Datasheet SiE808DF Datasheet (VISHAY)

SiE808DF

PRODUCT SUMMARY

VDS (V)

0.0016 at V

20

0.0025 at V

Package Drawing

r

DS(on)

D

e

(Ω)

= 10 V 220

GS

= 4.5 V 117

GS

678910
DSSGD

New Product

N-Channel 20-V (D-S) MOSFET

FEATURES

ID (A)

Silicon

Packag e

Limit

PolarPAK

67 89

a

Limit

60

60

Qg (Typ)

46 nC

10

DDSG

• TrenchFET® Gen II Power MOSFET

• Ultra Low Thermal Resistance Using
Top-Exposed PolarPAK
Double-Sided Cooling

• Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size

• Low Q

gd/Qgs

• 100 % R

APPLICATIONS

•VRM

• DC/DC Conversion: Low-Side

• Synchronous Rectification

Vishay Siliconix

®

Package for

Ratio Helps Prevent Shoot-Through

and UIS Tested

g

D

RoHS

COMPLIANT

DSSGD
54321

Top View Bottom View

Top surface is connected to pins 1, 5, 6, and 10

Ordering Information: SiE808DF-T1-E3 (Lead (Pb)-free)

14325

For Related Documents

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

C

= 70 °C

Continuous Drain Current (T

= 150 °C)

J

T

C

DS

GS

I

D

TA = 25 °C
TA = 70 °C

Pulsed Drain Current I

= 25 °C

T

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current
Avalanche Energy E

Maximum Power Dissipation

C

TA = 25 °C

L = 0.1 mH

= 25 °C

T

C

T

= 70 °C 80

C

= 25 °C

T

A

DM

I

S

I

AS

AS

P

D

TA = 70 °C

T

Operating Junction and Storage Temperature Range

d, e

Soldering Recommendations (Peak Temperature)

Notes:
a. Package limited is 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

, T

J

stg

Document Number: 73739
S-60621-Rev. A, 24-Apr-06

Limit

20

± 20

220 (Silicon Limit)

a

60

(Package Limit)

a

60

b, c

45

b, c

36

100

a

60

b, c

4.3
35

61 mJ

125

b, c

5.2

b, c

3.3

- 50 to 150
260

Unit

V

A

W

°C

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1

SiE808DF

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol

Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain Top)
Maximum Junction-to-Case (Source)

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).

a, b

a, c

t ≤ 10 sec R

Steady State

R

thJA

(Drain) 0.8 1

R

thJC

(Source) 2.2 2.7

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔV

V

DS

Temperature Coefficient ΔV

V

GS(th)

Gate-Source Threshold Voltage V
Gate-Source Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

DS

DS /TJ

GS(th) /TJ

GS(th)

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

V

DS

V

V

DS

V

DS

I

D

I

D

IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C

GS

VDS = V
V

DS

V

DS

= 20 V, V

DS

V

GS

V

GS

V

DS

= 10 V, V

DS

= 10 V, V

= 10 V, V

V

DD

≅ 10 A, V

V

DD

≅ 10 A, V

= 0 V, V

= 0 V, ID = 250 µA

ID = 250 µA

, ID = 250 µA

GS

= ± 20 V

GS

= 20 V, V

≥ 5 V, V

GS

= 0 V, TJ = 55 °C

GS

GS

= 10 V, ID = 25 A
= 4.5 V, ID = 25 A

= 10 V, ID = 25 A

= 0 V, f = 1 MHz

GS

= 10 V, ID = 25 A

GS

= 4.5 V, ID = 20 A

GS

f = 1 MHz 0.9 1.35 Ω

= 10 V, RL = 1 Ω

= 4.5 V, Rg = 1 Ω

GEN

= 10 V, RL = 1 Ω

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 10 A

Typical Maximum

20 24

20 V

1.5 2.3 3 V

= 0 V

= 10 V

25 A

Unit

°C/W

26.5

- 7.3

mV/°C

± 100 nA

1

10

0.0013 0.0016

0.0021 0.0025

µA

Ω

95 S

8800
1600

pF
600
102 155

46 70
26

nC

8

180 270
215 325

50 75
15 25
25 40
55 85

ns

55 85
10 15

60

100

A

0.8 1.2 V
56 85ns
60 90 nC
26
30

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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2

Document Number: 73739

S-60621-Rev. A, 24-Apr-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

SiE808DF

Vishay Siliconix

100

80

)A( tnerruC niarD –I

60

40

D

20

0

0.00 0.05 0.10 0.15 0.20 0.25 0.30

V

– Drain-to-Source Voltage (V)

