Datasheet SiE830DF Datasheet (VISHAY)

New Product

N-Channel 30-V (D-S) MOSFET

SiE830DF

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

0.0042 at V

30

0.0048 at V

Package Drawing

http://www.vishay.com/doc?73398

D

Top View Bottom View

Top surface is connected to pins 1, 5, 6, and 10

Ordering Information: SiE830DF-T1-E3 (Lead (Pb)-free)

r

DS(on)

(Ω)

GS

GS

= 10 V

= 4.5 V

6 7 8 9 10

D S S G D

D S S G D
5 4 3 2 1

Silicon

Limit

120

112

PolarPAK

a

(A)

I

D

Package

Limit

67 8 9

50

50

Qg (Typ)

33 nC

10

FEATURES

• Extremely Low Q
Low Switching Losses

• Ultra Low Thermal Resistance Using
Top-Exposed PolarPAK
Double-Sided Cooling

• Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size

• Low Q

• 100 % R

gd/Qgs

and UIS Tested

g

WFET® Technology for

gd

®

Package for

Ratio Helps Prevent Shoot-Through

RoHS

COMPLIANT

APPLICATIONS

•VRM

• Point-of-Load

• Synchronous Rectification

D

D D S G

G

1 4 3 2 5

S

N-Channel MOSFET

For Related Documents

http://www.vishay.com/ppg?74422

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

= 25 °C

T

C

= 70 °C

T

C

V

DS

V

GS

50

I

D

TA = 25 °C
TA = 70 °C

Pulsed Drain Current I

T

= 25 °C

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current
Avalanche Energy E

Maximum Power Dissipation

C

TA = 25 °C

T

= 25 °C

C

T

= 25 °C

C

T

= 70 °C 66

C

= 25 °C

T

A

DM

I

S

I

AS

AS

P

D

TA = 70 °C

T

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)

d, e

, T

J

stg

Notes:
a. Package limited is 50 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 74422
S-70536-Rev. C, 26-Mar-07

30

± 12

120 (Silicon Limit)

a

(Package Limit)

a

50

b, c

27

b, c

21.6
80

a

50

b, c

4.3
30 A

45

104

b, c

5.2

b, c

3.3

- 50 to 150
260

V

A

mJ

W

°C

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1

New Product

SiE830DF

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain Top)
Maximum Junction-to-Case (Source)

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V
V

Temperature Coefficient ΔV

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage
Gate-Source Leakage

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge Q

Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.

b

a, b

a

a, c

a

a

a

a

t ≤ 10 sec R

Steady State

DS

DS /TJ

GS(th) /TJ

V

GS(th)

I

GSS

R

R

thJC

V

GS

VDS = V
V

DS

V

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

V

= 30 V, V

DS

V

V

V

= 15 V, V

V

DS

V

= 15 V, V

DS

V

= 15 V, V

DS

V

DD

≅ 10 A, V

I

D

V

DD

I

≅ 10 A, V

D

IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C

thJA

(Drain) 1 1.2

thJC

(Source)

= 0 V, ID = 250 µA

ID = 250 µA

, ID = 250 µA

GS

= 0 V, V

= 30 V, V

DS

≥ 5 V, V

DS

= 10 V, ID = 16 A

GS

= 4.5 V, ID = 15 A

GS

= 15 V, ID = 16 A

DS

= ± 12 V

GS

= 0 V

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

20 24

2.8 3.4

30 V

30

- 4.8

0.6 1.4 2 V
± 100 nA

1

10

25 A

0.0035 0.0042

0.0039 0.0048
95 S

5500

= 0 V, f = 1 MHz

GS

650
220

= 10 V, ID = 20 A

GS

75 115
33 50

= 4.5 V, ID = 20 A

GS

11

5.1

f = 1 MHz 1.0 1.5 Ω

35 55

= 15 V, RL = 1.5 Ω

= 4.5 V, Rg = 1 Ω

GEN

105 160

70 105
95 145
15 25

= 15 V, RL = 1.5 Ω

= 10 V, Rg = 1 Ω

GEN

40 60
45 70
10 15

TC = 25 °C

50
80

IS = 10 A

0.8 1.2 V
40 60 ns
40 60 nC
22
18

°C/W

mV/°C

µA

Ω

pF

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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2

Document Number: 74422

S-70536-Rev. C, 26-Mar-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiE830DF

