Datasheet IRF640S, SiHF640S, SiHF640L DataSheet (Vishay)

www.vishay.com

N-Channel MOSFET

G

D

S

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRF640S, SiHF640S, SiHF640L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 200

R

()V

DS(on)

Q

max. (nC) 70

g

Q

(nC) 13

gs

Q

(nC) 39

gd

Configuration Single

= 10 V 0.18

GS

FEATURES

• Surface mount

• Low-profile through-hole

• Available in tape and reel

Available

• Dynamic dV/dt rating

• 150 °C operating temperature

Available

• Fast switching

• Fully avalanche rated

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.





DESCRIPTION

Third generation power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the last lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (SiHF640L) is available for low-profile
applications.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF640S-GE3 SiHF640STRL-GE3
Lead (Pb)-free IRF640SPbF IRF640STRLPbF

Note

a. See device orientation.

a

SiHF640STRR-GE3

a

IRF640STRRPbF

a

a

SiHF640L-GE3

-

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a, e

at 10 V

GS

C

= 100 °C 11

C

DS

± 20

GS

I

D

IDM 72

Linear Derating Factor 1.0 W/°C

c, e

b, e

a

T

= 25 °C

C

= 25 °C 3.1

T

A

Single Pulse Avalanche Energy
Avalanche Current

a

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)

d

for 10 s 300

E

AS

I

AR

E

AR

P

D

dV/dt 5.0 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12).

DD

c. I

 18 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. Uses IRF640, SiHF640 data and test conditions.

S16-0014-Rev. E, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

1

200

18

580 mJ

18 A
13 mJ

130

-55 to +150

Document Number: 91037

V

AT

W

°C

IRF640S, SiHF640S, SiHF640L

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient 
(PCB mounted, steady-state)

a

Maximum Junction-to-Case (Drain) R

R

thJA

thJC

-40

-1.0

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 11 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Input Resistance R

iss

- 430 -

oss

- 130 -

rss

g

--13

gs

--39

gd

d(on)

r

-45-

d(off)

-36-

f

g

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p - n junction diode

TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRF640/SiHF640 data and test conditions.

VGS = 0 V, ID = 250 μA 200 - - V

c

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 200 V, VGS = 0 V - - 25

= 160 V, VGS = 0 V, TJ = 125 °C - - 250

V

DS

VDS = 50 V, ID = 11 A

b

d

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 18 A, VDS = 160 V,

I

V

= 10 V

GS

V

R

= 9.1 , RD = 5.4 , see fig. 10

g

D

see fig. 6 and 13

= 100 V, ID = 18 A,

DD

d

b, c

b, c

f = 1 MHz, open drain 0.5 - 3.6 

TJ = 25 °C, IS = 18 A, VGS = 0 V

b

b, c

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

-0.29-V/°C

- - 0.18 

6.7 - - S

- 1300 -

--70

-14-

-51-

--18

--72

--2.0V

- 300 610 ns

-3.47.1μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

A

S16-0014-Rev. E, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91037

IRF640S, SiHF640S, SiHF640L

I

D

= 18 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91037_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

3000

2500

2000

1500

0

500

1000

10

0

10

1

Capacitance (pF)

V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91037_05

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

15

75

6045

30

V

DS

= 40 V

V

DS

= 100 V

For test circuit
see figure 13

V

DS

= 160 V

91037_06

ID = 18 A

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

= 25 °C

T

C

0

10

1

10

VDS, Drain-to-Source Voltage (V)

4.5 V

1

10

, Drain Current (A)

D

0

I

10

10

91037_01

To p

Bottom

-1

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TJ = 25 °C

V

To p

1

10

Bottom

, Drain Current (A)

D

0

I

10

-1

10

91037_02

Fig. 2 - Typical Output Characteristics, T

1

10

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

0

10

V

Drain-to-Source Voltage (V)

,

DS

150 °C

4.5 V

20 µs Pulse Width

= 150 °C

T

C

1

10

= 175 °C

J

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

, Drain Current (A)

