Page 1
A
C
D
H
G E
F
K
B
J P
M
Millimeter
Millimeter
Min. Max. Min. Max.
A 6.40 6.80 G 5.40 5.80
B 5.20 5.50 H 0.90 1.50
C 2.20 2.40 J 2.30
D 0.45 0.55 K 0.60 0.90
E 6.80 7.20 M 0.50 0.70
F 7.20 7.80 P 0.45 0.60
1
3
2
9575
Elektronische Bauelemente
DESCRIPTION
The SID9575 provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
FEATURES
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
APPLICATION
The through-hole version (TO-251) is available for
low-profile applications and suited for low voltage
applications such as DC / DC converters.
MARKING:
Date code
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
Drain
Gate
SID9575
-15A , -60V , R
REF.
90 mΩΩΩΩ
DS(ON)
TO-251
REF.
Source
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±25 V
Continuous Drain Current
ID
VGS=10V, TC=100°C -9.5 A
Pulsed Drain Current1 IDM -45 A
Total Power Dissipation @ TC = 25°C PD 36 W
VGS=10V, TC=25°C
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
R
3.5 °C / W
θJC
R
110 °C / W
θJA
Linear Derating Factor 0.29 W / °C
Operating Junction & Storage temperature TJ, T
-55~150 °C
STG
-15 A
Unit
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-May-2011 Rev. B Page 1 of 4
Page 2
Breakdown Voltage Temperature
Source Leakage
SID9575
-15A , -60V , R
Elektronische Bauelemente
P-Channel Enhancement Mode Power MOSFET
DS(ON)
90 mΩΩΩΩ
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage BV
Coefficient
∆BV
Gate Threshold Voltage V
Forward Trans-conductance gfs - 14 - S V
Gate-Source Leakage Current I
Drain-
Current
Static Drain-Source On-Resistance
TJ=25℃
TJ=150℃
2
Total Gate Charge2 Qg - 17 27
Gate-Source Charge Qgs - 5 Gate-Drain (“Miller”) Charge Qgd - 6 Turn-on Delay Time2 T
Rise Time Tr - 19 Turn-off Delay Time T
Fall Time Tf - 53 -
-60 - - V VGS=0, ID = -250µA
DSS
/ ∆T
DSS
-1 - -3 V VDS=VGS, ID= -250 µA
GS(th)
- - ±100
GSS
J
- -0.06
- V / °C Reference to 25°C, ID = -1mA
- - -1
I
DSS
- - -25 VDS= -48 V, VGS=0
- - 90
R
DS(ON)
- 10 -
d(on)
- 46 -
d(off)
- - 120 VGS= -4.5 V, ID= -9 A
Test Conditions
= -10V, ID = -9A
DS
nA VGS= ±25V
VDS= -60 V, VGS=0
uA
VGS= -10 V, ID= -12A
mΩ
ID= -9 A
nC
VDS= -48 V
VGS= -4.5 V
VDS= -30 V
ID= -9 A
nS
VGS= -10 V
RG=3.3 Ω
RD=3.3 Ω
Input Capacitance C
Output Capacitance C
- 1660 2660
iss
- 160 -
oss
pF
VGS=0
VDS= -25V
f =1 MHz
Reverse Transfer Capacitance C
- 100 -
rss
Source-Drain Diode
Forward On Voltage2 VSD - - -1.2 V IS= -9A, VGS=0
Reverse Recovery Time2 Trr - 56 - nS
Reverse Recovery Charge Qrr - 159 - nC
Notes:
1. Pulse width limited by safe operating area.
2. Pulse width≦300us, duty cycle≦2%
.
IS= -9 A, VGS=0
dl/dt=100A / µs
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-May-2011 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SID9575
-15A , -60V , R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
90 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-May-2011 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SID9575
-15A , -60V , R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
90 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-May-2011 Rev. B Page 4 of 4
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