Datasheet sid40n03 Datasheet

SID40N03

Elektronische Bauelemente

RoHS Compliant Product

Description

The SID40N03 provide the designer with the best combination

of fast switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The TO-251 is universally preferred for all

surface mount applications and

suited for low voltage applications

commercial-industrial

such as DC/DC converters.

Features

* Repetitive Avalanche Rated

* Dynamic dv/dt Rating

* Simple Drive Requirement

* Fast Switching

36A, 30V,RDS(ON)21m

Ω

N-Channel Enhancement Mode Power Mos.FET

TO-251

2.3±

0.05

0.15

0.5±

0.1

0.3

0.1

5.6±

7.0±

0.6±

6.6±

0.2

5.3±

0.2

0.2

0.2

0.1

2.3REF.

G D S

Dimensions in millimeters

7.0±

0.5±

0.2

1.2±

0.75±

Absolute Maximum Ratings

Parameter Symbol Ratings Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current,VGS@10V

Continuous Drain Current,VGS@10V

Pulsed Drain Current

Total Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

1

G

VDS

VGS

ID@TC=25

ID@TC=100

IDM

PD@TC=25

Tj, Tstg

D

Marking Code: 40N03
XXXX(Date Code)

S

30

± 20

o

C

o

C

36

25

150

o

C

50

0.

4

-55~+150

V

V

W / C

A

A

A

W

o

o

C

Thermal Data

Parameter

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Max.

Max.

Symbol Ratings Unit

Rthj-c

Rthj-a

2.5

110

o

/W C

o

/W C

Page 1 of 5

SID40N03

Elektronische Bauelemente

36A, 30V,RDS(ON)21m

N-Channel Enhancement Mode Power Mos.FET

o

C

o

C

)

o

BV

DSS

BVDS/ Tj

VGS(th)

IGSS

IDSS

RD S( ON )

Qg

Qgs

Qgd

Td

(ON)

Tr

(Off)

Td

T

f

Ciss

Coss

Crss

Min. Unit

30

_

1.0

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

Typ.

_

0.037

_

_

_

_

18

24

17

3

10

7.2

60

22.5

10

800

380

133

± 

100

250

21

_

_

3.0

25

30

_

_

_

_

_

_

_

_

_

_

Electrical Characteristics( Tj=25 C Unless otherwise specified)

Parameter Symbol Max.

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Gate Threshold Voltage

Gate-Source Leakage Current

Drain-Source Leakage Current (Tj=25 )

Drain-Source Leakage Current(Tj=150

Static Drain-Source On-Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

2

2

V

o

V/

C

V

nA

uA

uA

Ω

m

nC

nS

pF

Ω

Test Condition

VGS=0V, ID=250uA

Reference to 25 C , I

VDS=VGS, ID=250uA

±

VGS= 20V

VDS=30V,VGS=0

VDS=24V,VGS=0

VGS=10V, ID

VGS=4.5V, I

ID=18A

VDS=24V

VGS= 5V

V

DD=15V

ID=18A

VGS=10V

R

G=3.3

RD=0.83

VGS=0V
VDS=25V

f=1.0MHz

o

=18A

D=14 A

Ω

Ω

D=1mA

Forward Transconductance

Gfs

Source-Drain Diode

Parameter Symbol Max.

Forward On Voltage

2

Continuous Source Current(Body Diode)

Pulsed Source Current(Body Diode)

Notes:

1.

Pulse width limited by safe operating area.
Pulse width 300us, dutycycle 2%.

2.

http://www.SeCoSGmbH.com/

01-Jun-2002 Rev. A

≦

1

≦

V

SD

IS

I

SM

26

Min. Unit

_

_

Typ.

__

_

_

__

1.3

36

150

Any changing of specification will not be informed individual

S

VDS=10V, ID=18A

Test Condition

V

A

A

36

IS= A, VGS=0V.Tj=25C

VD=VG=0V,VS=1.3 V

o

Page 2 of 5

SID40N03

Elektronische Bauelemente

Characteristics Curve

Fig 1. Typical Output Characteristics

36A, 30V,RDS(ON)21m

Ω

N-Channel Enhancement Mode Power Mos.FET

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Fig 5. Maximum Drain Current

v.s. Case Temperature

Fig 6. Type Power Dissipation

Page 3 of 5

SID40N03

Elektronische Bauelemente

36A, 30V,RDS(ON)21m

Ω

N-Channel Enhancement Mode Power Mos.FET

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

Fig 9. Gate Charge Characteristics

Fig 11. Forward Characteristics of
Reverse Diode

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Fig 10. Typical Capacitance Characteristics

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

Page 4

of 5

SID40N03

Elektronische Bauelemente

36A, 30V,RDS(ON)21m

Ω

N-Channel Enhancement Mode Power Mos.FET

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

-Jun-2002 Rev. A

01

Page 5 of 5