D

I

91037_03

S16-0014-Rev. E, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

25 °C

0

10

10

-1

4

5678910

V

Gate-to-Source Voltage (V)

,

GS

20 µs Pulse Width
V

= 50 V

DS

Fig. 3 - Typical Transfer Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91037

1

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

2

0.1

2

5

0.1

2

5

1

2

5

10

2

5

25

1

25

10

25

10

2

2

5

10

3

91037_08

10

3

I

D

, Drain Current (A)

TC, Case Temperature (°C)

0

4

8

12

16

20

25 1501251007550

91037_09

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

Single Pulse
(Thermal Response)

0 − 0.5

0.2

0.1

0.05

0.02

0.01

91037_11

10

-3

10

, Reverse Drain Current (A)

0

10

SD

I

0.50

91037_07

www.vishay.com

150 °C

25 °C

1.100.900.70

VSD, Source-to-Drain Voltage (V)

V

1.30

IRF640S, SiHF640S, SiHF640L

Vishay Siliconix

= 0 V

GS

1.50

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

S16-0014-Rev. E, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4

Document Number: 91037

www.vishay.com

1400

0

400

600

800

1000

1200

25 150

125

10075

50

Starting TJ, Junction Temperature (°C)

E

AS

, Single Pulse Energy (mJ)

Bottom

To p

I

D

8.0 A

11.0 A

18.0 A

VDD = 50 V

91037_12c

200

Q

GS

Q

GD

Q

G

V

G

Charge

10 V

IRF640S, SiHF640S, SiHF640L

Vishay Siliconix

15 V

Driver

+

V

-

R

V

g

20 V

DS

L

D.U.T.

I

AS

t

0.01 Ω

p

Fig. 12a - Unclamped Inductive Test Circuit

V

DS

t

p

I

AS

Fig. 12b - Unclamped Inductive Waveforms

A

DD

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

0.3 µF

D.U.T.

3 mA

I

G

Current sampling resistors

I

D

+

V

DS

-

Fig. 13b - Gate Charge Test Circuit

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

S16-0014-Rev. E, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

5

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 91037

www.vishay.com

IRF640S, SiHF640S, SiHF640L

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

-

D =

g

P.W.

Period

+

+

V

DD

-

= 10 Va

V

GS

D.U.T. l

Reverse
recovery
current

D.U.T. V

Re-applied
voltage

Inductor current

Note

a. V

waveform

SD

Body diode forward

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

current

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Fig. 14 - For N-Channel











Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91037

S16-0014-Rev. E, 18-Jan-16

.

6

Document Number: 91037

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-263AB (HIGH VOLTAGE)

(Datum A)

34

E

L1

4

D

L2

4

C

1

B

B

C

3

2

B

B

Package Information

Vishay Siliconix

A

A

5

H

Detail A

B

A

c2

Gauge
plane

0° to 8°

L

L3

L4

Detail “A”
Rotated 90° CW
scale 8:1

H

B

Seating plane

A1

2 x e

Lead tip

2 x b2

2 x b

0.010 A B

MM

Plating

(c)

Section B - B and C - C

c

± 0.004 B

5

b1, b3

(b, b2)

Scale: none

M

Base
metal

c1

A

E

D1

4

5

E1

View A - A

4

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1

I2PAK (TO-262) (HIGH VOLTAGE)

(Datum A)

E

L1

Package Information

Vishay Siliconix

A

A

B

c2

A

E

D

L2

0.010 A B

Lead tip

B

2 x e

M

Seating

plane

C

C

B

M

3 x b2

3 x b

L

A1

A

E1

Section A - A

Plating

c

b1, b3

(b, b2)

Section B - B and C - C

Scale: None

c

D1

Base
metal

c1

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380

A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -

b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420

b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -

b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC

b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065

c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146

c2 1.14 1.65 0.045 0.065

ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.

3. Thermal pad contour optional within dimension E, L1, D1, and E1.

4. Dimension b1 and c1 apply to base metal only.

Document Number: 91367 www.vishay.com
Revision: 27-Oct-08 1

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Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 13-Jun-16

1

Document Number: 91000