DS

VGS = 10 thru 5 V

Output Characteristics

0.0030

)

0.0026

(Ω ecnatsis

e
R-nO

–

)no(SD

r

0.0022

0.0018

0.0014

VGS = 4.5 V

VGS = 10 V

VGS = 4 V

VGS = 3 V

20

16

)A( tnerruC niarD –I

12

8

D

4

0

1.5 2.0 2.5 3.0 3.5 4.0

TC = 125 °C

TC = 25 °C

– Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

)Fp( ecnati

c
a
pa

C
–

C

10000

8000

6000

4000

2000

C

oss

C

rss

C

iss

TC = - 55 °C

0.0010
0 20406080100

I

– Drain Current (A)

D

On-Resistance vs. Drain Current and Gate Voltage

10

)V( e

g
atl

o
V ecruoS-ot-etaG

–

SG

V

ID = 20 A

8

VDS = 10 V

6

VDS = 16 V

4

2

0

0 20406080100120

Qg – Total Gate Charge (nC)

Gate Charge

Document Number: 73739
S-60621-Rev. A, 24-Apr-06

0

05101520

VDS – Drain-to-Source Voltage (V)

Capacitance

1.6

VGS = 4.5 V, 10 V

= 25 A

I

1.4

ecnatsi

)dezilamroN(

1.2

s
eR

­nO –

1.0

)
no(

S
D

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

– Junction Temperature (°C)

T

J

D

On-Resistance vs. Junction Temperature

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3

SiE808DF

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless noted

100

)A( tnerruC ecruoS –I

TJ = 150 °C

10

S

1

0.00 0.2 0.4 0.6 0.8

VSD – Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

2.8

2.6

2.4

)

2.2

V(

)ht(

2.0

S
G

V

1.8

ID = 250 µA

TJ = 25 °C

1.0

0.0050

(Ω ecnatsiseR-nO ecruoS-ot-niarD –)

0.0045

0.0040

0.0035

0.0030

0.0025

0.0020

)no(SD

0.0015

r

0.0010
246810

– Gate-to-Source Voltage (V)

V

GS

ID = 25 A

125 °C

25 °C

On-Resistance vs. Gate-to-Source Voltage

50

40

)W

30
(
rewoP

20

1.6

1.4

1.2

- 50 - 25 0 25 50 75 100 125 150

– Temperature (°C)

T

J

Threshold Voltage

100

*Limited

by r

DS(on)

10

)
A( t

ne
rr
uC

1

ni
ar

D
–

D

I

0.1

0.01

0.01

V

*V

GS

Safe Operating Area, Junction-to-Ambient

Single Pulse Power, Junction-to-Ambient

TA = 25 °C

Single Pulse

BVDSS
Limited

0.1 1 10

– Drain-to-Source Voltage (V)

DS

minimum VGS at which r

DS(on)

10

0

10 100010.10.01 100

Time (sec)

1 ms

10 ms

100 ms

1 s

10 s

DC

100

is specified

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4

Document Number: 73739

S-60621-Rev. A, 24-Apr-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

300

SiE808DF

Vishay Siliconix

140

250

)A( tnerruC niarD –

200

150

100

D

I

50

Package Limited

0

0 25 50 75 100 125 150

TC – Case Temperature (°C)

Current Derating*

* The power dissipation PD is based on T
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-

J(max)

120

)W( noitapissiD rewoP

100

80

60

40

20

0

25 50 75 100 125 150

– Case Temperature (°C)

T

C

Power Derating, Junctio-to-Case

limit.

Document Number: 73739
S-60621-Rev. A, 24-Apr-06

www.vishay.com

5

SiE808DF

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless noted

2

tneisnarT evitceffE dezilamroN

1

Duty Cycle = 0.5

ecnadepmI lamrehT

0.2

Notes:

P

DM

t

1

t

– TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

thJA

100

t

1

t

2

= 55 °C/W

(t)

0.1

0.01

0.1

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10

-1

110 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

tneisnarT evitceffE

1

Duty Cycle = 0.5

ecnadepmI lamreh

0.2

0.1

d
ezi

lamr

T

0.1

0.05

oN

0.02

Single Pulse

0.01

-4

10

-3

10

--

10

–1

110

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)

2

t
n
eis

n
arT ev

i

tc
e

ffE

d
ezila

mr
oN

1

Duty Cycle = 0.5

ecn

0.1

0.01

-4

10

0.2

0.1

0.05

Single Pulse

0.02

-3

10

-2

10

-1

110

a
depmI

lamrehT

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Source

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech­nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73739.

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Document Number: 73739

S-60621-Rev. A, 24-Apr-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1