Page 1
TO-220AB
G
D
S
Power MOSFET
IRF740LC, SiHF740LC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 400
(Ω)V
R
DS(on)
Q
(Max.) (nC) 39
g
Q
(nC) 10
gs
Q
(nC) 19
gd
Configuration Single
= 10 V 0.55
GS
D
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
G
improvements are achieved without added product cost,
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
S
N-Channel MOSFET
frequency applications. Frequencies of a few MHz at high
current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs ofter the designer a new standard in power
transistors for switching applications.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRF740LCPbF
SiHF740LC-E3
IRF740LC
SiHF740LC
iss
, C
GS
oss
Rating
, C
rss
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 6.3
T
C
DS
± 30
GS
I
D
IDM 32
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 4.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12).
DD
c. I
≤ 10 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91053 www.vishay.com
S11-0507-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
400
10
520 mJ
10 A
13 mJ
125 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
A
°C
Page 2
IRF740LC, SiHF740LC
D
S
G
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-1.0
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.76 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
- 190 -
oss
-18-
rss
g
--10
gs
--19
gd
d(on)
r
-25-
d(off)
-20-
f
D
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
VGS = 0 V, ID = 250 μA 400 - -
VDS = VGS, ID = 250 μA 2.0 -
= ± 20 V - -
GS
VDS = 400 V, VGS = 0 V - -
= 320 V, VGS = 0 V, TJ = 125 °C - -
V
DS
= 10 V ID = 6.0 A
GS
VDS = 50 V, ID = 6.0 A
VGS = 0 V,
= 25 V,
V
DS
b
b
--
3.0 - -
- 1100 -
f = 1.0 MHz, see fig. 5
--39
= 10 A, VDS = 320 V
I
V
GS
= 10 V
D
see fig. 6 and 13
b
-11-
= 200 V, ID = 10 A ,
V
DD
R
= 9.1 Ω, RD = 20 Ω, see fig. 10
g
b
-31-
-4.5-
-7.5-
4.0 V
± 100 nA
25
250
0.55 Ω
V
V/°C
μA
S
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IS = 10 A, VGS = 0 V
b
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
--10
--32
--
-
b
380 570 ns
-
2.8 4.2 μC
A
2.0 V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com Document Number: 91053
2 S11-0507-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 3
10
1
10
0
10
-1
10
0
10
1
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 150 °C
91053_02
4.5 V
10
-2
10
-2
10
-1
IRF740LC, SiHF740LC
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
V
To p
1
10
0
10
Bottom
, Drain Current (A)
-1
10
D
I
-2
10
-2
10
91053_01
Fig. 1 - Typical Output Characteristics, TC = 25 °C
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
= 25 °C
T
C
-1
10
0
10
10
VDS, Drain-to-Source Voltage (V)
4.5 V
1
91053_03
1
10
150 °C
0
10
25 °C
-1
10
, Drain Current (A)
D
I
-2
10
4
5678910
V
Gate-to-Source Voltage (V)
,
GS
Fig. 3 - Typical Transfer Characteristics
Vishay Siliconix
20 µs Pulse Width
= 50 V
V
DS
3.0
I
= 10 A
D
= 10 V
V
GS
2.5
2.0
1.5
(Normalized)
1.0
, Drain-to-Source On Resistance
0.5
DS(on)
0.0
R
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
Junction Temperature (°C)
91053_04
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 4 - Normalized On-Resistance vs. Temperature
,
J
Document Number: 91053 www.vishay.com
S11-0507-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 4
IRF740LC, SiHF740LC
2000
1600
1200
800
0
400
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= Cgs + Cgd, Cds Shorted
C
rss
= C
gd
C
oss
= Cds + C
gd
91053_05
QG, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
6
30
2418
12
V
DS
= 80 V
V
DS
= 200 V
For test circuit
see figure 13
V
DS
= 320 V
91053_06
ID = 11 A
42
36
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
150 °C
1
10
25 °C
, Reverse Drain Current (A)
SD
I
0
10
91053_07
0.6
VSD, Source-to-Drain Voltage (V)
1.21.00.8
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1.4
V
= 0 V
GS
1.6 1.8
3
10
5
2
2
10
5
2
10
5
2
, Drain Current (A)
D
1
I
5
2
0.1
1
91053_08
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com Document Number: 91053
4 S11-0507-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
Fig. 8 - Maximum Safe Operating Area
Operation in this area limited
by R
DS(on)
TC = 25 °C
= 150 °C
T
J
25
Single Pulse
25
10
2
10
VDS, Drain-to-Source Voltage (V)
www.vishay.com/doc?91000
10 µs
100 µs
1 ms
10 ms
25
10
3
Page 5
I
D
, Drain Current (A)
TC, Case Temperature (°C)
0
2
4
6
8
10
25 150
125
1007550
91053_09
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1 1 10
P
DM
t
1
t
2
t1, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t
1/t2
2. Peak Tj = PDM x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
0 − 0.5
0.2
0.05
0.02
0.01
91053_11
0.1
IRF740LC, SiHF740LC
Fig. 9 - Maximum Drain Current vs. Case Temperature
V
DS
V
GS
R
G
Vishay Siliconix
R
D
D.U.T.
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91053 www.vishay.com
S11-0507-Rev. B, 21-Mar-11 5
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 6
IRF740LC, SiHF740LC
R
G
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
A
10 V
Var y tp to obtain
required I
AS
1200
0
200
400
600
800
1000
25 150
125
100
7550
Starting TJ, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
4.5 A
6.3 A
10 A
VDD = 50 V
91053_12c
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
V
DS
t
p
V
DS
I
AS
V
DD
www.vishay.com Document Number: 91053
6 S11-0507-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Q
10 V
V
Q
GS
G
G
Q
GD
Charge
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
Page 7
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 V*
V
DD
I
SD
Driver gate drive
D.U.T. I
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
* V
GS
= 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by duty factor "D"
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
G
IRF740LC, SiHF740LC
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91053
.
Document Number: 91053 www.vishay.com
S11-0507-Rev. B, 21-Mar-11 7
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 8
www.vishay.com
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
Package Information
Vishay Siliconix
TO-220-1
DIM.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 14-Dec-15
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ASE Xi’an
For technical questions, contact: hvm@vishay.com
Package Picture
1
Document Number: 66542
Page 9
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
1
Document Number: 91000
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