Vishay Siliconix

80

VGS = 10 thru 3 V

60

40

Drain Current (A) -I

D

20

0

0.0 0.5 1.0 1.5 2.0

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.0044

0.0042

)
( ecnatsiseR-nO

-

)no(SD

r

0.0040

0.0038

0.0036

0.0034

0.0032

0.0030
0204060

= 4.5 V

V

GS

V

= 10 V

GS

I

- Drain Current (A)

D

On-Resistance vs. Drain Current

20

16

)A( tnerruC niarD -I

12

8

D

4

= 2 V

V

GS

0

1.0 1.4 1.8 2.2 2.6 3.0

TC = 125 °C

TC = 25 °C

V

GS

TC = - 55 °C

- Gate-to-Source Voltage (V)

Transfer Characteristics

7200

C

6000

) F p ( e c n a t i c a

4800

3600

p
a C -

2400

C

1200

80

iss

C

oss

C

rss

0

0 5 10 15 20 25 30

V

- Drain-to-Source Voltage (V)

DS

Capacitance

10

)V( e

g
atl

o
V ecruoS-ot-etaG

-

SG

V

ID = 20 A

8

6

4

2

0

020406080

Gate Charge

Document Number: 74422
S-70536-Rev. C, 26-Mar-07

VDS = 15 V

VDS = 32 V

Qg - Total Gate Charge (nC)

1.8

I D = 16 A

1.6

e c n a t s i

1.4

)dezilamroN(

s
e R

-

1.2

n O -

)
n o (

1.0

S
D

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

V

= 4.5 V, 10 V

GS

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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3

New Product

SiE830DF

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

)A( tnerruC ecruoS -I

TJ = 150 °C

10

S

1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

- Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

1.8

1.6

1.4

)
V(

)ht(

1.2

S

G

V

1.0

ID = 250 µA

TJ = 25 °C

0.010
)
( ecnatsiseR-nO ecruoS-ot-niarD -

0.009

0.008

0.007

0.006

0.005

0.004

)no(SD

0.003
r

0.002

02468 10

- Gate-to-Source Voltage (V)

V

GS

TA = 125 °C

TA = 25 °C

ID = 16 A

On-Resistance vs. Gate-to-Source Voltage

50

40

)W

30

(
rewo

P

20

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

- Temperature (°C)

T

J

Threshold Voltage

100

*Limited

by r

DS(on)

10
)A
(

t
nerr

u

C

1

n

iar

D

-

D

I

0.1

0.01

0.01

*V

GS

Safe Operating Area, Junction-to-Ambient

10

0

Single Pulse Power, Junction-to-Ambient

TA = 25 °C

Single Pulse

BVDSS

Limited

0.1110

V

- Drain-to-Source Voltage (V)

DS

minimum VGS at which r

DS(on)

isspecified

10 100010.10.01 100

Time (sec)

1 ms

10 ms

100 ms

1 s

10 s

DC

100

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Document Number: 74422

S-70536-Rev. C, 26-Mar-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiE830DF

Vishay Siliconix

140

120

)A( tnerruC niarD -

100

80

60

D

I

40

20

0

0 25 50 75 100 125 150

Package Limited

TC - Case Temperature (°C)

Current Derating*

* The power dissipation PD is based on T
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-

J(max)

120

100

)W( noitapissiD rewoP

80

60

40

20

0

25 50 75 100 125 150

TC - Case Temperature (°C)

Power Derating, Junction-to-Case

limit.

Document Number: 74422
S-70536-Rev. C, 26-Mar-07

www.vishay.com

5

New Product

SiE830DF

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

t n e i s n a r T e v i t c e f f E d e z i l a m r o N

1

Duty Cycle = 0.5

e c n a d e p m I l a m r e h T

0.1

0.01
10

0.2

0.1

0.05

0.02

-4

Single Pulse

-3

10

10

-2

-1

1 10 600 10

Notes:

P

DM

t

1

t

JM

- T

= PDMZ

A

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

t
t

thJA

100

1

2

= 55 °C/W

(t)

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

tneisnarT evitceffE de

1

Duty Cycle = 0.5

ecnadepmI lamrehT

0.2

0.1

0.1

z

ilamro

0.05

N

0.02

Single Pulse

0.01

-4

10

-3

10

-2

10

-1

110

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)

2

tn
e

isn

a

rT
evitcef

f
E d

ezi
lamro

1

Duty Cycle = 0.5

ecnade

0.1

0.2

0.1

0.05

p
mI lamre

h
T

N

0.02

0.01

-4

10

Single Pulse

-3

10

-2

10

-1

110

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Source

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech­nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74422.

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Document Number: 74422

S-70536-Rev. C, 26-Mar-07

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1