Page 1
A
C
D
H
G E
F
K
B
J P
M
SID10N30-600I
7.5A, 300V, R
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
N-Channel Enhancement MOSFET
DS(ON)
600 mΩΩΩΩ
DESCRIPTION
The miniature surface mount MOSFETs utilize a high
cell density trench process to provide Low R
to ensure minimal power loss and heat dissipation.
FEATURES
Low R
provides higher efficiency and extends
DS(on)
battery life.
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters, power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
(TA=25°C unless otherwise specified)
DS(on)
and
TO-251P
REF.
Millimeter
Min. Max.
A 6.40 6.80 G 6.00 6.30
B 5.20 5.50 H 0.90 1.50
C 2.20 2.40 J 2.30
D 0.40 0.60 K 0.60 0.90
E 6.80 7.20 M 0.70 1.20
F 4.00 P 0.40 0.60
REF.
Millimeter
Min. Max.
Drain-Source Voltage VDS 300 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1 TC=25°C ID 7.5 A
Pulsed Drain Current 2 IDM 36 A
Continuous Source Current (Diode Conduction) 1 IS 5 A
Power Dissipation 1 TC=25°C PD 50 W
Operating Junction and Storage Temperature Range TJ, T
-55 ~ 175 °C
STG
Thermal Resistance Data
Maximum Junction to Ambient 1 R
Maximum Junction to Case R
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Apr-2012 Rev. A Page 1 of 2
50
θJA
θJC
3
°C / W
Page 2
SID10N30-600I
7.5A, 300V, R
Elektronische Bauelemente
N-Channel Enhancement MOSFET
DS(ON)
600 mΩΩΩΩ
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 gFS - 4.4 - S VDS=40V,,ID=1A
Diode Forward Voltage VSD - 1.1 - V IS=1A, VGS=0
1 - - V VDS=VGS, ID=250µA
GS(th)
- - ±100 nA VDS=0, VGS=20V
GSS
- - 1
DSS
2 - - A VDS=5V, VGS=10V
D(ON)
- - 25 VDS=240V, VGS=0, TJ=55°C
µA
- - 600
DS(ON)
- - 900
mΩ
Dynamic 2
Total Gate Charge Qg - 19 Gate-Source Charge Qgs - 3 -
nC
Gate-Drain Charge Qgd - 9.5 Turn-On Delay Time Td
- 25 -
(ON)
Rise Time Tr - 60 -
nS
Turn-Off Delay Time Td
- 65 -
(OFF)
Fall Time Tf - 45 -
Notes:
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
Test conditions
VDS=240V, VGS=0
VGS=10V, ID=1A
VGS=5.5V, ID=1A
ID=1A
VDS=25V
VGS=10V
VDD=100V
V
=10V
GEN
RL=25Ω
ID=9A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Apr-2012 Rev. A Page 2 of 2
Loading...