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SID9435
Elektronische Bauelemente
RoHS Compliant Product
Description
The SID9435 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient
and cost-effectiveness device.
The TO-251 is universally used for commercial-industrial
applications.
Features
* Low Gate Charge
* Simple Drive Requirement
* Fast Switching
-20A, -30V,RDS(ON)50m
Ω
P-Channel Enhancement Mode Power Mos.FET
TO-251
2.3±
0.05
0.15
0.5±
0.1
0.3
0.1
5.6±
7.0±
0.6±
6.6±
0.2
5.3±
0.2
0.2
0.2
0.1
2.3REF.
G D S
Dimensions in millimeters
7.0±
0.5±
0.2
1.2±
0.75±
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
1
VDS
VGS
ID@TC=
ID@TC=
IDM
PD@TC=
Tj, Tstg
D
Marking Code: 9435
G
XXXX(Date Code)
S
V
V
W / C
A
A
A
W
o
o
C
25
100
25
0
-3
± 20
o
C
o
C
-20
-13
-72
o
C
31
0.25
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol Ratings Unit
Max.
Max.
Any changing of specification will not be informed individual
Rthj-c
Rthj-a
4.0
110
o
o
/W C
/W C
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SID9435
Elektronische Bauelemente
-20A, -30V,RDS(ON)50m
P-Channel Enhancement Mode Power Mos.FET
o
C
o
)
C
o
BV
DSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RD S( ON )
Qg
Qgs
Qgd
Td
(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
Min. Unit
-
30
_
-
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
-
_
0.1
_
_
_
_
_
-3.0
±
100
-25
_
_
-1
50
_
10
3
5
9.6
18
19
14
463
187
140
90
16
_
_
_
_
_
_
740
_
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current(Tj=150
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
V
o
V/
C
V
nA
uA
uA
Ω
m
nC
nS
pF
Ω
Test Condition
VGS=0V, ID=-250uA
Ω
Ω
o
=-10A
D=-5
Reference to 25 C , I
VDS=VGS, ID=-250uA
±
VGS= 20V
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VGS=-10V, ID
VGS=-4.5V, I
ID=-10A
VDS=-24V
VGS=-4.5V
V
DD=-15V
ID=-10A
VGS=-10V
R
G=3.3
RD=1.5
VGS=0V
VDS=25V
f=1.0MHz
D=-1mA
A
Forward Transconductance
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Change
Notes:
1.
Pulse width limited by Max. junction temperature.
Pulse width 300us, dutycycle 2%.
2.
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Gfs
9.6
Min.
2
≦
≦
V
SD
Trr
Q
rr
_
_
Typ.
__
34
30
__
S
Unit
-1.2
_
_
Any changing of specification will not be informed individual
V
nS
nC
VDS=-10V, ID=-6 A
Test Condition
-10A, VGS=0V.
IS=
-10A, VGS=0V.
IS=
dl/dt=100A/us
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SID9435
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
-20A, -30V,RDS(ON)50m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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Page 4
SID9435
Elektronische Bauelemente
-20A, -30V,RDS(ON)50m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
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