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SID9971
Elektronische Bauelemente
RoHS Compliant Product
Description
The SID9971 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-251 is universally preferred for all
surface mount applications and
suited for low voltage applications
commercial-industrial
such as DC/DC converters.
Features
* Low On-Resistance
* Simple Drive Requirement
25A, 60V,RDS(ON)36m
Ω
N-Channel Enhancement Mode Power Mos.FET
TO-251
2.3±
0.05
0.15
0.5±
0.1
0.3
0.1
6.6±
0.2
5.3±
0.2
5.6±
0.2
7.0±
0.2
0.6±
0.1
2.3REF.
G D S
Dimensions in millimeters
D
7.0±
0.5±
0.2
1.2±
0.75±
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
1
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
G
Marking Code: 9971
XXXX(Date Code)
S
VDS
VGS
o
ID@TC=25
ID@TC=100
C
o
C
IDM
o
PD@TC=25
C
Tj, Tstg
Symbol Ratings Unit
Rthj-c
Rthj-a
60
± 20
25
16
80
39
0.31
-55~+150
3 2.
110
W / C
o
o
V
V
A
A
A
W
o
o
C
/W C
/W C
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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4
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SID9971
Elektronische Bauelemente
25A, 60V,RDS(ON)36m
N-Channel Enhancement Mode Power Mos.FET
o
C
o
C
)
o
BV
DSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RD S( ON )
Qg
Qgs
Qgd
Td
(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
Min. Unit
60
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.05
_
_
_
_
_
_
18
6
11
9
24
26
7
1700
160
110
_
_
3.0
±
100
50
30
_
_
_
_
2700
_
1
25
36
_
_
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current(Tj=150
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
2
V
o
V/
C
V
nA
uA
uA
Ω
m
nC
nS
pF
Ω
Test Condition
VGS=0V, ID=250uA
Reference to 25 C , I
VDS=VGS, ID=250uA
±
VGS= 20V
VDS=60V,VGS=0
VDS=48V,VGS=0
VGS=10V, ID
VGS=4.5V, I
ID=18A
VDS=48V
VGS= 4.5V
V
DD=30V
ID=18A
VGS=10V
R
G=3.3
RD=1.67
VGS=0V
VDS=25V
f=1.0MHz
o
=18A
D=12A
Ω
Ω
D=1mA
Forward Transconductance
Gfs
17
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Change
Notes:
1.
Pulse width limited by safe operating area.
Pulse width 300us, dutycycle 2%.
2.
h
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
≦
≦
V
SD
Trr
Q
rr
Min. Unit
_
_
Typ.
__
37
38
__
1.2
_
_
Any changing of specification will not be informed individual
S
V
nS
nC
VDS=10V, ID=18A
Test Condition
IS=25 A, VGS=0V.
IS=18A, VGS=0V.
dl/dt=100A/us
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SID9971
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
25A, 60V,RDS(ON)36m
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
h
ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s
Junction Temperature
.
Page 3 of 4
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SID9971
Elektronische Bauelemente
25A, 60V,RDS(ON)36m
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
h
ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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