Page 1
SID3055
Elektronische Bauelemente
Description
The TO-251 is universally preferred for all
surface mount applications and
such as DC/DC converters.
suited for low voltage applications
RoHS Compliant Product
commercial-industrial
15A, 30V,RDS(ON)80m
Ω
N-Channel Enhancement Mode Power Mos.FET
TO-251
2.3±
0.05
0.15
0.5±
0.1
0.3
0.1
5.6±
7.0±
0.6±
6.6±
0.2
5.3±
0.2
0.2
0.2
0.1
2.3REF.
G D S
Dimensions in millimeters
7.0±
0.5±
0.2
1.2±
0.75±
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
1
G
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Tj, Tstg
D
Marking Code: 3055
XXXX(Date Code)
S
o
C
o
C
o
C
-55~+150
30
± 20
15
50
28
0.22
V
V
A
9
A
A
W
o
W / C
o
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Max.
Max.
Symbol Ratings Unit
Rthj-c
Rthj-a
4.5
62
o
/W C
o
/W C
Page 1 of
6
Page 2
SID3055
15A, 30V,RDS(ON)80m
Elektronische Bauelemente
o
C
o
)
C
o
BV
DSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RD S(O N)
Qg
Qgs
Qgd
Td
(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
Min. Unit
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
e Threshold Voltage
Gat
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current(Tj=150
Static
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter Symbol Max.
Drain-Source On-Resistance
2
2
N-Channel Enhancement Mode Power Mos.FET
Typ.
30
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
0.037
_
_
_
_
14.5
21.5
5.4
1.3
3.6
3.6
19.8
13
3.2
260
144
13
±
100
250
16.5
_
_
3.0
25
25
_
_
_
_
_
_
_
_
_
_
V
o
V/
C
V
nA
uA
uA
Ω
m
nC
nS
pF
Ω
Test Condition
GS=0V, ID=250uA
V
Reference to 25 C , I
DS=VGS, ID=250uA
V
±
VGS= 20V
VDS=30V,VGS=0
DS=24V,VGS=0
V
VGS=10V, ID
GS=4.5V, I
V
ID=8 A
VDS=24V
VGS= 5V
VDD=15V
ID=8A
VGS=10V
RG=3.4
RD=1.9
VGS=0V
VDS=25V
f=1.0MHz
o
=28A
D=22 A
Ω
Ω
D=1mA
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
2
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
Notes:
1.
Pulse width limited by safe operating area.
Pulse width 300us, dutycycle 2%.
2.
http://www.SeCoSGmbH.com/
-Jun-2002 Rev. A
01
≦
1
≦
V
SD
IS
I
SM
Min. Unit
_
_
Typ.
__
_
_
Any changing of specification will not be informed individual
1.3
15
50
V
A
A
Test Condition
IS=15 A, VGS=0V.Tj=25C
VD=VG=0V,VS=1.3 V
o
Page 2 of 6
Page 3
Elektronische Bauelemente
SID3055
15A, 30V,RDS(ON)80m
N-Channel Enhancement Mode Power Mos.FET
Ω
Characteristics Curve
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 6
Page 4
SID3055
Elektronische Bauelemente
15A, 30V,RDS(ON)80m
Ω
N-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 6
Page 5
SID3055
Elektronische Bauelemente
15A, 30V,RDS(ON)80m
Ω
N-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
5 of 6
Page 6
SID3055
Elektronische Bauelemente
15A, 30V,RDS(ON)80m
Ω
N-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
6 of 6
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