Datasheet IRF820A, SiHF820A DataSheet (Vishay)

TO-220AB

G

D

S

Power MOSFET

IRF820A, SiHF820A

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

(Ω)V

R

DS(on)

Q

(Max.) (nC) 17

g

Q

(nC) 4.3

gs

Q

(nC) 8.5

gd

Configuration Single

= 10 V 3.0

GS

D

FEATURES

• Low Gate Charge Qg Results in Simple Drive
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage
and current

• Effective C

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

G

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

S

N-Channel MOSFET

• Two Transistor Forward

• Half bridge

• Full bridge

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF820APbF
SiHF820A-E3
IRF820A
SiHF820A

Specified

oss

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 1.6

C

DS

± 30

GS

I

D

IDM 10
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 3.4 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.

= 25 °C, L = 45 mH, Rg = 25 Ω, IAS = 2.5 A (see fig. 12).

J

≤ 2.5 A, dI/dt ≤ 270 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91057 www.vishay.com
S11-0507-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

2.5

140 mJ

2.5 A

5.0 mJ
50 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

AT

°C

IRF820A, SiHF820A

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-2.5

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

-53-

oss

-2.7-

rss

V

oss

V

oss

eff. VGS = 0 V; VDS = 0 V to 400 V

oss

g

--4.3

gs

--8.5

gd

d(on)

r

-16-

d(off)

-13-

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

VGS = 0 V, ID = 250 μA 500 - -

VDS = VGS, ID = 250 μA 2.0 -

= ± 30 V - - ± 100 nA

GS

4.5 V

VDS = 500 V, VGS = 0 V - - 25

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 1.5 A

GS

VDS = 50 V, ID = 1.5 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 0 V; VDS = 1.0 V, f = 1.0 MHz 490

GS

= 0 V; VDS = 400 V, f = 1.0 MHz 15

GS

b

b

--3.0Ω

1.4 - - S

- 340 -

c

28

--17

= 2.5 A, VDS = 400 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-8.1-

V

= 250 V, ID = 2.5 A,

DD

R

= 21 Ω, RD = 97 Ω, see fig. 10

g

b

-12-

--2.5

--10

TJ = 25 °C, IS = 2.5 A, VGS = 0 V

b

--1.6V

- 330 500 ns

b

- 760 1140 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

V

V/°C

μA

pF

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91057
2 S11-0507-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

91057_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

J

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

10 10

2

10

0.1

10

-2

1

0.1

1

20 µs Pulse Width
V

DS

= 50 V

10

1

10

-2

I

D

, Drain-to-Source Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5.0 6.0 7.0 8.0 9.0

4.0

91057_03

TJ = 25 °C

TJ = 150 °C

0.1

IRF820A, SiHF820A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

10

1

, Drain-to-Source Current (A)

D

I

0.1

91057_02

Fig. 2 - Typical Output Characteristics, T

To p

Bottom

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

101

V

Drain-to-Source Voltage (V)

,

DS

4.5 V

20 µs Pulse Width

= 150 °C

T

J

= 150 °C

C

3.0
I

= 2.5 A

D

= 10 V

V

GS

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

2

10

91057_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91057 www.vishay.com
S11-0507-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRF820A, SiHF820A

10

2

10

4

1

C, Capacitance (pF)

V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91057_05

10

3

10

2

10

110 10

3

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

20

15

10

5

0

04 16128

V

DS

= 100 V

V

DS

= 250 V

For test circuit
see figure 13

V

DS

= 400 V

91057_06

ID = 2.5 A

10

1

VSD, Source-to-Drain Voltage (V)

I

SD

, Reverse Drain Current (A)

0.4

1.2

1.00.80.6

V

GS

= 0 V

91057_07

TJ = 25 °C

TJ = 150 °C

0.1

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

2

0.1

1

10

10 10

2

10

3

10

4

91057_08

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91057
4 S11-0507-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

I

D

, Drain Current (A)

TC, Case Temperature (°C)

0.5

1.0

1.5

2.0

2.5

3.0

25 1501251007550

91054_09

0.0

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1

P

DM

t

1

t

2

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

Single Pulse
(Thermal Response)

D = 0.50

0.20

0.05

0.02

0.01

91057_11

0.10

IRF820A, SiHF820A

Fig. 9 - Maximum Drain Current vs. Case Temperature

V

DS

V

GS

R

G

Vishay Siliconix

R

D

D.U.T.

+

V

-

DD

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Document Number: 91057 www.vishay.com
S11-0507-Rev. B, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

IRF820A, SiHF820A

R

G

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

A

10 V

Var y tp to obtain
required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

300

0

50

100

150

200

250

25 150

125

10075

50

Starting TJ, Junction Temperature (°C)

E

AS

, Single Pulse Avalanche Energy (mJ)

Bottom

To p

I

D

1.1 A

1.6 A

2.5 A

91057_12c

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit

Q

10 V

Q

GS

V

G

Fig. 12d - Basic Gate Charge Waveform

700

G

Q

GD

Charge

www.vishay.com Document Number: 91057
6 S11-0507-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

This datasheet is subject to change without notice.

650

600

, Avalanche Voltage (V)

DSav

V

550

91057_12d

0.0 2.5

0.5

IAV, Avalanche Current (A)

1.51.0

Fig. 13a - Typical Drain-to-Source Voltage vs.

Avalanche Current

Fig. 13b - Gate Charge Test Circuit

www.vishay.com/doc?91000

2.0

IRF820A, SiHF820A

+

-

R

g

D.U.T.

Peak Diode Recovery dV/dt Test Circuit

+

-

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

g

+

Vishay Siliconix

+

V

DD

-

Reverse
recovery
current

Re-applied
voltage

Driver gate drive

P.W.

D.U.T. l

D.U.T. V

Inductor current

Note

a. V

waveform

SD

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Period

Body diode forward

current

dI/dt

Diode recovery

dV/dt

Fig. 14 - For N-Channel

D =

Period

P.W.

V

GS

V

DD

I

SD

= 10 Va

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91057

.

Document Number: 91057 www.vishay.com
S11-0507-Rev. B, 21-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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Revision: 13-Jun-16

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Document Number: 91000