC

+

-

R

D.U.T.

g

Peak Diode Recovery dV/dt Test Circuit

+

-

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

g

+

Vishay Siliconix

+

V

DD

-

Reverse
recovery
current

Re-applied
voltage

Driver gate drive

P.W.

D.U.T. l

D.U.T. V

Inductor current

Note

a. V

waveform

SD

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Period

Body diode forward

current

dI/dt

Diode recovery

dV/dt

Fig. 14 - For N-Channel

D =

Period

P.W.

V

GS

V

DD

I

SD

= 10 Va

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91067

.

Document Number: 91067 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220AB

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183

b 0.69 1.01 0.027 0.040

b(1) 1.20 1.73 0.047 0.068

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.09 6.48 0.240 0.255

J(1) 2.41 2.92 0.095 0.115

L 13.35 14.02 0.526 0.552

L(1) 3.32 3.82 0.131 0.150

Ø P 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118

ECN: T13-0724-Rev. O, 14-Oct-13
DWG: 5471

Note

* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Oct-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions, contact: [e-mail]

1

Document Number: 71195

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000