Datasheet IRF630S, SiHF630S DataSheet (Vishay)

K

D2PAK (TO-263)

S

D

G

Power MOSFET

IRF630S, SiHF630S

Vishay Siliconix

Note

a. See device orientation.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91032
S11-1047-Rev. C, 30-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PRODUCT SUMMARY

VDS (V) 200

R

()V

DS(on)

Q

(Max.) (nC) 43

g

Q

(nC) 7.0

gs

Q

(nC) 23

gd

Configuration Single

= 10 V 0.40

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

D

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

G

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

2

PAK is a surface mount power package capable of

S

N-Channel MOSFET

The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The

2

PAK is suitable for high current applications because of

D
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3

Lead (Pb)-free

IRF630SPbF IRF630STRLPbF

SiHF630S-E3 SiHF630STL-E3

a

a

a

SiHF630STRR-GE3

IRF630STRRPbF

SiHF630STR-E3

a

a

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 5.7

C

DS

± 20

GS

I

D

IDM 36

Linear Derating Factor 0.59

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

e

b

a

a

= 25 °C

C

e

c

TA = 25 °C 3.0

E

AS

I

AR

E

AR

P

D

dV/dt 5.0 V/ns

200

9.0

0.025

W/°C

250 mJ

9.0 A

7.4 mJ

74

V

AT

W

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This document is subject to change without notice.

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IRF630S, SiHF630S

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12).

DD

c. I

 9.0 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient
(PCB Mount)

c

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain)

R

thJA

thJA

R

thJC

--40

--62

--1.7

, T

J

stg

- 55 to + 150

d

°C/W

°C

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient

V

DS

V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

DS

DS/TJ

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

-240-

oss

-76-

rss

g

--7.0

gs

--23

gd

d(on)

r

-39-

d(off)

-20-

f

D

V

Between lead,
6 mm (0.25") from
package and center of

S

die contact

VGS = 0, ID = 250 μA 200 - - V

Reference to 25 °C, I

= 1 mA

D

-0.24-

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 200 V, VGS = 0 V - - 25

V

= 160V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 5.4 A

GS

VDS = 50 V, ID = 5.4 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.40 

3.8 - - S

-800-

--43

= 5.9 A, VDS = 160 V

I

= 10 V

GS

D

see fig. 6 and 13

b

-9.4-

= 100 V, ID = 5.9 A

V

DD

R

= 12 , RD= 16 

g

see fig. 10

b

D

G

S

-28-

-4.5-

-7.5-

V/°C

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

www.vishay.com Document Number: 91032
2 S11-1047-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

S

D

G

IRF630S, SiHF630S

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol
showing the
integral reverse

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IS = 9.0 A, VGS = 0 V

TJ = 25 °C, IF = 5.9 A,

dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).

b

b

--9.0

--36

--2.0V

- 170 340 ns

-1.12.2μC

A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

V

To p

1

10

Bottom

0

10

, Drain Current (A)

D

I

-1

10

-1

10

91032_01

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

= 25 °C

T

C

0

10

1

10

VDS, Drain-to-Source Voltage (V)

4.5 V

91032_02

To p

1

10

Bottom

0

10

, Drain Current (A)

D

I

-1

10

-1

10

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

0

10

V

Drain-to-Source Voltage (V)

,

DS

4.5 V

20 µs Pulse Width

= 150 °C

T

C

1

10

Document Number: 91032 www.vishay.com
S11-1047-Rev. C, 30-May-11 3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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IRF630S, SiHF630S

20 µs Pulse Width
V

DS

= 50 V

10

1

10

0

10

-1

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

150 °C

91032_03

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

10

50

4030

20

For test circuit
see figure 13

91032_06

ID = 5.9 A

V

DS

= 160 V

V

DS

= 40 V

V

DS

= 100 V

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

3.0
I

= 5.9 A

D

V

= 10 V

GS

2.5

1600

1200

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

C

iss

800

C

Capacitance (pF)

400

0

0

10

91032_05

V

Drain-to-Source Voltage (V)

,

DS

oss

C

rss

1

10

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

91032_04

Fig. 4 - Normalized On-Resistance vs. Temperature

,

J

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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4 S11-1047-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

10

1

10

0

VSD, Source-to-Drain Voltage (V)

I

SD

, Reverse Drain Current (A)

0.5

1.3

1.10.90.7

25 °C

150 °C

V

GS

= 0 V

91032_07

1.5

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

3

10

2

0.1

2

5

0.1

2

5

1

2

5

10

2

5

25

1

25

10

25

10

2

25

10

3

25

10

4

91032_08

I

D

, Drain Current (A)

TC, Case Temperature (°C)

0

2

4

6

8

10

25 1501251007550

91032_09

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

IRF630S, SiHF630S

Vishay Siliconix

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

R

D.U.T.

D

+

V

-

DD

V

DS

V

GS

R

g

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

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S11-1047-Rev. C, 30-May-11 5

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

IRF630S, SiHF630S

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

Single Pulse
(Thermal Response)

0 − 0.5

0.2

0.1

0.05

0.02

0.01

91032_11

Vishay Siliconix

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

L

V

Var y tp to obtain
required I

AS

DS

t

p

R

g

D.U.T.

I

AS

+

V

DD

-

V

DS

10 V

t

p

0.01 Ω

I

AS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

600

500

400

300

To p

Bottom

I

D

4.0 A

5.7 A

9.0 A

V

DS

V

DD

200

, Single Pulse Energy (mJ)

100

AS

E

91032_12c

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

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6 S11-1047-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

VDD = 50 V

0

25 150

50

10075

Starting TJ, Junction Temperature (°C)

This document is subject to change without notice.

125

www.vishay.com/doc?91000

Q

GS

Q

GD

Q

G

V

G

Charge

10 V

IRF630S, SiHF630S

Vishay Siliconix

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

3 mA

0.3 µF

D.U.T.

+

V

DS

-

Fig. 13a - Basic Gate Charge Waveform

D.U.T.

+

-

R

g

Driver gate drive

P.W.

Fig. 13b - Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

-

Period

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

•

I

controlled by duty factor “D”

SD

• D.U.T. - device under test

D =

g

P.W.

Period

+

V

GS

Current sampling resistors

+

V

DD

-

= 10 Va

I

G

I

D

D.U.T. l

waveform

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. V

Inductor current

Note

= 5 V for logic level devices

a. V

GS

Body diode forward

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

current

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91032

.

Document Number: 91032 www.vishay.com
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TO-263AB (HIGH VOLTAGE)

(Datum A)

34

E

L1

4

D

L2

4

C

1

B

B

C

3

2

B

B

Package Information

Vishay Siliconix

A

A

5

H

Detail A

B

A

c2

Gauge
plane

0° to 8°

L

L3

L4

Detail “A”
Rotated 90° CW
scale 8:1

H

B

Seating plane

A1

2 x e

Lead tip

2 x b2

2 x b

0.010 A B

MM

Plating

(c)

Section B - B and C - C

c

± 0.004 B

5

b1, b3

(b, b2)

Scale: none

M

Base
metal

c1

A

E

D1

4

5

E1

View A - A

4

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1

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Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 13-Jun-16

1

Document Number: 91000