Datasheet IRF530, SiHF530 DataSheet (Vishay)

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

IRF530, SiHF530

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 100

R

()V

DS(on)

Q

(Max.) (nC) 26

g

Q

(nC) 5.5

gs

Q

(nC) 11

gd

Configuration Single

= 10 V 0.16

GS

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF530PbF
SiHF530-E3
IRF530
SiHF530

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 10

C

DS

± 20

GS

I

D

IDM 56

Linear Derating Factor 0.59 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 528 μH, Rg = 25 , IAS = 14 A (see fig. 12).

DD

c. I

 14 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91019 www.vishay.com
S11-0510-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

100

14

69 mJ

14 A

8.8 mJ

88 W

- 55 to + 175

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

AT

°C

IRF530, SiHF530

D

S

G

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.7

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

- 250 -

oss

-60-

rss

g

--5.5

gs

--11

gd

d(on)

r

-23-

d(off)

-24-

f

D

Between lead,
6 mm (0.25") from
package and center of

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

showing the
integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = 250 μA 100 - -

VDS = VGS, ID = 250 μA 2.0 -

= ± 20 V - -

GS

VDS = 100 V, VGS = 0 V - -

= 80 V, VGS = 0 V, TJ = 150 °C - -

V

DS

= 10 V ID = 8.4 A

GS

VDS = 50 V, ID = 8.4 A

VGS = 0 V,

= 25 V,

V

DS

b

b

--

5.1 - -

- 670 -

4.0 V

± 100 nA

25

250

0.16 

f = 1.0 MHz, see fig. 5

--26

= 14 A, VDS = 80 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-10-

= 50 V, ID = 14 A

V

DD

R

= 12 , RD = 3.6, see fig. 10

g

b

-34-

-4.5-

-7.5-

MOSFET symbol

--14

--56

TJ = 25 °C, IS = 14 A, VGS = 0 V

b

TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs

--

-

b

-

2.5 V

150 280 ns

0.85 1.7 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

μA

S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91019
2 S11-0510-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

4.5 V

20 µs Pulse Width
T

C

= 175 °C

91019_02

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

10

1

10

0

10

-1

10

0

10

1

20 µs Pulse Width
V

DS

= 50 V

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

175 °C

91019_03

10

1

10

0

IRF530, SiHF530

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

V

To p

1

10

Bottom

, Drain Current (A)

D

I

0

10

-1

10

91019_01

Fig. 1 - Typical Output Characteristics, TC = 25 °C

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

= 25 °C

T

C

0

10

1

10

VDS, Drain-to-Source Voltage (V)

4.5 V

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

3.5
I

= 14 A

D

= 10 V

V

GS

3.0

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60- 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

,

J

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

91019_04

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91019 www.vishay.com
S11-0510-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

180

IRF530, SiHF530

1400

1200

1000

800

0

400

600

10

0

10

1

Capacitance (pF)

V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91019_05

200

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

1

175 °C

10

25 °C

0

, Reverse Drain Current (A)

10

SD

I

0.4

91019_07

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

V

= 0 V

GS

1.61.20.8

2.0

20

ID = 14 A

V

= 80 V

DS

DS

= 50 V

16

V

V

12

DS

= 20 V

8

4

, Gate-to-Source Voltage (V)

GS

V

91019_06

0

0

10

5

QG, Total Gate Charge (nC)

For test circuit
see figure 13

2015

25

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

10

5

2

2

10

5

2

10

5

2

, Drain Current (A)

D

1

I

5

2

0.1

0.1

91019_08

Fig. 8 - Maximum Safe Operating Area

Operation in this area limited

by R

DS(on)

TC = 25 °C

= 175 °C

T

J

Single Pulse

25

25

1

10

25

VDS, Drain-to-Source Voltage (V)

10

10 µs

100 µs

1 ms

10 ms

2

25

3

10

www.vishay.com Document Number: 91019
4 S11-0510-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

I

D

, Drain Current (A)

TC, Case Temperature (°C)

0

6

8

10

12

14

25 1501251007550

91019_09

4

2

175

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

Single Pulse
(Thermal Response)

0 - 0.5

0.2

0.1

0.05

0.02

0.01

91019_11

IRF530, SiHF530

Fig. 9 - Maximum Drain Current vs. Case Temperature

V

DS

V

GS

R

G

Vishay Siliconix

R

D

D.U.T.

+

V

-

DD

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.vishay.com/doc?91000

Document Number: 91019 www.vishay.com
S11-0510-Rev. B, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

IRF530, SiHF530

R

G

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

10 V

Var y tp to obtain
required I

AS

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

200

160

120

V

DS

t

p

V

DS

I

AS

I

To p

Bottom

80

D

5.7 A

9.9 A
14 A

V

DD

, Single Pulse Energy (mJ)

40

AS

E

91019_12c

VDD = 25 V

0

25 150

50

125

10075

Starting TJ, Junction Temperature (°C)

175

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

10 V

V

Q

GS

G

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

www.vishay.com Document Number: 91019
6 S11-0510-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

IRF530, SiHF530

D.U.T.

+

-

R

g

Peak Diode Recovery dV/dt Test Circuit

+

-

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

g

+

Vishay Siliconix

+

V

DD

-

Reverse
recovery
current

Re-applied
voltage

Driver gate drive

P.W.

D.U.T. l

waveform

SD

D.U.T. V

Inductor current

Note

a. V

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Period

Body diode forward

current

dI/dt

Diode recovery

dV/dt

Fig. 14 - For N-Channel

D =

Period

P.W.

V

GS

V

DD

I

SD

= 10 Va

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91019

.

Document Number: 91019 www.vishay.com
S11-0510-Rev. B, 21-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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

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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.

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Revision: 13-Jun-16

1

Document Number: 91000