Datasheet IRF620S, SiHF620S DataSheet (Vishay)

Power MOSFET

IRF620S, SiHF620S

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 200

R

()V

DS(on)

Q

(Max.) (nC) 14

g

Q

(nC) 3.0

gs

Q

(nC) 7.9

gd

Configuration Single

D2PAK (TO-263)

= 10 V 0.80

GS

D

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Simple Drive Requirements

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

G

ruggedized device design, low on-resistance and
cost-effectiveness.

2

The D

PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

D

G

S

N-Channel MOSFET

S

the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The

2

D

PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF620S-GE3 SiHF620STRL-GE3

Lead (Pb)-free

IRF620SPbF IRF620STRLPbF
SiHF620S-E3 SiHF620STL-E3

Note

a. See device orientation.

a

a

a

SiHF620STRR-GE3
IRF620STRRPbF
SiHF620STR-E3

a

a

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

T

= 100 °C 3.3

C

DS

± 20

GS

I

D

IDM 18
Linear Derating Factor 0.40
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current

a

Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

e

b

a

= 25 °C

e

c

C

TA = 25 °C 3.0

E

AS

I

AR

E

AR

P

D

dV/dt 5.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 6.1 mH, Rg = 25 , IAS = 5.2 A (see fig. 12).

DD

c. I

 5.2 A, dI/dt  95 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91028

www.vishay.com

S11-1046-Rev. D, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

200

5.2

0.025
110 mJ

5.2 A

5.0 mJ
50

- 55 to + 150

d

www.vishay.com/doc?91000

V

A

W/°C

W

°C

D

S

G

IRF620S, SiHF620S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Dynamic

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91028
2 S11-1046-Rev. D, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 3.1 A

DS(on)

fs

iss

- 100 -

oss

-30-

rss

g

--3.0

gs

--7.9

gd

d(on)

r

-19-

d(off)

-13-

f

D

V

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs

This document is subject to change without notice.

-62

-40

°C/W

-2.5

VGS = 0, ID = 250 μA 200 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 200 V, VGS = 0 V - - 25

= 160 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 3.1 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.80 

1.5 - - S

- 260 -

--14

= 4.8 A, VDS = 160 V,

I

= 10 V

D

see fig. 6 and 13

b

-7.2-

V

= 100 V, ID = 4.8 A,

DD

= 18 , RD = 20 , see fig. 10

g

b

-22-

-4.5-

-7.5-

G

TJ = 25 °C, IS = 5.2 A, VGS = 0 V

D

S

b

--5.2

--18

--1.8V

- 150 300 ns

b

- 0.91 1.8 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

91028_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

10

-1

10

-2

10

-2

10

-1

10

1

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

4.5 V

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 150 °C

91028_02

10

-2

10

-1

20 µs Pulse Width
V

DS

= 50 V

10

1

10

0

10

-1

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

150 °C

91028_03

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF620S, SiHF620S

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

3.0
I

= 4.8 A

D

= 10 V

V

GS

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120

T

Junction Temperature (°C)

91028_04

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

140

160

Document Number: 91028 www.vishay.com
S11-1046-Rev. D, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRF620S, SiHF620S

750

600

450

0

150

300

10

0

10

1

Capacitance (pF)

V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91028_05

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

315

9

ID = 4.8 A

V

DS

= 40 V

V

DS

= 100 V

For test circuit
see figure 13

V

DS

= 160 V

91028_06

12

6

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

2

0.1

2

5

0.1

1

2

5

10

2

5

25

110

25

10

2

25

10

3

25

91028_08

Vishay Siliconix

1

10

150 °C

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

0

10

25 °C

, Reverse Drain Current (A)

SD

I

V

91028_07

0.5

VSD, Source-to-Drain Voltage (V)

1.31.00.8

Fig. 7 - Typical Source-Drain Diode Forward Voltage

= 0 V

GS

1.5

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com Document Number: 91028
4 S11-1046-Rev. D, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

Fig. 8 - Maximum Safe Operating Area

www.vishay.com/doc?91000

I

D

, Drain Current (A)

TC, Case Temperature (°C)

0.0

1.0

2.0

3.0

4.0

5.0

25 1501251007550

91028_09

6.0

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

IRF620S, SiHF620S

Vishay Siliconix

R

D.U.T.

D

+

V

-

DD

V

DS

V

GS

R

g

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

10

)

thJC

Thermal Response (Z

91028_11

0 − 0.5

1

0.2

0.1

0.05

0.1

0.02

0.01

-2

10

-5

10

Single Pulse
(Thermal Response)

-4

10

-3

10

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10b - Switching Time Waveforms

P

DM

t

1

t

1/t2

thJC

2

+ T

C

Notes:

1. Duty Factor, D = t

2. Peak Tj = PDM x Z

-2

10

0.1 1 10

Document Number: 91028 www.vishay.com
S11-1046-Rev. D, 30-May-11 5

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF620S, SiHF620S

R

g

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

10 V

Var y t

p

to obtain

required I

AS

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

V

DS

t

p

V

DS

I

AS

V

DD

10 V

300

250

200

150

100

, Single Pulse Energy (mJ)

50

AS

E

91028_12c

VDD = 50 V

0

25 150

50

Starting TJ, Junction Temperature (°C)

To p

Bottom

10075

125

I

D

2.3 A

3.3 A

5.2 A

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

G

Q

GS

Q

GD

V

G

Charge

www.vishay.com Document Number: 91028
6 S11-1046-Rev. D, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

This document is subject to change without notice.

www.vishay.com/doc?91000

IRF620S, SiHF620S

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

-

D =

g

P.W.

Period

+

+

V

DD

-

= 10 Va

V

GS

waveform

D.U.T. l

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. V

Inductor current

Note

a. V

waveform

DS

= 5 V for logic level devices

GS

Body diode forward

current

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Ripple ≤ 5 %

V

DD

I

SD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91028

.

Document Number: 91028 www.vishay.com
S11-1046-Rev. D, 30-May-11 7

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000